Patents by Inventor Apurva D. Chaudhari
Apurva D. Chaudhari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8358005Abstract: The invention provides semiconductor material (e.g., gallium nitride material) devices (e.g., transistors) and methods associated with the same. The devices may be supported within a package that is formed, in part, of a polymeric material. In other embodiments, the devices may be mounted to a support (e.g., circuit board) and a polymeric material may encapsulate a portion of the device extending from the support.Type: GrantFiled: June 4, 2008Date of Patent: January 22, 2013Assignee: International Rectifier CorporationInventors: Isik C. Kizilyalli, Robert J. Therrien, David M. Boulin, Apurva D. Chaudhari
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Patent number: 7994540Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: GrantFiled: July 24, 2009Date of Patent: August 9, 2011Assignee: International Rectifier CorporationInventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Jr., Allen W. Hanson, Jerry W. Johnson, Kevin J. Linthicum, Edwin L. Piner, Pradeep Rajagopal, John C. Roberts, Sameer Singhal, Robert J. Therrien, Andrei Vescan
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Publication number: 20100019850Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: ApplicationFiled: July 24, 2009Publication date: January 28, 2010Applicant: Nitronex CorporationInventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, JR., Allen W. Hanson, Jerry W. Johnson, Kevin J. Linthicum, Edwin L. Piner, Pradeep Rajagopal, John C. Roberts, Sameer Singhal, Robert J. Therrien, Andrei Vescan
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Patent number: 7569871Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: GrantFiled: March 31, 2008Date of Patent: August 4, 2009Assignee: Nitronex CorporationInventors: Walter H. Nagy, Jerry Wayne Johnson, Edwin Lanier Piner, Pradeep Rajagopal, John Claassen Roberts, Sameer Singhal, Robert Joseph Therrien, Andrei Vescan, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Allen W. Hanson, Kevin J. Linthicum
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Publication number: 20090109646Abstract: The invention provides semiconductor material (e.g., gallium nitride material) devices (e.g., transistors) and methods associated with the same. The devices may be supported within a package that is formed, in part, of a polymeric material. In other embodiments, the devices may be mounted to a support (e.g., circuit board) and a polymeric material may encapsulate a portion of the device extending from the support.Type: ApplicationFiled: June 4, 2008Publication date: April 30, 2009Applicant: Nitronex CorporationInventors: Isik C. Kizilyalli, Robert J. Therrien, David M. Boulin, Apurva D. Chaudhari
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Publication number: 20080246058Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: ApplicationFiled: March 31, 2008Publication date: October 9, 2008Applicant: Nitronex CorporationInventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Allen W. Hanson, Jerry W. Johnson, Kevin J. Linthicum, Edwin L. Piner, Pradeep Rajagopal, John C. Roberts, Sameer Singhal, Robert J. Therrien, Andrei Vescan
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Patent number: 7352016Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: GrantFiled: November 13, 2006Date of Patent: April 1, 2008Assignee: Nitronex CorporationInventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Allen W. Hanson, Jerry Wayne Johnson, Kevin J. Linthicum, Edwin Lanier Piner, Pradeep Rajagopal, John Claassen Roberts, Sameer Singhal, Robert Joseph Therrien, Andrei Vescan
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Patent number: 7135720Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: GrantFiled: August 5, 2004Date of Patent: November 14, 2006Assignee: Nitronex CorporationInventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Jr., Allen W. Hanson, Jerry W. Johnson, Kevin J. Linthicum, Edwin L. Piner, Pradeep Rajagopal, John C. Roberts, Sameer Singhal, Robert J. Therrien, Andrei Vescan