Abstract: According to one embodiment, a pattern formation method includes holding a substrate on a suction chuck that an outer suction region for an outer edge portion of the substrate and an inner suction region for an inner region of the substrate. A partial shot region at an outer edge of the substrate has a first alignment mark in the inner region and a second alignment mark at the outer edge portion. While a template is being pressed against a resin film in the shot region, position alignment using the second and fourth alignment marks is performed by adjusting a suction force for the outer suction region for changing a warpage amount of the substrate while observing the second and fourth alignment marks through the template.

Abstract: An imprint method includes supplying a first photocurable resist to a first region of an object; irradiating the first resist with first light; forming a second resist over the object; bringing a template into contact with the second resist; and irradiating at least the second resist with second light through the template while the template is in contact with the second resist.

Abstract: According to one embodiment, a pattern forming method includes placing a resin material on a film to be processed; pressing a template including a plurality of patterns protruding from a reference plane against the resin material to form a first resin film having first and second patterns, separated from each other in a first direction, and a third pattern between the first and second patterns; forming a second resin film that covers the first resin film; selectively exposing and developing the second resin film to expose the first and second patterns; and processing the film to be processed via the first and second resin films to transfer the first and second patterns to the film to be processed.

Abstract: According to one embodiment, an imprint lithography template comprises a substrate transparent to ultraviolet light. A first mesa region is on the substrate. A surface of the first mesa region includes a pattern region to be pressed into a photocurable resist film. The pattern region having four sides. A second mesa region is also on the substrate. The first mesa region protrudes from a surface of the second mesa region. A blocking film is adjacent to two sides of the four sides pattern region. The two sides to which the blocking film is adjacent are connected to each other at a corner of the pattern region. The blocking film blocks ultraviolet light.

Abstract: A template includes: a base material having a surface including a first pattern, a second pattern and a third pattern, the first pattern including a first recess, the second pattern including a second recess. The base material containing a first material having a first refractive index; a first layer disposed in the first recess and containing a second material, the second material having a second refractive index different from the first refractive index; and a second layer disposed in the second recess, containing the second material, and being thicker than the first layer.

Abstract: An imprint method includes supplying a first photocurable resist to a first region of an object; irradiating the first resist with first light; forming a second resist over the object; bringing a template into contact with the second resist; and irradiating at least the second resist with second light through the template while the template is in contact with the second resist.

Abstract: According to one embodiment, a template for imprint patterning processes comprises a template substrate having a first surface and a pedestal on the first surface of the template substrate, the pedestal having a second surface spaced from the first surface in a first direction perpendicular to the first surface. A pattern is disposed on the second surface. The pedestal has a sidewall between the first surface and the second surface that is at an angle of less than 90° to the second surface.

Abstract: According to one embodiment, a template for imprint patterning processes comprises a template substrate having a first surface and a pedestal on the first surface of the template substrate, the pedestal having a second surface spaced from the first surface in a first direction perpendicular to the first surface. A pattern is disposed on the second surface. The pedestal has a sidewall between the first surface and the second surface that is at an angle of less than 90° to the second surface.

Abstract: According to one embodiment, an imprint lithography template comprises a substrate transparent to ultraviolet light. A first mesa region is on the substrate. A surface of the first mesa region includes a pattern region to be pressed into a photocurable resist film. The pattern region having four sides. A second mesa region is also on the substrate. The first mesa region protrudes from a surface of the second mesa region. A blocking film is adjacent to two sides of the four sides pattern region. The two sides to which the blocking film is adjacent are connected to each other at a corner of the pattern region. The blocking film blocks ultraviolet light.

Abstract: A template includes: a base material having a surface including a first pattern, a second pattern and a third pattern, the first pattern including a first recess, the second pattern including a second recess. The base material containing a first material having a first refractive index; a first layer disposed in the first recess and containing a second material, the second material having a second refractive index different from the first refractive index; and a second layer disposed in the second recess, containing the second material, and being thicker than the first layer.

Abstract: A pattern forming method includes forming a first resist pattern on a substrate using imprint lithography. And forming a resist onto the substrate at least at positions corresponding to a second resist pattern and then curing the resist to form the second resist pattern on the substrate.

Abstract: A pattern forming method includes forming a first resist pattern on a substrate using imprint lithography. And forming a resist onto the substrate at least at positions corresponding to a second resist pattern and then curing the resist to form the second resist pattern on the substrate.

Abstract: A template substrate includes a pedestal portion on a first surface of a substrate. The template substrate defines an opening region provided in a second surface opposite to the first surface of the substrate. The opening region includes an opening end on a second surface side of the opening region corresponding to the second surface and a bottom surface on a first surface side of the opening region corresponding to the first surface. An area of the opening end is different from an area of the bottom surface.

Abstract: A pattern forming method includes forming a first resist pattern on a substrate using imprint lithography. And forming a resist onto the substrate at least at positions corresponding to a second resist pattern and then curing the resist to form the second resist pattern on the substrate.

Abstract: According to one embodiment, a template for imprint patterning processes comprises a template substrate having a first surface and a pedestal on the first surface of the template substrate, the pedestal having a second surface spaced from the first surface in a first direction perpendicular to the first surface. A pattern is disposed on the second surface. The pedestal has a sidewall between the first surface and the second surface that is at an angle of less than 90° to the second surface.

Abstract: A template for patterning processes has a first protrusion portion on a first surface with a first step portion in a first region and a second step portion in a second region. The first step portion includes a plurality of first steps, at least one of which has a first step height and a first step width. The second step portion includes a plurality of second steps, at least one of which has the first step height and the first step width. The template includes a first recess portion on the first surface between the first and second regions on the first protrusion portion. The first recess portion has at least one of a recess depth different from the first step height and a recess width different from the first step width.

Abstract: A template substrate includes a pedestal portion on a first surface of a substrate. The template substrate defines an opening region provided in a second surface opposite to the first surface of the substrate. The opening region includes an opening end on a second surface side of the opening region corresponding to the second surface and a bottom surface on a first surface side of the opening region corresponding to the first surface. An area of the opening end is different from an area of the bottom surface.

Abstract: A template for patterning processes has a first protrusion portion on a first surface with a first step portion in a first region and a second step portion in a second region. The first step portion includes a plurality of first steps, at least one of which has a first step height and a first step width. The second step portion includes a plurality of second steps, at least one of which has the first step height and the first step width. The template includes a first recess portion on the first surface between the first and second regions on the first protrusion portion. The first recess portion has at least one of a recess depth different from the first step height and a recess width different from the first step width.

Abstract: A pattern forming method includes forming a first resist pattern on a substrate using imprint lithography. And forming a resist onto the substrate at least at positions corresponding to a second resist pattern and then curing the resist to form the a second resist pattern on the substrate.

Abstract: A cyclic-olefin-based thermoplastic resin for thermal imprint to be used in the production of a sheet or a film which contains at least one of skeletons represented by the following chemical equation 1 or the following chemical equation 2 in a main chain. The glass transition temperature Tg (° C.) and the value ([M]) of MFR at 260° C. satisfy the following equation 1, and [M]<30. The thermal imprint characteristics (transferability, mold release characteristic, and the like) are superior and the productivity (throughput) is improved.