Abstract: Provided is a depth measurement system comprising a plurality of depth measurement devices which each calculate a depth index value indicating the relative depth of a pattern on a sample, wherein: the plurality of depth measurement devices are classified into one reference device 1001 and an other correction target device 1002; the depth measurement devices each execute a depth measurement recipe for measuring the depth of a predetermined pattern in a measurement subject so as to calculate the depth index value of the predetermined pattern on the basis of a measurement value extracted from an obtained electronic image; and the correction target device stores a correction coefficient associated with the depth measurement recipe and outputs the depth index value of the predetermined pattern which has been corrected using a mathematical model to which the correction coefficient is applied.

Abstract: A semiconductor manufacturing apparatus according to the present embodiment includes a table, a shaft, a sensor, and a first control unit. The table has a first surface on which a processing target object is placed, and is rotatable about a rotational axis in a first direction substantially orthogonal to the first surface. The shaft rotatably and movably holds a blade that machines the processing target object. The sensor measures a thickness of processing target object in a region to be machined by the blade. The first control unit controls rotation and movement of the shaft. The first control unit controls movement of the blade in the first direction based on a result of the measurement by the sensor.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a reformer configured to partially reform a first substrate to form a reformed layer between a first portion and a second portion in the first substrate. The apparatus further includes a joiner configured to form a joining layer between the first portion and a second substrate to join the first portion and the second substrate. The apparatus further includes a remover configured to remove the second portion from a surface of the second substrate while making the first portion remain on the surface of the second substrate by separating the first portion and the second portion.

Abstract: According to one embodiment, in a semiconductor device, a first film is arranged on a side of a main surface of the substrate. A second film is arranged on an opposite side of the substrate with the first film interposed therebetween. A main surface of the second film is in contact with a main surface of the first film. A third film is arranged on an opposite side of the first film with the second film interposed therebetween. A main surface on a side of the substrate of the third film has two-dimensionally-distributed protrusions or recesses. A main surface on an opposite side of the substrate of the third film is flat. Absorptance of infrared light of the second film is higher than absorptance of the infrared light of the third film. Thermal expansion coefficient of the third film is different from thermal expansion coefficient of the second film.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a reformed layer former configured to partially reform a first substrate to form a reformed layer between first and second portions in the first substrate, a peeling layer former configured to form a peeling layer between the second portion and a second substrate provided on the first substrate, and a remover configured to remove the second portion from the second substrate while causing the first portion to remain on the second substrate. The remover includes a heater to heat the first or second portion, to peel the second portion from the second substrate at the peeling layer and divide the first and second portions from each other, and a mover to move the second substrate relative to the second portion, to remove the second portion from the second substrate while causing the first portion to remain on the second substrate.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a reformer configured to partially reform a first substrate to form a reformed layer between a first portion and a second portion in the first substrate. The apparatus further includes a joiner configured to form a joining layer between the first portion and a second substrate to join the first portion and the second substrate. The apparatus further includes a remover configured to remove the second portion from a surface of the second substrate while making the first portion remain on the surface of the second substrate by separating the first portion and the second portion.