Abstract: A compute-memory circuit included in a computer system includes multiple data storage cells and multiplier circuits. The data storage cells store weight values associated with a first operand. The multiplier circuits are coupled to a global bit line and receive the weight values via local bit lines coupled to the data storage cells. Using the received weight values and activation signals indicative of a second operand, the multiplier circuits modify a voltage level of the global bit line. The resultant voltage level on the global bit line is indicative of a product of the first and second operands, and can be converted to a digital value using an analog-to-digital converter circuit.

Abstract: A compute-memory circuit included in a computer system includes multiple data storage cells and multiplier circuits. The data storage cells store weight values associated with a first operand. The multiplier circuits are coupled to a global bit line and receive the weight values via local bit lines coupled to the data storage cells. Using the received weight values and activation signals indicative of a second operand, the multiplier circuits modify a voltage level of global bit line. The resultant voltage level on the global bit line is indicative of a product of the first and second operands, and can be converted to a digital value using an analog-to-digital converter circuit. By performing computation on global rather than local bit lines, standard data storage cells can be employed, improving the area efficiency of the compute-memory circuit.

Abstract: Embodiments that may allow for selectively tuning a delay of individual write paths within a memory are disclosed. The memory may comprise a memory array, a first data latch, a second data latch, and circuitry. The first and second data latches may be configured to each sample a respective data value, responsive to detecting a first edge of a first clock signal. The circuitry may be configured to detect the first edge of the first clock signal, and select an output of the first data latch responsive to detecting the first edge of the first clock signal. The circuitry may detect a subsequent opposite edge of the first clock signal, and select an output of the second data latch responsive to sampling the opposite edge of the first clock signal.

Abstract: Embodiments that may allow for selectively tuning a delay of individual write paths within a memory are disclosed. The memory may comprise a memory array, a first data latch, a second data latch, and circuitry. The first and second data latches may be configured to each sample a respective data value, responsive to detecting a first edge of a first clock signal. The circuitry may be configured to detect the first edge of the first clock signal, and select an output of the first data latch responsive to detecting the first edge of the first clock signal. The circuitry may detect a subsequent opposite edge of the first clock signal, and select an output of the second data latch responsive to sampling the opposite edge of the first clock signal.

Abstract: A memory array includes a number of word lines, with each word line coupled to a word line driver for memory write operations and a word line driver for memory read operations. A decode stage includes write logic for each word line and read logic for each word line. A word line driver stage includes a write word line driver and a read word line driver. The write logic for at least one world line is configured to enable the write word line driver for a memory write operation of the word line while prohibiting the read word line logic from enabling the read word line driver for a memory read operation of the word line.

Abstract: A memory array includes a number of word lines, with each word line coupled to a word line driver for memory write operations and a word line driver for memory read operations. A decode stage includes write logic for each word line and read logic for each word line. A word line driver stage includes a write word line driver and a read word line driver. The write logic for at least one world line is configured to enable the write word line driver for a memory write operation of the word line while prohibiting the read word line logic from enabling the read word line driver for a memory read operation of the word line.