Abstract: An oxide thin film transistor (TFT) includes an oxide semiconductor layer including a first semiconductor layer and a second semiconductor layer on the first semiconductor layer; a gate insulating layer on the oxide semiconductor layer; a gate electrode on the gate insulating layer; an interlayer insulating layer on the gate electrode; and a source electrode and a drain electrode on the interlayer insulating layer and contacting the oxide semiconductor layer, wherein a first reflectance of the first semiconductor layer is greater than a second semiconductor layer.

Abstract: An array substrate including: a gate barrier layer on a substrate; a gate line on the gate barrier layer, the gate line having a gate open portion exposing the gate barrier layer in a gate electrode region; a gate insulating layer on the gate line; an active layer on the gate insulating layer over the gate barrier layer in the gate electrode region; and source and drain electrodes spaced apart from each other on the active layer.

Abstract: An oxide thin film transistor (TFT) includes an oxide semiconductor layer including a first semiconductor layer and a second semiconductor layer on the first semiconductor layer; a gate insulating layer on the oxide semiconductor layer; a gate electrode on the gate insulating layer; an interlayer insulating layer on the gate electrode; and a source electrode and a drain electrode on the interlayer insulating layer and contacting the oxide semiconductor layer, wherein a first reflectance of the first semiconductor layer is greater than a second semiconductor layer.

Abstract: An array substrate including: a gate barrier layer on a substrate; a gate line on the gate barrier layer, the gate line having a gate open portion exposing the gate barrier layer in a gate electrode region; a gate insulating layer on the gate line; an active layer on the gate insulating layer over the gate barrier layer in the gate electrode region; and source and drain electrodes spaced apart from each other on the active layer.

Abstract: A method of manufacturing a thin-film bonded substrate used for semiconductor devices. The method includes the steps of epitaxially growing an epitaxial growth layer on a first substrate of a bulk crystal, cleaving the first substrate, thereby leaving a crystal thin film on the epitaxial growth layer, the crystal thin film being separated out of the first substrate, and bonding a second substrate to the crystal thin film, the chemical composition of the second substrate being different from the chemical composition of the first substrate. It is possible to preclude a conductive barrier layer of the related art, prevent a reflective layer from malfunctioning due to high-temperature processing, and essentially prevent cracks due to the difference in the coefficients of thermal expansion between heterogeneous materials that are bonded to each other.

Abstract: A thermochromic substrate and a pair-glass with a thermochromic thin film, which increases the efficiency with which solar energy is transmitted and blocked. The thermochromic substrate includes a base substrate, a thermochromic thin film coating the base substrate, and a high-refractivity thin film coating the thermochromic thin film. The high-refractivity thin film shifts the reference wavelength in the infrared range, at which the variance in the transmittance due to the phase transition does not exceed 0, to a shorter wavelength. The efficiency with which solar energy is transmitted and blocked is increased, thereby decreasing the load of cooling and heating a building.