Abstract: A solar call is provided along with a method for forming a semiconductor nanocrystalline silicon insulating thin-film with a tunable bandgap. The method provides a substrate and introduces a silicon (Si) source gas with at least one of the following source gases: germanium (Ge), oxygen, nitrogen, or carbon into a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. A SiOxNyCz thin-film embedded with a nanocrystalline semiconductor material is deposited overlying the substrate, where x, y, z?0, and the semiconductor material is Si, Ge, or a combination of Si and Ge. As a result, a bandgap is formed in the SiOxNyCz thin-film, in the range of about 1.9 to 3.0 electron volts (eV). Typically, the semiconductor nanoparticles have a size in a range of 1 to 20 nm.

Abstract: A switchable viewing angle display method is provided. The method provides a front panel array of display pixels. Also provided is an array of microlenses underlying the array of display pixels. Each microlens has a focal point and each microlens is associated with a corresponding block of display pixels. A backlight panel has an edge-coupled waveguide pipe with an optical input connected to a column of light emitting diodes (LEDs). The backlight panel includes a top array of selectively enabled extraction pixels, a planar mirror underlying the waveguide pipe, and a bottom array of selectively enabled extraction pixels interposed between the waveguide pipe and the planar mirror. In response to accepting a display viewing angle change command, an extraction pixel is enabled from either the top array or the bottom array, and a waveguide pipe light extraction position is formed, changing the viewing angle.

Abstract: A switchable viewing angle display method is provided, using arrayed microlenses and a waveguide pipe with selectable light extraction positions. The method provides a front panel array of display pixels. Also provided is an array of microlenses underlying the array of display pixels. Each microlens has a focal point and each microlens is associated with a corresponding block of display pixels. A backlight panel has an edge-coupled waveguide pipe with an optical input connected to a column of light emitting diodes (LEDs). The backlight panel includes an array extraction pixels, each extraction pixel underlying a corresponding microlens, and the backlight panel also includes a planar mirror underlying the waveguide pipe. In response to a display viewing angle change command, a waveguide pipe's light extraction position is selected, which is the distance between the extraction pixels and their corresponding microlenses, and the display viewing angle is changed.

Abstract: A bottom-contacted top gate (TG) thin film transistor (TFT) with independent field control for off-current suppression is provided, along with an associated fabrication method. The method provides a substrate, and forms source and drain regions overlying the substrate, each having a channel interface top surface. A channel is interposed between the source and drain, with source and drain contact regions immediately overlying the source/drain (S/D) interface top surfaces, respectively. A first dielectric layer is formed overlying the source, drain, and channel. A first gate is formed overlying the first dielectric, having a drain sidewall located between the contact regions. A second dielectric layer is formed overlying the first gate and first dielectric. A second gate overlies the second dielectric, located over the drain contact region.

Abstract: A method is provided for forming a reflective plasmonic display. The method provides a substrate and deposits a bottom dielectric layer. A conductive film is deposited overlying the bottom dielectric layer. A hard mask is formed with nano-size openings overlying the conductive film. The conductive film is plasma etched via nano-size openings in the hard mask, stopping at the dielectric layer. After removing the hard mask, a conductive film is left with nano-size openings to the dielectric layer. Metal is deposited in the nano-size openings, creating a pattern of metallic nanoparticles overlying the dielectric layer. Then, the conductive film is removed. The hard mask may be formed by conformally depositing an Al film overlying the conductive film and anodizing the Al film, creating a hard mask of porous anodized Al oxide (AAO) film. The porous AAO film may form a short-range hexagonal, and long-range random order hole patterns.

Abstract: A plasmonic polarizer and a method for fabricating the plasmonic polarizer are provided. The method deposits alternating layers of non-metallic film and metal, forming a stack. A hard mask is formed overlying the stack. The hard mask comprises structures having dimensions and periods between adjacent structures less than a first length, where the first length is equal to (a first wavelength of light/2). The stack is etched through openings in the hard mask to form pillar stacks of alternating non-metallic and metal layers having the dimensions of the hard mask structures. Then, the hard mask structures are removed. In one aspect, subsequent to removing the hard mask structures, the spaces between the pillar stacks are filled with a dielectric material.

Abstract: A plasmonic optical device is provided operating in near ultra violet (UV) and visible wavelengths of light. The optical device is made from a substrate and nanoparticles. The nanoparticles have a core with a negative real value relative permittivity of absolute value greater than 10 in a first range of wavelengths including near UV and visible wavelengths of light, and a shell with an imaginary relative permittivity of less than 5 in the first range of wavelengths. A dielectric overlies the substrate, and is embedded with the nanoparticles. If the substrate is reflective, a reflective optical filter is formed. If the substrate is transparent, the filter is transmissive. In one aspect, the dielectric is a tunable medium (e.g., liquid crystal) having an index of refraction responsive to an electric field. The tunable medium is interposed between a first electrode and a second electrode.

Abstract: Methods are provided for fabricating a multi-structure pore membrane. In one method, an anodized aluminum oxide (AAO) template is formed with an array of pores exposing underlying regions of a conductive layer top surface. A plurality of photoresist layers is patterned to sequentially expose a plurality of AAO template sections. Each exposed AAO template section is sequentially etched to widen pore diameters, so that each AAO template section may be associated with a corresponding unique pore diameter. A target material is deposited in the pores of the AAO template and, as a result, an array of target material structures is formed on the top surface, where the target material structures associated with each AAO template section have a corresponding diameter. Also provided is a multi-structure pixel device formed with subpixels having different structure dimensions.

Abstract: An electrical pressure sensor is provided with a method for measuring pressure applied to a sensor surface. The method provides an electrical pressure sensor including a sealed chamber with a top surface, first electrode, second electrode, an elastic polymer medium, and metallic nanoparticles distributed in the elastic polymer medium. When the top surface of the sensor is deformed in response to an applied pressure, the elastic polymer medium is compressed. In response to decreasing the metallic nanoparticle-to-metallic nanoparticle mean distance between metallic nanoparticles, the electrical resistance is decreased between the first and second electrodes through the elastic polymer medium.

Abstract: A system and method are provided for using bubble structures to control the extraction of light from a waveguide top surface. The method determines a maximum angle (?) of light propagation through a waveguide medium relative to a first horizontal direction parallel to a waveguide top surface. A plurality of bubble structures is provided having a refractive index less than the waveguide medium. The bubble structures have a base, and sides formed at an acute angle upwards with respect to the base. The bubble structure bases are separated by gap (W), have a height (H), and have a top separated from a waveguide top surface by a space (h). The method varies the gap (W), the height (H), and the space (h). In response, the intensity of light extraction at even the maximum angle (?) of light propagation, can be controlled from the waveguide top surface.

Abstract: A system and method are provided for designing a waveguide with uniform light extraction. Due to the complex nature of the calculations required, the method may be enabled as a set of software instructions, stored as a sequence of steps in a non-transitory memory for execution by a processor. The method accepts parameters for a waveguide panel, light sources, and light extraction features associated with the waveguide panel. Also accepted as an input are target light extraction goals. The method divides the waveguide panel into n subpanels, where n is an integer greater than 1. For each subpanel, waveguide propagation restrictions are defined. The light extraction features are modeled for each subpanel in response to the target extraction goals, and the waveguide, panel is designed using the light extraction features modeled for each subpanel.

Abstract: A system and method are provided for using bubble structures to control the extraction of light from a waveguide top surface. The method determines a maximum angle (?) of light propagation through a waveguide medium relative to a first horizontal direction parallel to a waveguide top surface. A plurality of bubble structures is provided having a refractive index less than the waveguide medium. The bubble structures have a base, and sides formed at an acute angle upwards with respect to the base. The bubble structure bases are separated by gap (W), have a height (H), and have a top separated from a waveguide top surface by a space (h). The method varies the gap (W), the height (H), and the space (h). In response, the intensity of light extraction at even the maximum angle (?) of light propagation, can be controlled from the waveguide top surface.

Abstract: A top gate and bottom gate thin film transistor (TFT) are provided with an associated fabrication method. The TFT is fabricated from a substrate, and an active metal oxide semiconductor (MOS) layer overlying the substrate. Source/drain (S/D) regions are formed in contact with the active MOS layer. A channel region is interposed between the S/D regions. The TFT includes a gate electrode, and a gate dielectric interposed between the channel region and the gate electrode. The active MOS layer may be ZnOx, InOx, GaOx, SnOx, or combinations of the above-mentioned materials. The active MOS layer also includes a primary dopant such as H, K, Sc, La, Mo, Bi, Ce, Pr, Nd, Sm, Dy, or combinations of the above-mentioned dopants. The active MOS layer may also include a secondary dopant.

Abstract: An electrical pressure-sensitive reflective display includes an array of display pixels, each with a transparent top surface, first electrode, second electrode, an elastic polymer medium, and metallic nanoparticles distributed in the elastic polymer medium. When a first voltage potential is applied between the first and second electrodes of each display pixel, a first color is reflected from the incident spectrum of light, assuming no pressure is applied on the top surface of each display pixel. When the top surface of a first display pixel is deformed in response to an applied pressure, the elastic polymer medium in the first display pixel is compressed, decreasing the metallic nanoparticle-to-metallic nanoparticle mean distance in the first display pixel. In response to decreasing the metallic nanoparticle-to-metallic nanoparticle mean distance, the color reflected from the incident spectrum of light by the second display pixel is changed from the first color to second color.

Abstract: A plasmonic display device is provided that uses physical modulation mechanisms. The device is made from an electrically conductive bottom electrode and a first dielectric layer overlying the bottom electrode. The first dielectric layer is a piezoelectric material having an index of expansion responsive to an electric field. An electrically conductive top electrode overlies the first dielectric layer. A first plasmonic layer, including a plurality of discrete plasmonic particles, is interposed between the top and bottom electrodes and in contact with the first dielectric layer. In one aspect, the plasmonic particles are an expandable polymer material covered with a metal coating having a size responsive to an electric field.

Abstract: A solution process is provided for forming a textured transparent conductive oxide (TCO) film. The process provides a substrate, and forms a first layer on the substrate of metal oxide nanoparticles such as ZnO, In2O3, or SnO2. The metal oxide nanoparticles have a faceted structure with an average size greater than 100 nanometers (nm). Voids between the metal oxide nanoparticles have a size about equal to the size of the metal oxide nanoparticles. Then, a second layer is formed overlaying the first layer, filling the voids between the nanoparticles of the first layer, and completely covering the substrate. The result is a continuous TCO film having an average surface roughness that is created by the combination of first and second layers.

Abstract: A method is provided for color tuning a plasmonic device with a color tunable electronic skin. A plasmonic electronic skin is used, including a first substrate, a plasmonic structure, an electrically conductive transparent first electrode layer, an electrically conductive transparent second electrode layer, and a polymer-networked liquid crystal (PNLC) layer interposed between the first and second transparent electrode layers. In response to receiving a color tuning voltage, a full visible spectrum incident light, and a PNLC switch voltage, the plasmonic structure generates a first primary color. A primary color exhibits a single wavelength peak with a spectral full width at half magnitudes (FWHMs) in the visible spectrum of light. In response to receiving the PNLC switch voltage between the first and second electrode layers, the PNLC layer passes incident light.

Abstract: A plasmonic display device is provided with liquid crystal dipole molecule control. The device is made from a first set of electrodes including at least one electrically conductive top electrode and at least one electrically conductive bottom electrode capable of generating a first electric field in a first direction. A second set of electrodes, including an electrically conductive right electrode and an electrically conductive left electrode, is capable of generating a second electric field in a second first direction. A dielectric layer overlies the bottom electrode, made from a liquid crystal material with molecules having dipoles responsive to an electric field. A plasmonic layer, including a plurality of discrete plasmonic particles, is interposed between the first and second set of electrodes and in contact with the dielectric layer. In one aspect, the plasmonic layer is embedded in the dielectric layer.

Abstract: A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for short wavelength luminescence applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including the element of N, O, or C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film has a peak photoluminescence (PL) at a wavelength in the range of 475 to 750 nanometers.

Abstract: A plasmonic display device is provided having dual modulation mechanisms. The device has an electrically conductive bottom electrode that may be either transparent or reflective. A dielectric layer overlies the bottom electrode, made from an elastic polymer material having a refractive index responsive to an electric field. An electrically conductive top electrode, either transparent or reflective, overlies the dielectric layer. A plasmonic layer, including a plurality of discrete plasmonic particles, is interposed between the top and bottom electrodes and in contact with the dielectric layer. In one aspect, the plasmonic layer is embedded in the dielectric layer. Alternately, the plasmonic layer overlies the bottom (or top) electrode. Then, the dielectric layer overlies the plasmonic layer particles and exposed regions of the bottom electrode between the first plasmonic layer particles.