Abstract: The present invention provides a semiconductor device and manufacturing method of the semiconductor device which can prevent breaks in an interlayer insulation film (12) and electrode (13) that arise with bonding while maintaining bonding strength. A semiconductor element (1) mounted on a semiconductor device including an interlayer insulation film (12) which has an aperture part (123) having an opening shape which is defined by an extension part (121) which covers the gate electrode (116) and extends in the first direction, a connection part (122), the extension part (121) and the connection part (122) which connects at fixed intervals in the first direction a pair of extension parts (121) which are adjacent to the second direction, and which exposes a main surface of a base region (112) and a main surface of an emitter region (113).

Abstract: The present invention provides a semiconductor device and manufacturing method of the semiconductor device which can prevent breaks in an interlayer insulation film (12) and electrode (13) that arise with bonding while maintaining bonding strength. A semiconductor element (1) mounted on a semiconductor device including an interlayer insulation film (12) which has an aperture part (123) having an opening shape which is defined by an extension part (121) which covers the gate electrode (116) and extends in the first direction, a connection part (122), the extension part (121) and the connection part (122) which connects at fixed intervals in the first direction a pair of extension parts (121) which are adjacent to the second direction, and which exposes a main surface of a base region (112) and a main surface of an emitter region (113).

Abstract: A plastic-encapsulated semiconductor device is provided which comprises a plastic-encapsulant 4 formed with notches 14 for exposing outside an upper electrode 12a on a semiconducting element 2 and an inner end 13 of a lead terminal 3a, and a radiator 5 formed with a main radiator body 15 mounted on an upper surface 4a of plastic-encapsulant 4, and connections 16 in notches 14 for electrically connecting upper electrode 12a of semiconducting element 2 with lead terminal 3a through main radiator body 15. Alteration in shape of main radiator body 15 allows appropriate change in thermal volume of radiator 5 by adopting radiator 5 of different shape or size. Also, connections 16 may provide a current path to lead terminal 3a in an existing lead frame without need of change in shape of outer leads 3.