Abstract: A microelectronic device includes semiconductor device with a component at a front surface of the semiconductor device and a backside heat spreader layer on a back surface of the semiconductor device. The backside heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.

Abstract: A method for forming a graphene FET includes providing a graphene layer having a surface. A first metal layer having a work function <4.3 eV is deposited on the graphene surface. The first metal layer is oxidized to form a first metal oxide layer. The first metal oxide layer is etched to provide open surface contact regions including a first and a second region of the graphene layer for providing a graphene surface source and drain contact. A second metal layer is deposited including a second metal layer portion providing a source with a source contact over the graphene surface source contact and a second metal layer portion providing a drain with a drain contact over the graphene surface drain contact. A grown-in graphitic interface layer is formed at an interface between the source contact and graphene surface source contact and the drain contact and graphene surface drain contact.

Abstract: A Graphene Hall sensor (GHS) may be provided with a modulated gate bias signal in which the modulated gate bias signal alternates at a modulation frequency between a first voltage that produces a first conductivity state in the GHS and a second voltage that produces approximately a same second conductivity state in the GHS. A bias current may be provided through a first axis of the GHS. A resultant output voltage signal may be provided across a second axis of the Hall sensor that includes a modulated Hall voltage and an offset voltage, in which the Hall voltage is modulated at the modulation frequency. An amplitude of the Hall voltage that does not include the offset voltage may be extracted from the resultant output voltage signal.

Abstract: A fuse-programmable register or memory location having a plurality of fusible links of differing electrical characteristics in parallel. In one embodiment, three fusible links with different resistances are provided, such that application of a programming voltage non-uniformly distributes the current among the links, allowing varying voltages to selectively blow one or more of the links. Sensing of the programmed state is performed by applying a voltage across the parallel links and measuring the current in comparison with a plurality of reference currents. Reduction in the overhead chip area per bit and in the serial data communication latency are obtained.

Abstract: A microelectronic device includes semiconductor device with a component at a front surface of the semiconductor device and a backside heat spreader layer on a back surface of the semiconductor device. The backside heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.

Abstract: A microelectronic device includes semiconductor device with a component at a front surface of the semiconductor device and a backside heat spreader layer on a back surface of the semiconductor device. The backside heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.

Abstract: A microelectronic device includes a heat spreader layer on an electrode of a component and a metal interconnect on the heat spreader layer. The heat spreader layer is disposed above a top surface of a substrate of the semiconductor device. The heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.

Abstract: Described examples include graphene Hall sensors, magnetic sensor systems and methods for sensing a magnetic field using an adjustable gate voltage to adapt the Hall sensor magnetic field sensitivity according to a control input for environmental or process compensation and/or real-time adaptation for balancing power consumption and minimum detectable field performance. The graphene Hall sensor gate voltage can be modulated and the sensor output signal can be demodulated to combat flicker or other low frequency noise. Also, graphene Hall sensors can be provided with capacitive coupled contacts for reliable low impedance AC coupling to instrumentation amplifiers or other circuits using integral capacitance.

Abstract: A microelectronic device includes a heat spreader layer on an electrode of a component and a metal interconnect on the heat spreader layer. The heat spreader layer is disposed above a top surface of a substrate of the semiconductor device. The heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.

Abstract: A microelectronic device includes a heat spreader layer on an electrode of a component and a metal interconnect on the heat spreader layer. The heat spreader layer is disposed above a top surface of a substrate of the semiconductor device. The heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.

Abstract: A microelectronic device includes semiconductor device with a component at a front surface of the semiconductor device and a backside heat spreader layer on a back surface of the semiconductor device. The backside heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.