Abstract: Embodiments of the invention include a light emitting device including a substrate and a semiconductor structure including a light emitting layer. A first reflective layer surrounds the light emitting device. A wavelength converting element is disposed over the light emitting device. A second reflective layer is disposed adjacent a first sidewall of the wavelength converting element.

Abstract: Silicone-containing adhesive layer formed by cyclic ring-opening polymerization and comprising amounts of an organic base and bonding a wavelength converting layer to a thickness of sapphire in a light-emitting diode (LED) apparatus. Methods enabling its uninhibited curing so as to achieve contaminant-free and debris-free adhesion between surfaces. LED apparatus designed and manufactured such that surfaces to be bonded together are prepared in a manner that facilitates use of high-refractive-index adhesives. A multi-step process involving two different concentrations of a catalyst is performed so as to fabricate highly-reliable, non-browning, and non-cracking high-refractive-index adhesives for light-emitting diode component fabrication.

Abstract: Embodiments of the invention include a light emitting device including a substrate and a semiconductor structure including a light emitting layer. A first reflective layer surrounds the light emitting device. A wavelength converting element is disposed over the light emitting device. A second reflective layer is disposed adjacent a first sidewall of the wavelength converting element.

Abstract: In embodiments of the invention, a light emitting device includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A first wavelength converting layer is disposed in a path of light emitted by the light emitting layer. The first wavelength converting layer may be a wavelength converting ceramic. A second wavelength converting layer is fused to the first wavelength converting layer. The second wavelength converting layer may be a wavelength converting material disposed in glass.

Abstract: Embodiments of the invention include a light emitting device including a substrate and a semiconductor structure including a light emitting layer. A first reflective layer surrounds the light emitting device. A wavelength converting element is disposed over the light emitting device. A second reflective layer is disposed adjacent a first sidewall of the wavelength converting element.

Abstract: A ceramic green wavelength conversion element (120) is coated with a red wavelength conversion material (330) and placed above a blue light emitting element (110) such that the ceramic element (120) is attached to the light emitting element (110), thereby providing an efficient thermal coupling from the red and green converters (330, 120) to the light emitting element (110) and its associated heat sink. To protect the red converter coating (330) from the effects of subsequent processes, a sacrificial clear coating (340) is created above the red converter element (330). This clear coating (340) may be provided as a discrete layer of clear material, or it may be produced by allowing the red converters to settle to the bottom of its suspension material, thereby forming a converter-free upper layer that can be subjected to the subsequent fabrication processes.

Abstract: A device according to embodiments of the invention includes a first semiconductor light emitting layer disposed between a first n-type region and a first p-type region. A second semiconductor light emitting layer disposed between a second n-type region and a second p-type region is disposed over the first semiconductor light emitting layer. A non-III-nitride material separates the first and second light emitting layers.

Abstract: Silicone-containing adhesive layer formed by cyclic ring-opening polymerization and comprising amounts of an organic base and bonding a wavelength converting layer to a thickness of sapphire in a light-emitting diode (LED) apparatus. Methods enabling its uninhibited curing so as to achieve contaminant-free and debris-free adhesion between surfaces. LED apparatus designed and manufactured such that surfaces to be bonded together are prepared in a manner that facilitates use of high-refractive-index adhesives. A multi-step process involving two different concentrations of a catalyst is performed so as to fabricate highly-reliable, non-browning, and non-cracking high-refractive-index adhesives for light-emitting diode component fabrication.

Abstract: A method according to embodiments of the invention includes providing a plurality of LEDs attached to a mount. A filter is attached to at least one of the plurality of LEDs. A protective layer is formed over the filter. A reflective layer is formed over the mount. A portion of the reflective layer disposed over the protective layer is removed.

Abstract: A device according to embodiments of the invention includes a first semiconductor light emitting layer disposed between a first n-type region and a first p-type region. A second semiconductor light emitting layer disposed between a second n-type region and a second p-type region is disposed over the first semiconductor light emitting layer. A non-III-nitride material separates the first and second light emitting layers.

Abstract: In embodiments of the invention, a light emitting device includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A first wavelength converting layer is disposed in a path of light emitted by the light emitting layer. The first wavelength converting layer may be a wavelength converting ceramic. A second wavelength converting layer is fused to the first wavelength converting layer. The second wavelength converting layer may be a wavelength converting material disposed in glass.

Abstract: A method according to embodiments of the invention includes disposing a support layer on a surface of a wavelength converting ceramic wafer. The wavelength converting ceramic wafer and the support layer are diced to form wavelength converting members. A wavelength converting member is attached to a light emitting device. After attaching the wavelength converting member to the light emitting device, the support layer is removed.

Abstract: In embodiments of the invention, a light emitting device includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A first wavelength converting layer is disposed in a path of light emitted by the light emitting layer. The first wavelength converting layer may be a wavelength converting ceramic. A second wavelength converting layer is fused to the first wavelength converting layer. The second wavelength converting layer may be a wavelength converting material disposed in glass.

Abstract: A method according to embodiments of the invention includes disposing a support layer (32) on a surface of a wavelength converting ceramic wafer (30). The wavelength converting ceramic wafer and the support layer are diced (42) to form wavelength converting members. A wavelength converting member is attached to a light emitting device. After attaching the wavelength converting member to the light emitting device, the support layer is removed.

Abstract: A method according to embodiments of the invention includes disposing a support layer (32) on a surface of a wavelength converting ceramic wafer (30). The wavelength converting ceramic wafer and the support layer are diced (42) to form wavelength converting members. A wavelength converting member is attached to a light emitting device. After attaching the wavelength converting member to the light emitting device, the support layer is removed.

Abstract: A method according to embodiments of the invention includes providing a plurality of LEDs (60) attached to a mount (62). A filter (102) is attached to at least one of the plurality of LEDs. A protective layer (104) is formed over the filter. A reflective layer (74) is formed over the mount. A portion of the reflective layer disposed over the protective layer is removed.

Abstract: Embodiments of the invention include a light emitting device including a substrate and a semiconductor structure including a light emitting layer. A first reflective layer surrounds the light emitting device. A wavelength converting element is disposed over the light emitting device. A second reflective layer is disposed adjacent a first sidewall of the wavelength converting element.

Abstract: A composition of electrically conductive composites for temperature sensing comprises conductive particles. The composite forms from a suspension. The suspension comprises the particles and solvent, and the particles are conductive particles with aspect ratio larger than one. The conductive composite retains a negative temperature coefficient when in contact with certain specific surfaces. The particles within the composite self align.

Abstract: A method according to embodiments of the invention includes providing a plurality of LEDs attached to a mount. A filter is attached to at least one of the plurality of LEDs. A protective layer is formed over the filter. A reflective layer is formed over the mount. A portion of the reflective layer disposed over the protective layer is removed.

Abstract: A ceramic green wavelength conversion element (120) is coated with a red wavelength conversion material (330) and placed above a blue light emitting element (110) such that the ceramic element (120) is attached to the light emitting element (110), thereby providing an efficient thermal coupling from the red and green converters (330, 120) to the light emitting element (110) and its associated heat sink. To protect the red converter coating (330) from the effects of subsequent processes, a sacrificial clear coating (340) is created above the red converter element (330). This clear coating (340) may be provided as a discrete layer of clear material, or it may be produced by allowing the red converters to settle to the bottom of its suspension material, thereby forming a converter-free upper layer that can be subjected to the subsequent fabrication processes.