Abstract: A micro-LED includes a light emitting device that emits a light beam surface—normally and a plurality of semiconductor layers that modify the light beam. Each semiconductor layer includes a first lateral region and a second lateral region, where the first lateral region and the second lateral region are characterized by different respective refractive indices. The first lateral regions of the plurality of semiconductor layers are arranged in two or more different lateral areas of the semiconductor light source. The second lateral region in each semiconductor layer of the plurality of semiconductor layers includes a semiconductor material with a different respective composition. The plurality of semiconductor layers form a planar optical component that is used to, for example, collimate, converge, diverge, or deflect the light beam emitted by the light emitting device.

Abstract: A micro-LED includes a light emitting device that emits a light beam surface-normally and a plurality of semiconductor layers that modify the light beam. Each semiconductor layer includes a first lateral region and a second lateral region, where the first lateral region and the second lateral region are characterized by different respective refractive indices. The first lateral regions of the plurality of semiconductor layers are arranged in two or more different lateral areas of the semiconductor light source. The second lateral region in each semiconductor layer of the plurality of semiconductor layers includes a semiconductor material with a different respective composition. The plurality of semiconductor layers form a planar optical component that is used to, for example, collimate, converge, diverge, or deflect the light beam emitted by the light emitting device.

Abstract: LED apparatuses featuring etched mesas and techniques for manufacturing LED apparatuses are described, including techniques for reducing surface recombination and techniques for charge carrier confinement. Etched facets of an LED mesa can be passivated using epitaxial regrowth of one or more semiconductor regrowth layers. The one or more semiconductor regrowth layers can include a transition layer. The transition layer can be configured with a bandgap energy between that of layers that are on opposite sides of the transition layer. A transition layer can separate an etched facet and another regrowth layer or separate two regrowth layers. In some instances, selective etching can be performed to preferentially etch a quantum well layer relative to a barrier layer. The selective etching removes surface imperfections, which contribute to surface recombination and which tend to be more prevalent in etched facets of the quantum well layer than etched facets of the barrier layer.

Abstract: A light source includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the p-type semiconductor layer and the n-type semiconductor layer and configured to emit light. The active region includes a plurality of barrier layers and one or more quantum well layers. The plurality of barrier layers of the active region includes at least one n-doped barrier layer that includes an n-type dopant. The active region is characterized by a lateral linear dimension equal to or less than about 10 ?m. The n-type dopant includes, for example, silicon, selenium, or tellurium.

Abstract: A method and system generate customized financial document templates in a document preparation system, according to one embodiment. The method and system receive document data from a user corresponding to a document including a plurality of custom data fields in a custom template. The method and system map the custom data fields to system data fields from a relatively small subset of data fields selected from a system data field pool based on the characteristics of the user. The method and system generate a custom form template based on the document data and the mapping of the custom data fields to system data fields.

Abstract: A method and system generate customized financial document templates in a document preparation system, according to one embodiment. The method and system receive document data from a user corresponding to a document including a plurality of custom data fields in a custom template. The method and system map the custom data fields to system data fields from a relatively small subset of data fields selected from a system data field pool based on the characteristics of the user. The method and system generate a custom form template based on the document data and the mapping of the custom data fields to system data fields.

Abstract: Disclosed herein are methods, systems, and apparatuses for an light emitting diode (LED) array apparatus. In some embodiments, the LED array apparatus may include a plurality of mesas etched from a layered epitaxial structure. The layered epitaxial structure may include a P-type doped semiconductor layer, a active layer, and an N-type doped semiconductor layer. The LED array apparatus may also include one or more regrowth semiconductor layers, including a first regrowth semiconductor layer, which may be grown epitaxially over etched facets of the plurality of mesas. In some cases, for each mesa, the first regrowth semiconductor layer may overlay etched facets of the P-type doped semiconductor layer, the active layer, and the N-type doped semiconductor layer, around an entire perimeter of the mesa.

Abstract: A method and system generate customized financial document templates in a document preparation system, according to one embodiment. The method and system receive document data from a user corresponding to a document including a plurality of custom data fields in a custom template. The method and system map the custom data fields to system data fields from a relatively small subset of data fields selected from a system data field pool based on the characteristics of the user. The method and system generate a custom form template based on the document data and the mapping of the custom data fields to system data fields.

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where ?15<x<?1 and 1<x<15 degrees.

Abstract: A method and system for generation of a customized financial document template in a financial management system, according to one embodiment. The method and system includes receiving a financial document that includes a plurality of data entries, according to one embodiment. The method and system includes mapping the plurality of data entries to a plurality of data fields of the financial management system, according to one embodiment. Mapping the plurality of data entries includes identifying characteristics of each of the plurality of data entries, and determining a relevance of the plurality of the data fields to the plurality of the data entries, at least partially based on the characteristics of the plurality of data entries, according to one embodiment. The method and system includes populating a custom financial document template, at least partially based on the mapping of the plurality of data entries to the plurality of data fields.

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where ?15<x<?1 and 1<x<15 degrees.

Abstract: A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the m-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.

Abstract: Disclosed is a method for processing GaN based substrate material for manufacturing light-emitting diodes, lasers, and other types of devices. In various embodiments, a GaN substrate is exposed to nitrogen and hydrogen at a high temperature. This process causes the surface of the GaN substrate to anneal and become smooth. Then other processes, such as growing epitaxial layers over the surface of GaN substrate, can be performed over the smooth surface of the GaN substrate.

Abstract: A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the in-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.

Abstract: A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the m-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.

Abstract: A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where ?15<x<?1 and 1<x<15 degrees.

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where ?15<x<?1 and 1<x<15 degrees.

Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

Abstract: An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.