Patents by Inventor Anwen Liu

Anwen Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS AND CIRCUITRY FOR PROGRAMMING NON-VOLATILE RESISTIVE SWITCHES USING VARISTORS
    Publication number: 20200075088
    Abstract: Integrated circuits with an array of programmable resistive switch elements are provided. A programmable resistive switch element may include two non-volatile resistive memory elements connected in series and two varistors. A first of the two varistors is used to program a top resistive memory element in the resistive switch element, whereas a second of the two varistors is used to program a bottom resistive memory element in the resistive switch element. Row and column drivers implemented using only thin gate oxide transistors are used to program a selected resistive switch in the array without violating a maximum voltage level that satisfies predetermined defects per million (DPM) reliability criteria.
    Type: Application
    Filed: August 28, 2018
    Publication date: March 5, 2020
    Applicant: Intel Corporation
    Inventors: Yue-Song He, Rusli Kurniawan, Richard G. Smolen, Christopher J. Pass, Andy L. Lee, Jeffrey T. Watt, Anwen Liu, Alok Nandini Roy
  • Methods and circuitry for programming non-volatile resistive switches using varistors
    Patent number: 10573375
    Abstract: Integrated circuits with an array of programmable resistive switch elements are provided. A programmable resistive switch element may include two non-volatile resistive memory elements connected in series and two varistors. A first of the two varistors is used to program a top resistive memory element in the resistive switch element, whereas a second of the two varistors is used to program a bottom resistive memory element in the resistive switch element. Row and column drivers implemented using only thin gate oxide transistors are used to program a selected resistive switch in the array without violating a maximum voltage level that satisfies predetermined defects per million (DPM) reliability criteria.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: February 25, 2020
    Assignee: Intel Corporation
    Inventors: Yue-Song He, Rusli Kurniawan, Richard G. Smolen, Christopher J. Pass, Andy L. Lee, Jeffrey T. Watt, Anwen Liu, Alok Nandini Roy