Abstract: A device includes a layer including a first III-Nitride (III-N) material, a channel layer including a second III-N material, a release layer including nitrogen and a transition metal, where the release layer is between the first III-N material and the second III-N material. The device further includes a polarization layer including a third III-N material above the release layer, a gate structure above the polarization layer, a source structure and a drain structure on opposite sides of the gate structure where the source structure and the drain structure each include a fourth III-N material. The device further includes a source contact on the source structure and a drain contact on the drain structure.

Abstract: A device includes a layer including a first III-Nitride (III-N) material, a channel layer including a second III-N material, a release layer including nitrogen and a transition metal, where the release layer is between the first III-N material and the second III-N material. The device further includes a polarization layer including a third III-N material above the release layer, a gate structure above the polarization layer, a source structure and a drain structure on opposite sides of the gate structure where the source structure and the drain structure each include a fourth III-N material. The device further includes a source contact on the source structure and a drain contact on the drain structure.

Abstract: Micro light-emitting diode (LED) display fabrication and assembly are described. In an example, a micro-light emitting diode (LED) display panel includes a display backplane substrate having a plurality of metal bumps thereon. A plurality of LED pixel elements includes ones of LED pixel elements bonded to corresponding ones of the plurality of metal bumps of display backplane substrate. One or more of the plurality of LED pixel elements has a graphene layer thereon. The graphene layer is on a side of the one or more of the plurality of LED pixel elements opposite the side of the metal bumps.

Abstract: An apparatus is provided which comprises: a substrate; one or more active devices adjacent to the substrate; a first set of one or more layers to interconnect the one or more active devices; a second set of one or more layers; and a layer adjacent to one of the layers of the first and second sets, wherein the layer is to bond the one of the layers of the first and second sets.

Abstract: An apparatus is provided which comprises: a substrate; one or more active devices adjacent to the substrate; a first set of one or more layers to interconnect the one or more active devices; a second set of one or more layers; and a layer adjacent to one of the layers of the first and second sets, wherein the layer is to bond the one of the layers of the first and second sets.

Abstract: An apparatus is provided which comprises: a substrate; a first active device adjacent to the substrate; a first set of one or more layers to interconnect the one or more active devices; a second set of one or more layers; a second active device coupled to the second set of one or more layers; and a layer adjacent to one of the layers of the first set and the second active device, wherein the layer is to bond the one of the layers of the first set and the second active device.

Abstract: Micro light-emitting diode (LED) displays and assembly apparatuses are described. In an example, a pixel element for a micro-light emitting diode (LED) display panel includes a first color nanowire LED, a second color nanowire LED, the second color different than the first color, and a pair of third color nanowire LEDs, the third color different than the first and second colors. A continuous insulating material layer ius laterally surrounding the first color nanowire LED, the second color nanowire LED, and the pair of third color nanowire LEDs.

Abstract: Micro light-emitting diode (LED) displays and assembly apparatuses are described. In an example, a pixel element for a micro-light emitting diode (LED) display panel includes a first color nanowire LED, a second color nanowire LED, the second color different than the first color, and a pair of third color nanowire LEDs, the third color different than the first and second colors. A continuous insulating material layer ius laterally surrounding the first color nanowire LED, the second color nanowire LED, and the pair of third color nanowire LEDs.

Abstract: Embodiments may relate to a microelectronic package that includes a die coupled with a package substrate. A solder thermal interface material (STIM) may be coupled with the die such that the die is between the STIM and the package substrate. An integrated heat spreader (IHS) may be coupled with the STIM such that the STIM is between the IHS and the die, and the IHS may include a feature that is to control bleed-out of the STIM during STIM reflow based on surface tension of the STIM. Other embodiments may be described or claimed.

Abstract: Micro light-emitting diode displays and methods of fabricating micro LED displays are described. In an example, a micro light emitting diode pixel structure includes a plurality of micro light emitting diode devices in a dielectric layer. A transparent conducting oxide layer is above the dielectric layer. A color conversion device (CCD) is above the transparent conducting oxide layer and over one of the plurality of micro light emitting diode devices.

Abstract: A micro-light emitting diode (LED) display and a method of fabricating the same. The method includes aligning a display backplane and a source semiconductor wafer with one another. A plurality of backplane contact pads of a first width are fixed to the backplane and include first solder pads thereon with a second width smaller than the first width. The wafer includes thereon a plurality of micro-LEDs, and a plurality of micro-LED contact pads fixed to the micro-LEDs and having a third width smaller than the first width. The method includes: aligning such that at least some of the micro-LED contact pads register with corresponding first solder pads; releasing at least some of the micro-LEDs from the wafer onto corresponding first solder pads; and forming a plurality of second solder pads by melting the corresponding first solder pads.

Abstract: An apparatus is provided which comprises: a substrate; a first active device adjacent to the substrate; a first set of one or more layers to interconnect with the first active device; a second set of one or more layers; a second active and/or passive device coupled to the second set of one or more layers; and a layer adjacent to one of the layers of the first and second sets, wherein the layer is to bond the one of the layers of the first and second sets.

Abstract: An apparatus is provided which comprises: a first die having a first surface and a second surface, the first die comprising: a first layer formed on the first surface of the first die, and a second layer formed on the second surface of the first die; a second die coupled to the first layer; and a plurality of structures to couple the apparatus to an external component, wherein the plurality of structures is coupled to the second layer.

Abstract: Embodiments herein describe techniques for a semiconductor device including a semiconductor substrate, a first device of a first wafer, and a second device at back end of a second wafer, where the first device is bonded with the second device. A first metal electrode of the first device within a first dielectric layer is coupled to an n-type oxide TFT having a channel layer that includes an oxide semiconductor material. A second metal electrode of the second device within a second dielectric layer is coupled to p-type organic TFT having a channel layer that includes an organic material. The first dielectric layer is bonded to the second dielectric layer, and the first metal electrode is bonded to the second metal electrode. The n-type oxide TFT and the p-type organic TFT form a symmetrical pair of transistors of a CMOS circuit. Other embodiments may be described and/or claimed.

Abstract: Micro-LED structures for full color displays and methods of manufacturing the same are disclosed. An apparatus for a micro-LED display includes a first portion of a nanorod and a second portion of the nanorod. The first and second portions including gallium and nitrogen. The apparatus includes a polarization inversion layer between the first portion and the second portion. The apparatus includes a cap at an end of the nanorod. The cap including a core and an active layer. The core including gallium and nitrogen. The active layer including indium.

Abstract: Embodiments disclosed herein include micro light emitting device (LED) display panels and methods of forming such devices. In an embodiment, a display panel includes a display backplane substrate, a light emitting element on the display backplane, a transparent conductor over the light emitting element, a dielectric layer over the transparent conductor, and a color conversion device over the light emitting element. In an embodiment, the dielectric layer separates the transparent conductor from the color conversion device.

Abstract: Embodiments disclosed herein include micro-light emitting diode (LED) displays and methods of forming such micro-LED displays. In an embodiment, a micro-light emitting diode (LED) display panel includes a display backplane substrate having a dielectric layer. In an embodiment, a plurality of electrical contacts are positioned below a first surface of the dielectric layer. In an embodiment a plurality of micro-LED pixel elements, are affixed to corresponding ones of the plurality of contacts.

Abstract: Micro light-emitting diode (LED) displays and assembly apparatuses are described. In an example, a pixel element for a micro-light emitting diode (LED) display panel includes a first color nanowire LED, a second color nanowire LED, the second color different than the first color, and a pair of third color nanowire LEDs, the third color different than the first and second colors. A continuous insulating material layer ius laterally surrounding the first color nanowire LED, the second color nanowire LED, and the pair of third color nanowire LEDs.

Abstract: Micro light-emitting diode (LED) displays, and fabrication and assembly of micro LED displays, are described. In an example, a pixel element for a micro-light emitting diode (LED) display panel includes a blue color nanowire or nanopyramid LED above a first nucleation layer above a substrate, the blue color nanowire or nanopyramid LED including a first GaN core. A green color nanowire or nanopyramid LED is above a second nucleation layer above the substrate, the green color nanowire or nanopyramid LED including a second GaN core. A red color nanowire or nanopyramid LED is above a third nucleation layer above the substrate, the red color nanowire or nanopyramid LED including a GaInP core.

Abstract: An apparatus is provided which comprises: a substrate; a first active device adjacent to the substrate; a first set of one or more layers to interconnect with the first active device; a second set of one or more layers; a second active and/or passive device coupled to the second set of one or more layers; and a layer adjacent to one of the layers of the first and second sets, wherein the layer is to bond the one of the layers of the first and second sets.