Abstract: Provided are a display panel, and an electronic device including display panel. The display panel includes: a substrate; a plurality of light emitting elements disposed on the substrate, each of the plurality of light emitting elements including a semiconductor light emitting chip; a plurality of micro lenses disposed on the light emitting elements, respectively, each of the micro lenses surrounding each of the light emitting elements; and a plurality of color conversion layers disposed on or under the plurality of micro lenses, respectively, each of the color conversion layers having a shape corresponding to each of the plurality of micro lenses.

Abstract: A display panel, a method of manufacturing the same, and an electronic device including the display panel. The display panel includes a light emitting device array including a plurality of light emitting devices, a color conversion layer disposed on the light emitting device array and converting the emission spectrum of light emitted from the light emitting device array, and an encapsulation film on the color conversion layer, wherein the color conversion layer includes a quantum dot-polymer pattern including a quantum dot-polymer composite, an average roughness (Ra) of an upper surface of the quantum dot-polymer pattern is less than or equal to about 3% of a thickness of the encapsulation film.

Abstract: A quantum dot composite configured to emit green light or red light. The quantum dot composite including a polymer matrix, and a plurality of quantum dots dispersed in the polymer matrix, the plurality of quantum dots include a semiconductor nanocrystal core comprising indium and phosphorus. As determined by differential scanning calorimetry, the quantum dot composite exhibits an intensity of a peak between about 350° C. to about 450° C. that is about 8 times or more and about 13 times or less relative to an intensity of a peak between about 200° C. and about 300° C. in a thermogravimetric analysis graph.

Abstract: The present disclosure provides a display panel including: a substrate; a plurality of light emitting elements including semiconductor light emitting chips and disposed on the substrate; a plurality of color conversion layers overlapped with the plurality of light emitting elements and disposed thereon, respectively; and a plurality of absorption-type color filter layers directly disposed and having a surface shape of the plurality of color conversion layers, respectively, where a pitch between adjacent light emitting elements of the plurality of light emitting elements is less than or equal to about 100 micrometers, and at least one of the plurality of color conversion layers includes quantum dots.

Abstract: A semiconductor nanoparticle, a method for manufacturing the semiconductor nanoparticle, an ink composition including the semiconductor nanoparticle, a semiconductor nanoparticle composite including the semiconductor nanoparticle, a display device including the semiconductor nanoparticle, and an electronic device including the semiconductor nanoparticle are provided. In the semiconductor nanoparticle, a mole ratio (Ga/In) of gallium to indium is greater than or equal to about 20:1 and less than or equal to about 40:1, and the semiconductor nanoparticle has a quantum yield of greater than or equal to about 70% and less than or equal to about 100%.

Abstract: A color conversion panel includes a color conversion layer including a color conversion region, and optionally, a partition wall defining the region of the color conversion layer. The color conversion region includes a first region corresponding to a green pixel, and the first region includes a first composite that is configured to emit a green light and includes a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide, the Group III-V compound includes indium, phosphorus, and optionally zinc, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures do not include cadmium. and at least a portion of surfaces of the luminescent nanostructures includes the second semiconductor nanocrystal.

Abstract: A quantum dot, a quantum dot composite including the quantum dot, a composition for preparing the quantum dot composite, a display panel including the quantum dot composite, and an electronic apparatus including the display panel. The quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, the semiconductor nanocrystal core having an emission peak wavelength from about 600 nm to about 650 nm, or an emission peak wavelength from about 500 nm to about 550 nm, and an area of a peak from about 400° C. to about 500° C. is 0.17 times to 0.5 times relative to an area of a peak from about 200° C. to about 300° C. in a thermogravimetric analysis (TGA) graph as determined with a differential scanning calorimeter (DSC).

Abstract: A display panel and an electronic device including the display panel are provided, where the display panel includes a quantum dot composite including a matrix and a plurality of quantum dots and titanium dioxide (TiO2) particles dispersed in the matrix, the plurality of quantum dots include silver and gallium, exhibit an emission peak wavelength of from about 500 nm to about 550 nm, and a full width at half maximum of the emission peak is greater than or equal to about 10 nm and less than or equal to about 50 nm, and where the quantum dot composite has a mole ratio of silver to titanium of greater than or equal to about 0.4:1 and less than or equal to about 15:1, and a mole ratio of gallium to titanium of greater than or equal to about 0.4:1 and less than or equal to about 20:1.

Abstract: Provided are an optical display device module and an optical display device including same, the optical display device module comprising an optical display device panel, and a first polarizing plate arranged on at least one surface of the optical display device panel, wherein the first polarizing plate includes a first polarizer and a first phase difference layer arranged between the first polarizer and the optical display device panel, the first phase difference layer includes at least a positive C layer, the optical display device panel includes a second phase difference layer therein, and the second phase difference layer and the first phase difference layer satisfy formula 1 and formula 2.

Abstract: The present disclosure relates to a battery assembly comprising: a case; a cell stack in which a plurality of battery cells are stacked and accommodated inside the case; and a heat dissipation pad disposed between the cell stack and the case and comprising a metal foam layer and at least one insulating layer.

Abstract: An optical laminate and an optical display apparatus including the same are provided. An optical laminate includes: a polarizer; and a first protective layer and a retardation layer stacked on a light incidence surface of the polarizer, the retardation layer including at least a positive C layer, and a laminate of the first protective layer and the retardation layer having a photoelastic coefficient of about 2×10?13 cm2/dyne or less and a modulus of about 2,000 MPa to about 4,000 MPa, as measured in an absorption axis direction of the polarizer in the optical laminate.

Abstract: A semiconductor nanoparticle, a method of producing the semiconductor nanoparticle, and an electronic device including the semiconductor nanoparticle. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, with a molar ratio of gallium to indium (Ga/In) of greater than or equal to about 0.8:1 and less than or equal to about 20:1. The semiconductor nanoparticle is substantially free of copper and is configured to emit red light. The emission peak wavelength of the red light is greater than or equal to about 600 nm and less than or equal to about 650 nm, with a full width at half maximum (FWHM) of greater than or equal to about 5 nm and less than or equal to about 90 nm.

Abstract: A semiconductor nanoparticle, a method of manufacturing the semiconductor nanoparticle, and an electronic device including the nanoparticle are provided. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, wherein the semiconductor nanoparticle is configured to emit a green light, wherein the semiconductor nanoparticle has a relative mole value of zinc as defined by Equation 1 that is greater than or equal to about 0.25 and less than or equal to about 0.9: Relative ? mole ? value ? of ? zinc = [ Zn ] / ( [ Ag ] + [ In ] + [ Ga ] + [ Zn ] ) Equation ? 1 wherein, in Equation 1, [Ag], [In], [Ga], and [Zn] are molar amounts of the silver, the indium, the gallium, and the zinc in the semiconductor nanoparticle, respectively, and wherein a mole ratio of gallium to indium is greater than about 2.5:1 and less than about 5.6:1.

Abstract: A semiconductor nanoparticle including a first semiconductor nanocrystal including silver, indium, gallium, and sulfur, and a semiconductor nanoparticle including a second semiconductor nanocrystal including zinc, gallium, and sulfur, a method of manufacturing the same, and an electronic device including the same. The semiconductor nanoparticle is configured to emit a green light. The green light has a peak emission wavelength of about 500 nanometers to about 580 nanometers. In the semiconductor nanoparticle, a molar ratio of zinc to indium is about 0.1:1 to about 10:1.

Abstract: A color conversion panel that includes a color conversion layer including two or more color conversion regions, and optionally, a partition wall defining the regions of the color conversion layer, and a display device including the color conversion panel. The color conversion region includes a first region corresponding to a first pixel, and the first region includes a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide. The Group III-V compound includes indium, phosphorus, and optionally, zinc or gallium, or zinc and gallium, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures further include aluminum and chlorine, and a mole ratio of aluminum to sulfur (Al:S) is less than about 0.

Abstract: A touch sensor includes a base layer, a first electrode unit, second electrode units, and a first strain gauge. The first electrode unit includes first touch electrodes arranged on the base layer along a first direction and electrically connected to each other along the first direction. The second electrode units are spaced apart from one another along the first direction. Each of the second electrode units includes second touch electrodes arranged on the base layer along a second direction intersecting the first direction and electrically connected to each other along the second direction. Each of the second touch electrodes includes a first opening. The first strain gauge includes first resistance lines electrically connected to each other along the first direction. Each of the first resistance lines is disposed in a respective first opening disposed in a first row among the first openings.

Abstract: A touch sensor includes first touch electrode members disposed on a base layer and located in a sensing area, each of the first touch electrode members including a plurality of first touch electrodes arranged along a first direction, each of the first touch electrodes including a first opening; second touch electrode members disposed on the base layer and located in a sensing area, each of the second touch electrode members including second touch electrodes arranged along a second direction, each of the second touch electrodes including a second opening; and a first pressure sensor disposed on the base layer and including a first strain gauge. A portion of the first strain gauge is located in the second sensing area, and the first strain gauge includes a portion located in the second sensing area and disposed in the same layer as the first touch electrodes and the second touch electrodes.

Abstract: A polarizing plate and an optical display apparatus are disclosed. A polarizing plate includes a polarizer and a protective film stacked on a light exit surface of the polarizer, and the protective film includes a polyester based base layer and an antiglare layer stacked on a surface of the polyester based base layer, and the protective film has an in-plane retardation of 100 nm to 4,000 nm at a wavelength of 550 nm, a total haze of 40% to 80%, and a ratio of internal haze to external haze of greater than 0 to 0.2.

Abstract: A polarizing plate and an optical display apparatus including the same are disclosed. A polarizing plate includes: a polarizer; and a protective layer on at least one surface of the polarizer, and the polarizer includes a polyvinyl alcohol based film containing a dichroic material and contains a zinc cation and a sodium cation, and a ratio of the sodium cation to the zinc cation is in a range from 0.1 to 0.96, and a total content of the zinc cation and the sodium cation is in a range from 500 ppm to 1,500 ppm.

Abstract: A display device includes: a base substrate; a light emitting element located on the base substrate; a thin-film encapsulation layer located on the light emitting element; touch electrodes located on the thin-film encapsulation layer, each of the touch electrode including an opening; and a strain gauge including: resistance lines located in the openings, respectively, the resistance lines located in the same layer as the touch electrodes and having variable resistance values changed in response to a touch input; a first connection line connecting two resistance lines neighboring each other along a first direction; and a second connection line connecting two resistance lines neighboring each other along a second direction, the second direction intersecting the first direction, wherein the first connection line and the second connection line are located between the thin-film encapsulation layer and the resistance lines.