Patents by Inventor Anyuan Zhang

Anyuan Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210244657
    Abstract: Disclosed in the present invention are an edaravone pharmaceutical composition and an application thereof as a sublingual preparation, the pharmaceutical composition containing edaravone or a salt thereof and mannitol. A sublingual administration preparation can avoid the first-pass effect of the liver, and samples feature good stability, convenience of transport and of use, among other advantages.
    Type: Application
    Filed: December 27, 2018
    Publication date: August 12, 2021
    Applicants: BEIJING TIANTAN HOSPITAL, CAPITAL MEDICAL UNIVERSITY, NANJING BAIXINYU PHARMACEUTICAL CO. LTD.
    Inventors: Yilong WANG, Yongjun WANG, Xingquan ZHAO, Anyuan ZHANG
  • Patent number: 8658684
    Abstract: A pharmaceutical composition comprises 3-methyl-1-phenyl-2-pyrazolin-5-one and borneol, and can be used to prepare the medicine for treating cerebrovascular diseases.
    Type: Grant
    Filed: March 3, 2009
    Date of Patent: February 25, 2014
    Assignee: Jiangsu Simcere Pharmaceutical R & D Co., Ltd.
    Inventors: Xiaojin Yin, Shibao Yang, Xiaoqiang Li, Zheng Jiang, Jian He, Anyuan Zhang, Xin Huang
  • Patent number: 8384179
    Abstract: A black silicon based metal-semiconductor-metal photodetector includes a silicon substrate and a black silicon layer formed on the silicon substrate. An interdigitated electrode pattern structure is formed on the black silicon layer, which can be a planar or U-shaped structure. A thin potential barrier layer is deposited at the interdigitated electrode pattern structure. An Al or transparent conductive ITO thin film is deposited on the thin potential barrier layer. A passivation layer is provided on the black silicon layer. In the black silicon based metal-semiconductor-metal photodetector, the black silicon layer, as a light-sensitive area, can respond to ultraviolet, visible and near infrared light.
    Type: Grant
    Filed: July 13, 2010
    Date of Patent: February 26, 2013
    Assignee: University of Electronic Science and Technology of China
    Inventors: Yadong Jiang, Jing Jiang, Anyuan Zhang, Zhengyu Guo, Guodong Zhao, Zhiming Wu, Wei Li
  • Publication number: 20120012967
    Abstract: A black silicon based metal-semiconductor-metal photodetector includes a silicon substrate and a black silicon layer formed on the silicon substrate. An interdigitated electrode pattern structure is formed on the black silicon layer, which can be a planar or U-shaped structure. A thin potential barrier layer is deposited at the interdigitated electrode pattern structure. An Al or transparent conductive ITO thin film is deposited on the thin potential barrier layer. A passivation layer is provided on the black silicon layer. In the black silicon based metal-semiconductor-metal photodetector, the black silicon layer, as a light-sensitive area, can respond to ultraviolet, visible and near infrared light.
    Type: Application
    Filed: July 13, 2010
    Publication date: January 19, 2012
    Inventors: Yadong Jiang, Guodong Zhao, Zhiming Wu, Wei Li, Jing Jiang, Anyuan Zhang, Zhengyu Guo
  • Publication number: 20110003873
    Abstract: A pharmaceutical composition comprises 3-methyl-1-phenyl-2-pyrazolin-5-one and borneol, and can be used to prepare the medicine for treating cerebrovascular diseases.
    Type: Application
    Filed: March 3, 2009
    Publication date: January 6, 2011
    Applicant: Jiangsu Simcere Pharmaceutical R&D Co., Ltd.
    Inventors: Xiaojin Yin, Shibao Yang, Xiaoqiang Li, Zheng Jiang, Jian He, Anyuan Zhang, Xin Huang