Patents by Inventor Apratim Chatterjee

Apratim Chatterjee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power field effect transistor topology and bootstrap circuit for inverting buck-boost DC-DC converter
    Patent number: 11658572
    Abstract: For a buck-boost DC-DC converter with n-type high-side field effect transistor (HSFET), a supply is derived from input and output rails, and this supply maintains a constant differential voltage independent of input supply voltage. The derived supply is used as the high supply (HS) of an HSFET Driver. As such, the HSFET resistance becomes independent of supply variation. A wide range ultra-low IQ (Quiescent current), edge triggered level-shifter provides support to a bootstrapped power stage of the inverting buck-boost DC-DC converter. When p-type HSFET is used, a supply is derived from the input and output supply rails, and this derived supply maintains a constant differential voltage independent to the input supply voltage. The derived supply is used as the low supply (LS) or ‘ground’ of the HSFET Driver. As such, the p-type HSFET resistance becomes independent of supply variation.
    Type: Grant
    Filed: December 16, 2020
    Date of Patent: May 23, 2023
    Assignee: Intel Corporation
    Inventors: Nikunj Gandhi, Gaurav Garg, Apratim Chatterjee, Shobhit Tyagi, Sudhir Polarouthu, Guruvara Nanda Kishore Mutchakarla
  • POWER FIELD EFFECT TRANSISTOR TOPOLOGY AND BOOTSTRAP CIRCUIT FOR INVERTING BUCK-BOOST DC-DC CONVERTER
    Publication number: 20210391795
    Abstract: For a buck-boost DC-DC converter with n-type high-side field effect transistor (HSFET), a supply is derived from input and output rails, and this supply maintains a constant differential voltage independent of input supply voltage. The derived supply is used as the high supply (HS) of an HSFET Driver. As such, the HSFET resistance becomes independent of supply variation. A wide range ultra-low IQ (Quiescent current), edge triggered level-shifter provides support to a bootstrapped power stage of the inverting buck-boost DC-DC converter. When p-type HSFET is used, a supply is derived from the input and output supply rails, and this derived supply maintains a constant differential voltage independent to the input supply voltage. The derived supply is used as the low supply (LS) or ‘ground’ of the HSFET Driver. As such, the p-type HSFET resistance becomes independent of supply variation.
    Type: Application
    Filed: December 16, 2020
    Publication date: December 16, 2021
    Applicant: Intel Corporation
    Inventors: Nikunj Gandhi, Gaurav Garg, Apratim Chatterjee, Shobhit Tyagi, Sudhir Polarouthu, Guruvara Nanda Kishore Mutchakarla