Abstract: Devices, systems, and methods for characterizing material samples. In one aspect, a device for characterizing a sample includes a substrate configured for receiving a sample thereon; an optical fiber probe comprising a first end positioned near the sample and a second end that is bifurcated to include one or more first fiber configured for connection to a first light emitting device and one or more second fiber configured for connection to a spectrometer; a reflectance module coupled to the substrate; and a second light emitting device positioned near the sample. The optical fiber probe is configured for selectively obtaining at the spectrometer both a reflectance absorbance measurement of the sample associated with the first light emitting device and a photoluminescence measurement of the sample associated with the second light emitting device.

Abstract: Spin coating systems and methods. In one aspect, a spin coater assembly is provided. The spin coater assembly includes a spinner configured for receiving a substrate thereon, a plurality of material dispensers, an arm assembly configured to selectively position one of the plurality of material dispensers over the substrate, and a controller in communication with each of the spinner, the plurality of material dispensers, and the arm assembly.

Abstract: The present subject matter relates to systems and methods for the formulation of inks from stock solutions in which a liquid handler is configured to draw samples from a plurality of solution components and mix the components together to create one or more ink formulations, and a dispensing robot is configured to transfer the one or more ink formulations to a common substrate to form one or more material samples or a coating element in communication with the liquid handler is configured to transfer the one or more ink formulations to a common substrate to form one or more material samples. A controller in communication with each of the liquid handler and the dispensing robot can be configured to coordinate the creation and transfer of the one or more ink formulations. In addition, the one or more material samples can be analyzed using one or more characterization instrument configured to characterize the material samples on the common substrate.

Abstract: Embodiments of the present disclosure describe a method of fabricating a semiconducting material, comprising fixing a first substrate to a second substrate via a bonding material sufficient to form a two-substrate support with a cavity region, applying an organo-lead halide perovskite precursor solution to the cavity region of the two-substrate support, and annealing sufficient to form in the cavity region a semiconducting material including an organo-lead halide perovskite thin single crystal. Embodiments of the present disclosure further describe a transistor comprising a source terminal, a drain terminal, a channel layer extending between the source terminal and the drain terminal and including an organo-lead halide perovskite thin single crystal, a gate terminal, and an insulating layer separating the gate terminal from the source terminal, drain terminal, and channel layer sufficient to form a transistor.

Abstract: A method of manufacturing a patterned crystal structure for includes depositing an amorphous material. The amorphous material is modified such that a first portion of the amorphous thin-film layer has a first height/volume and a second portion of the amorphous thin-film layer has a second height/volume greater than the first portion. The amorphous material is annealed to induce crystallization, wherein crystallization is induced in the second portion first due to the greater height/volume of the second portion relative to the first portion to form patterned crystal structures.

Abstract: Embodiments of the present disclosure provide materials, devices and systems including a composite of halide perovskite single crystals and nanotubes, and the like. Embodiments of the composite can be used in devices such as detectors, solar panels, transistors, sensors, and the like.

Abstract: Embodiments of the present disclosure describe a method of fabricating a semiconducting material, comprising fixing a first substrate to a second substrate via a bonding material sufficient to form a two-substrate support with a cavity region, applying an organo-lead halide perovskite precursor solution to the cavity region of the two-substrate support, and annealing sufficient to form in the cavity region a semiconducting material including an organo-lead halide perovskite thin single crystal. Embodiments of the present disclosure further describe a transistor comprising a source terminal, a drain terminal, a channel layer extending between the source terminal and the drain terminal and including an organo-lead halide perovskite thin single crystal, a gate terminal, and an insulating layer separating the gate terminal from the source terminal, drain terminal, and channel layer sufficient to form a transistor.

Abstract: Embodiments provide methods for controlling crystallization of fullerene compounds in mixed films comprising one or more polymers. Methods can include depositing fullerene mixed films comprising one or more polymers on crystalline fullerene substrates and annealing the deposited mixed films. Methods can further include one or more of exposing the annealed mixed film to UV light, and washing the annealed mixed film with a solvent. Fullerene compounds can include one or more of PCBM, PCBNB, and PCBA.

Abstract: A method of manufacturing a patterned crystal structure for includes depositing an amorphous material. The amorphous material is modified such that a first portion of the amorphous thin-film layer has a first height/volume and a second portion of the amorphous thin-film layer has a second height/volume greater than the first portion. The amorphous material is annealed to induce crystallization, wherein crystallization is induced in the second portion first due to the greater height/volume of the second portion relative to the first portion to form patterned crystal structures.