Patents by Inventor Arash Daghighi

Arash Daghighi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Double insulating silicon on diamond device
    Patent number: 9077588
    Abstract: A silicon-on-diamond (SOD) transistor includes a silicon-based substrate, a diamond insulating layer over the silicon-based substrate, a silicon-based insulating layer directly over and in contact with the diamond insulating layer, a body over the silicon-based insulating layer, and a gate over the body. The structure of the SOD transistor provides improved drain induced barrier lowering (DIBL) in fully-depleted SOD transistors by using a second, silicon-based insulating layer.
    Type: Grant
    Filed: July 31, 2010
    Date of Patent: July 7, 2015
    Inventor: Arash Daghighi
  • Method for improving the radio frequency linearity of silicon-on-insulator MOSFET circuits
    Patent number: 8375341
    Abstract: A method for improving the radio frequency linearity of SOI MOSFET circuits is disclosed. In particular, a method for determining output conductance transition-free body resistances (“Rbody”) for SOI MOSFETs used in SOI MOSFET circuits to eliminate their output conductance transition in the radio frequency range is disclosed. The Rbody of the SOI MOSFETs can be adjusted by changing the number of fingers, i.e., gates, in an SOI MOSFET and/or varying other layout parameters, such as finger width. The transition-free SOI MOSFETs result in improved linearity of mixed-signal, radio-frequency, analog integrated circuits, where body-contacted SOI MOSFETs are preferred because a high degree of device matching is required.
    Type: Grant
    Filed: May 12, 2012
    Date of Patent: February 12, 2013
    Inventors: Arash Daghighi, Neda Pourdavoud Ganjabadi
  • METHOD FOR IMPROVING THE RADIO FREQUENCY LINEARITY OF SILICON-ON-INSULATOR MOSFET CIRCUITS
    Publication number: 20120233579
    Abstract: A method for improving the radio frequency linearity of SOI MOSFET circuits is disclosed. In particular, a method for determining output conductance transition-free body resistances (“Rbody”) for SOI MOSFETs used in SOI MOSFET circuits to eliminate their output conductance transition in the radio frequency range is disclosed. The Rbody of the SOI MOSFETs can be adjusted by changing the number of fingers, i.e., gates, in an SOI MOSFET and/or varying other layout parameters, such as finger width. The transition-free SOI MOSFETs result in improved linearity of mixed-signal, radio-frequency, analog integrated circuits, where body-contacted SOI MOSFETs are preferred because a high degree of device matching is required.
    Type: Application
    Filed: May 12, 2012
    Publication date: September 13, 2012
    Inventors: Arash Daghighi, Neda Pourdavoud
  • DOUBLE INSULATING SILICON ON DIAMOND DEVICE
    Publication number: 20100295128
    Abstract: A silicon-on-diamond (SOD) transistor includes a silicon-based substrate, a diamond insulating layer over the silicon-based substrate, a silicon-based insulating layer directly over and in contact with the diamond insulating layer, a body over the silicon-based insulating layer, and a gate over the body. The structure of the SOD transistor provides improved drain induced barrier lowering (DIBL) in fully-depleted SOD transistors by using a second, silicon-based insulating layer.
    Type: Application
    Filed: July 31, 2010
    Publication date: November 25, 2010
    Inventor: Arash Daghighi