Abstract: A seat cushion is formed integrally by a body pad portion, an outer peripheral edge portion, and a connection portion. The outer peripheral edge portion protrudes toward a floor panel from the outer peripheral edge portion in a plan view and contacts a floor panel at its lower face. The connection portion is provided to protrude toward the floor panel at a portion which is separated from a front-side part of the outer peripheral edge portion and a rear-side part of the outer peripheral edge portion, respectively. The connection portion connects the floor panel and the body pad portion. A portion between the front-side part and the rear-side part of the outer peripheral edge portion in a vehicle longitudinal direction is a separation portion where a lower face of the seat cushion faces an upper face of the floor panel with a gap.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a reformer configured to partially reform a first substrate to form a reformed layer between a first portion and a second portion in the first substrate. The apparatus further includes a joiner configured to form a joining layer between the first portion and a second substrate to join the first portion and the second substrate. The apparatus further includes a remover configured to remove the second portion from a surface of the second substrate while making the first portion remain on the surface of the second substrate by separating the first portion and the second portion.

Abstract: According to one embodiment, in a semiconductor device, a first film is arranged on a side of a main surface of the substrate. A second film is arranged on an opposite side of the substrate with the first film interposed therebetween. A main surface of the second film is in contact with a main surface of the first film. A third film is arranged on an opposite side of the first film with the second film interposed therebetween. A main surface on a side of the substrate of the third film has two-dimensionally-distributed protrusions or recesses. A main surface on an opposite side of the substrate of the third film is flat. Absorptance of infrared light of the second film is higher than absorptance of the infrared light of the third film. Thermal expansion coefficient of the third film is different from thermal expansion coefficient of the second film.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a reformed layer former configured to partially reform a first substrate to form a reformed layer between first and second portions in the first substrate, a peeling layer former configured to form a peeling layer between the second portion and a second substrate provided on the first substrate, and a remover configured to remove the second portion from the second substrate while causing the first portion to remain on the second substrate. The remover includes a heater to heat the first or second portion, to peel the second portion from the second substrate at the peeling layer and divide the first and second portions from each other, and a mover to move the second substrate relative to the second portion, to remove the second portion from the second substrate while causing the first portion to remain on the second substrate.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a reformer configured to partially reform a first substrate to form a reformed layer between a first portion and a second portion in the first substrate. The apparatus further includes a joiner configured to form a joining layer between the first portion and a second substrate to join the first portion and the second substrate. The apparatus further includes a remover configured to remove the second portion from a surface of the second substrate while making the first portion remain on the surface of the second substrate by separating the first portion and the second portion.