Abstract: A current sensor is described comprising an integrated circuit for sensing electric currents comprising an active side, the active side comprising at least one sensing element and at least one contact pad and a housing comprising material embedding the integrated circuit arranged for allowing electric connection to the at least two contact pads of the active side of the integrated circuit. The housing comprises at least one conductive via disposed outside the integrated circuit and connected to the at least one contact pad, for distributing signals from the at least one contact pad through the housing away from the active side of the integrated circuit.

Abstract: A magnetic flux concentrator (MFC) structure comprises a substrate, a first metal layer disposed on or over the substrate, and a second metal layer disposed on or over the first metal layer. Each metal layer comprises (i) a first wire layer comprising first wires conducting electrical signals, and (ii) a first dielectric layer disposed on the first wire layer. A magnetic flux concentrator is disposed at least partially in the first metal layer, in the second metal layer, or in both the first and the second metal layers. The structure can comprise an electronic circuit or a magnetic sensor with sensing plates. The structure can comprise a transformer or an electromagnet with suitable control circuits. The magnetic flux concentrator can comprise a metal stress-reduction layer in the first or second wire layers and a core formed by electroplating the stress-reduction layer.

Abstract: A method of manufacturing a sensor device comprising: configuring a moulding support structure and a packaging mould so as to provide predetermined pathways to accommodate a moulding compound, the moulding support structure defining a first notional volume adjacent a second notional volume. An elongate sensor element and the moulding support structure are configured so that the moulding support structure fixedly carries the elongate sensor element and the elongate sensor element resides substantially in the first notional volume and extends towards the second notional volume, the elongate sensor element having an electrical contact electrically coupled to another electrical contact disposed within the second notional volume. The moulding support structure carrying (102) the elongate sensor element is disposed within the packaging mould (106).

Abstract: A current sensor is described comprising an integrated circuit for sensing electric currents comprising an active side, the active side comprising at least one sensing element and at least one contact pad and a housing comprising material embedding the integrated circuit arranged for allowing electric connection to the at least two contact pads of the active side of the integrated circuit. The housing comprises at least one conductive via disposed outside the integrated circuit and connected to the at least one contact pad, for distributing signals from the at least one contact pad through the housing away from the active side of the integrated circuit.

Abstract: A controller configured for detecting a disturbance using a comparison of outputs of at least two sensors and for determining a pressure from the outputs of the at least two sensors. A ratio of the measurement sensitivity and the disturbance sensitivity should be different for the at least two sensors. A method for monitoring disturbances of a sensor assembly includes comparing the outputs of the at least two sensors. The controller and related method provide, while requiring only two sensors, a redundant system that is also able to detect excessive disturbances on a sensor assembly.

Abstract: A method for creating an electrical contact between semiconductor layers which are separated by an isolating connection layer. The method comprising: providing a layered stack comprising at least a first semiconductor layer, an isolating connection layer, and a second semiconductor layer, wherein the isolating connection layer is between first semiconductor layer and the second semiconductor layer; laser grooving at least one laser groove in the stack through the first semiconductor layer and the isolating connection layer and partly in the second semiconductor layer, leaving a remainder of the second semiconductor layer; cutting the remainder of the second semiconductor layer.

Abstract: A magnetic flux concentrator (MFC) structure comprises a substrate, a first metal layer disposed on or over the substrate, and a second metal layer disposed on or over the first metal layer. Each metal layer comprises (i) a first wire layer comprising first wires conducting electrical signals, and (ii) a first dielectric layer disposed on the first wire layer. A magnetic flux concentrator is disposed at least partially in the first metal layer, in the second metal layer, or in both the first and the second metal layers. The structure can comprise an electronic circuit or a magnetic sensor with sensing plates. The structure can comprise a transformer or an electromagnet with suitable control circuits. The magnetic flux concentrator can comprise a metal stress-reduction layer in the first or second wire layers and a core formed by electroplating the stress-reduction layer.

Abstract: A method of manufacturing a sensor device comprising: configuring a moulding support structure and a packaging mould so as to provide predetermined pathways to accommodate a moulding compound, the moulding support structure defining a first notional volume adjacent a second notional volume. An elongate sensor element and the moulding support structure are configured so that the moulding support structure fixedly carries the elongate sensor element and the elongate sensor element resides substantially in the first notional volume and extends towards the second notional volume, the elongate sensor element having an electrical contact electrically coupled to another electrical contact disposed within the second notional volume. The moulding support structure carrying (102) the elongate sensor element is disposed within the packaging mould (106).

Abstract: A method of manufacturing a sensor device (100) comprises providing (200) a package (102) having a first die-receiving subframe volume (104) separated from a second die-receiving subframe volume (106) by a partition wall (116). An elongate sensor element (120) is disposed (202) within the package (102) so as to bridge the first and second subframe volumes (104, 106) and to overlie the partition wall (116). The elongate sensor element (120) resides substantially in the first subframe volume (104) and partially in the second subframe volume (106). The elongate sensor element (120) is electrically connected within the second subframe volume (106).

Abstract: A piezo-resistor sensor includes a diffusion of a first conductivity type in a well of an opposite second type, contacts with islands in the diffusion, interconnects with the contacts, and a shield covers the diffusion between the contacts and extends over side walls of the diffusion between the contacts. Each interconnect covers the diffusion at the corresponding contact and extends over edges of the diffusion, and each island is at a side covered by its interconnect. A guard ring of the second type is around the diffusion. The shield covers the well between the diffusion and the ring and the edge of the ring facing the diffusion. If a gap between the shield and the interconnect is present, the ring bridges this gap, and/or the edges of the diffusion are completely covered by the combination of the shield and the interconnects.

Abstract: A controller configured for monitoring disturbances of a pressure sensor assembly includes at least two sensors. The at least two sensors are configured for measuring a pressure and wherein the at least two sensors have a sensor dependent measurement sensitivity for the pressure, and at least one of the sensors is sensitive for a disturbance with a sensor dependent disturbance sensitivity. A ratio of the measurement sensitivity and the disturbance sensitivity is different for the at least two sensors. The controller is configured for detecting the disturbance by comparing outputs of the at least two sensors.

Abstract: A semiconductor device comprises a first doped semiconductor layer, a second doped semiconductor layer, an oxide layer covering the first doped semiconductor layer and the second doped semiconductor layer, and an interconnect. The first doped semiconductor layer is electrically connected with the second doped semiconductor layer by means of the interconnect which crosses over a sidewall of the second doped semiconductor layer. The interconnect comprises a metal filled slit in the oxide layer. At least one electronic component is formed in the first and/or second semiconductor layer. The semiconductor device moreover comprises a passivation layer which covers the first and second doped semiconductor layers and the oxide layer.

Abstract: A pressure sensor device comprises a device package (110) arranged to define a cavity (116) having an opening for fluid communication with an internal volume thereof. The cavity (116) comprises a side wall (114, 115). An elongate pressure sensor element (100) is provided and has a proximal end (120) and a distal end (122). The side wall (114, 115) is arranged to hold fixedly the proximal end (120) of the pressure sensor element (100) therein so that the pressure sensor element (100) is cantilever-suspended from the side wall (114, 115) within the cavity (116).

Abstract: A semiconductor device comprising a first and second doped semiconductor layer wherein the first layer is a monosilicon layer and the second layer is a polysilicon layer, an oxide layer covering the first and second layer, and an interconnect which electrically connects the first and second layer comprises a metal alloy which has a first part in contact with the first layer and a second part in contact with the second layer, wherein a part of the metal alloy between the first and the second part crosses over a sidewall of the second layer; at least one electronic component is formed in the first and/or second layer; the semiconductor device moreover comprises a stoichiometric passivation layer which covers the first and second layer and the oxide layer.

Abstract: A piezo-resistor sensor includes a diffusion of a first conductivity type in a well of an opposite second type, contacts with islands in the diffusion, interconnects with the contacts, and a shield covers the diffusion between the contacts and extends over side walls of the diffusion between the contacts. Each interconnect covers the diffusion at the corresponding contact and extends over edges of the diffusion, and each island is at a side covered by its interconnect. A guard ring of the second type is around the diffusion. The shield covers the well between the diffusion and the ring and the edge of the ring facing the diffusion. If a gap between the shield and the interconnect is present, the ring bridges this gap, and/or the edges of the diffusion are completely covered by the combination of the shield and the interconnects.

Abstract: A magnetic flux concentrator (MFC) structure comprises a substrate, a first metal layer disposed on or over the substrate, and a second metal layer disposed on or over the first metal layer. Each metal layer comprises (i) a first wire layer comprising first wires conducting electrical signals, and (ii) a first dielectric layer disposed on the first wire layer. A magnetic flux concentrator is disposed at least partially in the first metal layer, in the second metal layer, or in both the first and the second metal layers. The structure can comprise an electronic circuit or a magnetic sensor with sensing plates. The structure can comprise a transformer or an electromagnet with suitable control circuits. The magnetic flux concentrator can comprise a metal stress-reduction layer in the first or second wire layers and a core formed by electroplating the stress-reduction layer.

Abstract: A current sensor is described comprising an integrated circuit for sensing electric currents comprising an active side, the active side comprising at least one sensing element and at least one contact pad and a housing comprising material embedding the integrated circuit arranged for allowing electric connection to the at least two contact pads of the active side of the integrated circuit. The housing comprises at least one conductive via disposed outside the integrated circuit and connected to the at least one contact pad, for distributing signals from the at least one contact pad through the housing away from the active side of the integrated circuit.

Abstract: A method of manufacturing a sensor device comprising: configuring a moulding support structure and a packaging mould so as to provide predetermined pathways to accommodate a moulding compound, the moulding support structure defining a first notional volume adjacent a second notional volume. An elongate sensor element and the moulding support structure are configured so that the moulding support structure fixedly carries the elongate sensor element and the elongate sensor element resides substantially in the first notional volume and extends towards the second notional volume, the elongate sensor element having an electrical contact electrically coupled to another electrical contact disposed within the second notional volume. The moulding support structure carrying (102) the elongate sensor element is disposed within the packaging mould (106).

Abstract: A sensor device for use in harsh media, comprising a silicon die comprises a lowly doped region, and a contact layer, contacting the silicon die. The contact layer comprises a refractory metal and an ohmic contact to the silicon die via a silicide of the refractory metal. A noble metal layer is provided over the contact layer such that the contact layer is completely covered by the noble metal layer. The noble metal layer comprises palladium, platinum or a metal alloy of palladium and/or platinum. The noble metal layer is patterned to form an interconnect structure and a contact connecting via the contact layer to the ohmic contact. The noble metal layer is adapted for providing a shield to prevent modulation of the lowly doped region by surface charges. The noble metal layer may advantageously protect the contact layer against harsh media in an external environment of the sensor device.

Abstract: A method of manufacturing a sensor device (100) comprises providing (200) a package (102) having a first die-receiving subframe volume (104) separated from a second die-receiving subframe volume (106) by a partition wall (116). An elongate sensor element (120) is disposed (202) within the package (102) so as to bridge the first and second subframe volumes (104, 106) and to overlie the partition wall (116). The elongate sensor element (120) resides substantially in the first subframe volume (104) and partially in the second subframe volume (106). The elongate sensor element (120) is electrically connected within the second subframe volume (106).