Patents by Inventor Anyi MEI

Anyi MEI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DIELECTRIC LAYER RESPONSE-BASED FIELD EFFECT TRANSISTOR PHOTODETECTOR
    Publication number: 20240304743
    Abstract: This disclosure relates to a dielectric layer response-based field effect transistor photodetector, comprising a gate, a photoelectric response composite dielectric layer, a carrier transport layer, a source, and a drain. The composite dielectric layer is formed by compounding a photoelectric response dielectric and a charge blocking insulating dielectric; the carrier transport layer is used for transporting electrons or holes, the photoelectric response dielectric is used for absorbing light under illumination to generate electrons, holes or excitons, and the charge blocking insulating dielectric is used for limiting passage of the electrons, holes or excitons.
    Type: Application
    Filed: December 3, 2021
    Publication date: September 12, 2024
    Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Anyi MEI, Hongwei HAN
  • Ferroelectric enhanced solar cell and preparation method thereof
    Patent number: 11127535
    Abstract: A ferroelectric enhanced solar cell, including a conductive substrate, and a hole blocking layer, a mesoporous nanocrystalline layer, a mesoporous spacer layer and a mesoporous back electrode sequentially deposited in that order on the conductive substrate. The mesopores of at least one of the mesoporous nanocrystalline layer, the mesoporous spacer layer and the mesoporous back electrode are filled with a photoactive material. At least one of the hole blocking layer, the mesoporous nanocrystalline layer and the mesoporous spacer layer includes a ferroelectric material or a ferroelectric nanocomposite.
    Type: Grant
    Filed: October 17, 2019
    Date of Patent: September 21, 2021
    Assignee: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Hongwei Han, Anyi Mei, Shuang Liu, Xiaolei Li, Deyi Zhang
  • FERROELECTRIC ENHANCED SOLAR CELL AND PREPARATION METHOD THEREOF
    Publication number: 20200051753
    Abstract: A ferroelectric enhanced solar cell, including a conductive substrate, and a hole blocking layer, a mesoporous nanocrystalline layer, a mesoporous spacer layer and a mesoporous back electrode sequentially deposited in that order on the conductive substrate. The mesopores of at least one of the mesoporous nanocrystalline layer, the mesoporous spacer layer and the mesoporous back electrode are filled with a photoactive material. At least one of the hole blocking layer, the mesoporous nanocrystalline layer and the mesoporous spacer layer includes a ferroelectric material or a ferroelectric nanocomposite.
    Type: Application
    Filed: October 17, 2019
    Publication date: February 13, 2020
    Inventors: Hongwei HAN, Anyi MEI, Shuang LIU, Xiaolei LI, Deyi ZHANG
  • Perovskite photoelectric functional material modified with amphipathic molecule, and methods for preparing and using the same
    Patent number: 10059875
    Abstract: A perovskite-based photoelectric functional material having a general formula MzAyBXz+y+2. The matrix of the photoelectric functional material is a perovskite material ABX3, M is an organic amphipathic molecule used as a modification component of the matrix, 0<z?0.5, 0<y?1, and y+z?1.
    Type: Grant
    Filed: December 27, 2015
    Date of Patent: August 28, 2018
    Assignee: WONDER SOLAR LIMITED LIABILITY COMPANY
    Inventors: Hongwei Han, Anyi Mei
  • PEROVSKITE PHOTOELECTRIC FUNCTIONAL MATERIAL MODIFIED WITH AMPHIPATHIC MOLECULE, AND METHODS FOR PREPARING AND USING THE SAME
    Publication number: 20160137915
    Abstract: A perovskite-based photoelectric functional material having a general formula MzAyBXz+y+2. The matrix of the photoelectric functional material is a perovskite material ABX3, M is an organic amphipathic molecule used as a modification component of the matrix, 0<z?0.5, 0<y?1, and y+z?1.
    Type: Application
    Filed: December 27, 2015
    Publication date: May 19, 2016
    Inventors: Hongwei HAN, Anyi MEI