Abstract: Structures having a through-stack thermal sink for dual-sided devices are described. In an example, an integrated circuit structure includes a front side structure. The front side structure includes a device layer having a plurality of fin-based or nanowire-based transistors, and a plurality of metallization layers above the plurality of fin-based or nanowire-based transistors. A backside structure is below the plurality of fin-based or nanowire-based transistors. A carrier wafer or substrate is bonded to the front side structure. A thermal conductive via extends from a location at a bottom of or below the plurality of fin-based or nanowire-based transistors to a location on or into the carrier wafer or substrate.

Abstract: Gate-all-around integrated circuit structures having adjacent island structures are described. For example, an integrated circuit structure includes a semiconductor island on a semiconductor substrate. A first vertical arrangement of horizontal nanowires is above a first fin protruding from the semiconductor substrate. A channel region of the first vertical arrangement of horizontal nanowires is electrically isolated from the fin. A second vertical arrangement of horizontal nanowires is above a second fin protruding from the semiconductor substrate. A channel region of the second vertical arrangement of horizontal nanowires is electrically isolated from the second fin. The semiconductor island is between the first vertical arrangement of horizontal nanowires and the second vertical arrangement of horizontal nanowires.

Abstract: Gate-all-around integrated circuit structures having adjacent island structures are described. For example, an integrated circuit structure includes a semiconductor island on a semiconductor substrate. A first vertical arrangement of horizontal nanowires is above a first fin protruding from the semiconductor substrate. A channel region of the first vertical arrangement of horizontal nanowires is electrically isolated from the fin. A second vertical arrangement of horizontal nanowires is above a second fin protruding from the semiconductor substrate. A channel region of the second vertical arrangement of horizontal nanowires is electrically isolated from the second fin. The semiconductor island is between the first vertical arrangement of horizontal nanowires and the second vertical arrangement of horizontal nanowires.

Abstract: Embodiments disclosed herein include a lithography reticle set and methods of using such reticle sets. In an embodiment, the set comprises a first reticle and a second reticle. In an embodiment, the first reticle comprises a first grating having a first pitch, and a second grating having a second pitch. In an embodiment, the second reticle comprises a third grating having a third pitch, wherein the third pitch is different than the first pitch, and a fourth grating having a fourth pitch, wherein the fourth pitch is different than the first pitch. In an embodiment the third grating overlaps the first grating and the fourth grating overlaps the second grating when two or more edges of the first reticle are aligned with two or more edges of the second reticle. In an embodiment the first reticle or the second reticle further comprises a pattern recognition feature.

Abstract: Gate-all-around integrated circuit structures having adjacent island structures are described. For example, an integrated circuit structure includes a semiconductor island on a semiconductor substrate. A first vertical arrangement of horizontal nanowires is above a first fin protruding from the semiconductor substrate. A channel region of the first vertical arrangement of horizontal nanowires is electrically isolated from the fin. A second vertical arrangement of horizontal nanowires is above a second fin protruding from the semiconductor substrate. A channel region of the second vertical arrangement of horizontal nanowires is electrically isolated from the second fin. The semiconductor island is between the first vertical arrangement of horizontal nanowires and the second vertical arrangement of horizontal nanowires.

Abstract: An apparatus and methods for characterizing the response of a particle to a parameter that characterizes an environment of the particle. A change is induced in the parameter characterizing the environment of the particle, where the change is rapid on a timescale characterizing kinetic response of the particle. The response of the particle is then imaged at a plurality of instants over the course of a period of time shorter than the timescale characterizing the kinetic response of the particle. The response may be detected by measuring a temperature jump or by measuring correlation and anticorrelation between probe parameters across pixels. More particularly, the particle may be a molecule, such as a biomolecule, and the environment, more particularly, may be a biological cell. The parameter characterizing the environment of the particle may be a temperature, and change may be induced in the temperature by heating a volume that includes the particle, either conductively or radiatively.

Abstract: An apparatus and methods for characterizing the response of a particle to a parameter that characterizes an environment of the particle. A change is induced in the parameter characterizing the environment of the particle, where the change is rapid on a timescale characterizing kinetic response of the particle. The response of the particle is then imaged at a plurality of instants over the course of a period of time shorter than the timescale characterizing the kinetic response of the particle. The response may be detected by measuring a temperature jump or by measuring correlation and anticorrelation between probe parameters across pixels. More particularly, the particle may be a molecule, such as a biomolecule, and the environment, more particularly, may be a biological cell. The parameter characterizing the environment of the particle may be a temperature, and change may be induced in the temperature by heating a volume that includes the particle, either conductively or radiatively.