Abstract: Ionized physical vapor deposition (IPVD) is used to form a magnetic recording disk drive write head main pole with thin side gap layers and a thicker leading gap layer. A metal or metal alloy is formed by IPVD in a trench with a bottom and outwardly sloping sidewalls. An optional Ru seed layer is deposited on the metal or metal alloy. This is followed by atomic layer deposition (ALD) of a Ru smoothing layer. If the IPVD results in metal or metal alloy side gap layers with a rough surface, the ALD process is modified, resulting in a smooth Ru smoothing layer that does not replicate the rough surface of the side gap layers.

Abstract: Ionized physical vapor deposition (IPVD) is used to form a magnetic recording disk drive write head main pole with thin side gap layers and a thicker leading gap layer. A metal or metal alloy is formed by IPVD in a trench with a bottom and outwardly sloping sidewalls. An optional Ru seed layer is deposited on the metal or metal alloy. This is followed by atomic layer deposition (ALD) of a Ru smoothing layer. If the IPVD results in metal or metal alloy side gap layers with a rough surface, the ALD process is modified, resulting in a smooth Ru smoothing layer that does not replicate the rough surface of the side gap layers.

Abstract: Method of plating using a polymeric barrier layer including a polyphenolic polymer which has a repeating unit of the formula: wherein R1, R2, R3, R4, and R5 are individually hydrogen, a hydroxy group or an azo dye.

Abstract: A method for fabricating a non-electroplated shield using combination patterning and devices formed thereby are disclosed. The method includes depositing a metal layer, such as CZT, removing substantially 75% of the metal layer during a first phase using at least a first removal process and removing a remaining portion of the metal layer during a second phase using at least a second removal process. The first removal process may include depositing a first patterning layer, removing substantially 75% of the metal layer by ion-mill or similar technology and stripping the first patterning layer away. The second removal process may include depositing a second patterning layer and removing the remaining portion of the metal layer using a wet-etch or other etch process and removing the second patterning layer. The deposited metal layer may have a thickness up to several ?m and the edges of the shield exhibit a unique step pattern that is visible in a cross-section view of the shield.