Patents by Inventor Anuja E. DeSilva
Anuja E. DeSilva has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11171002Abstract: Methods of forming fins include masking a region on a three-color hardmask fin pattern, leaving a fin of a first color exposed. The exposed fin of the first color is etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into a fin base layer using the fins of the first color and the fins of the third color.Type: GrantFiled: February 24, 2020Date of Patent: November 9, 2021Assignee: Tessera, Inc.Inventors: John C. Arnold, Anuja E. DeSilva, Nelson M. Felix, Chi-Chun Liu, Yann A. M. Mignot, Stuart A. Sieg
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Publication number: 20200266066Abstract: Methods of forming fins include masking a region on a three-color hardmask fin pattern, leaving a fin of a first color exposed. The exposed fin of the first color is etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into a fin base layer using the fins of the first color and the fins of the third color.Type: ApplicationFiled: February 24, 2020Publication date: August 20, 2020Applicant: TESSERA, INC.Inventors: John C. Arnold, Anuja E. DeSilva, Nelson M. Felix, Chi-Chun Liu, Yann A.M. Mignot, Stuart A. Sieg
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Patent number: 10580652Abstract: Methods of forming fins include masking a region on a three-color hardmask fin pattern, leaving a fin of a first color exposed. The exposed fin of the first color is etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into a fin base layer using the fins of the first color and the fins of the third color.Type: GrantFiled: August 8, 2018Date of Patent: March 3, 2020Assignee: Tessera, Inc.Inventors: John C. Arnold, Anuja E. DeSilva, Nelson M. Felix, Chi-Chun Liu, Yann A. M. Mignot, Stuart A. Sieg
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Publication number: 20180350600Abstract: Methods of forming fins include masking a region on a three-color hardmask fin pattern, leaving a fin of a first color exposed. The exposed fin of the first color is etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into a fin base layer using the fins of the first color and the fins of the third color.Type: ApplicationFiled: August 8, 2018Publication date: December 6, 2018Inventors: John C. Arnold, Anuja E. DeSilva, Nelson M. Felix, Chi-Chun Liu, Yann A.M. Mignot, Stuart A. Sieg
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Patent number: 10103022Abstract: Methods of forming fins include forming mask fins on a protection layer over a seed layer. Seed layer fins are etched out of the seed layer. Self-assembled fins are formed by directed self-assembly on the seed layer fins. A three-color hardmask fin pattern that has hardmask fins of three mutually selectively etchable compositions is formed using the self-assembled fins as a mask. A region on the three-color hardmask fin pattern is masked, leaving one or more fins of a first color exposed. All exposed fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.Type: GrantFiled: March 20, 2017Date of Patent: October 16, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John C. Arnold, Anuja E. DeSilva, Nelson M. Felix, Chi-Chun Liu, Yann A. M. Mignot, Stuart A. Sieg
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Publication number: 20180269060Abstract: Methods of forming fins include forming mask fins on a protection layer over a seed layer. Seed layer fins are etched out of the seed layer. Self-assembled fins are formed by directed self-assembly on the seed layer fins. A three-color hardmask fin pattern that has hardmask fins of three mutually selectively etchable compositions is formed using the self-assembled fins as a mask. A region on the three-color hardmask fin pattern is masked, leaving one or more fins of a first color exposed. All exposed fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.Type: ApplicationFiled: March 20, 2017Publication date: September 20, 2018Inventors: John C. Arnold, Anuja E. DeSilva, Nelson M. Felix, Chi-Chun Liu, Yann A.M. Mignot, Stuart A. Sieg
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Patent number: 9911647Abstract: A method for forming conductive lines on a wafer comprises forming a first hardmask, a planarizing layer, a second hardmask, a layer of sacrificial mandrel material on the second hardmask, and patterning a mask on the layer of sacrificial material. A first sacrificial mandrel and a second sacrificial mandrel and a gap are formed. A layer of spacer material is deposited in the gap. Portions of the first sacrificial mandrel and the second sacrificial mandrel are removed, and exposed portions of the second hardmask, the planarizing layer and the first hardmask are removed to expose portions of the insulator layer. The second hardmask, the spacers, and the planarizing layer are removed. Exposed portions of the insulator layer are removed to form a trench in the insulator layer, and the trench is filled with a conductive material.Type: GrantFiled: August 15, 2017Date of Patent: March 6, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sean D. Burns, Lawrence A. Clevenger, Anuja E. DeSilva, Nelson M. Felix, Sivananda K. Kanakasabapathy, Yann A. M. Mignot, Christopher J. Penny, Roger A. Quon, Nicole A. Saulnier
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Publication number: 20170358487Abstract: A method for forming conductive lines on a wafer comprises forming a first hardmask, a planarizing layer, a second hardmask, a layer of sacrificial mandrel material on the second hardmask, and patterning a mask on the layer of sacrificial material. A first sacrificial mandrel and a second sacrificial mandrel and a gap are formed. A layer of spacer material is deposited in the gap. Portions of the first sacrificial mandrel and the second sacrificial mandrel are removed, and exposed portions of the second hardmask, the planarizing layer and the first hardmask are removed to expose portions of the insulator layer. The second hardmask, the spacers, and the planarizing layer are removed. Exposed portions of the insulator layer are removed to form a trench in the insulator layer, and the trench is filled with a conductive material.Type: ApplicationFiled: August 15, 2017Publication date: December 14, 2017Inventors: Sean D. Burns, Lawrence A. Clevenger, Anuja E. DeSilva, Nelson M. Felix, Sivananda K. Kanakasabapathy, Yann A. M. Mignot, Christopher J. Penny, Roger A. Quon, Nicole A. Saulnier
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Patent number: 9786554Abstract: A method for forming conductive lines on a wafer comprises forming a first hardmask, a planarizing layer, a second hardmask, a layer of sacrificial mandrel material on the second hardmask, and patterning a mask on the layer of sacrificial material. A first sacrificial mandrel and a second sacrificial mandrel and a gap are formed. A layer of spacer material is deposited in the gap. Portions of the first sacrificial mandrel and the second sacrificial mandrel are removed, and exposed portions of the second hardmask, the planarizing layer and the first hardmask are removed to expose portions of the insulator layer. The second hardmask, the spacers, and the planarizing layer are removed. Exposed portions of the insulator layer are removed to form a trench in the insulator layer, and the trench is filled with a conductive material.Type: GrantFiled: June 8, 2016Date of Patent: October 10, 2017Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sean D. Burns, Lawrence A. Clevenger, Anuja E. DeSilva, Nelson M. Felix, Sivananda K. Kanakasabapathy, Yann A. M. Mignot, Christopher J. Penny, Roger A. Quon, Nicole A. Saulnier