Patents by Inventor Archit Dhingra

Archit Dhingra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HfSfield-effect transistors with a two-dimensional hole gas
    Patent number: 12733196
    Abstract: HfS3-based semiconductor devices that include a substrate layer, a substrate dielectric layer formed on the substrate layer, a bulk layer formed on the substrate dielectric layer, the bulk layer comprising as-synthesized n-type HfS3, and a p-type HfS3 layer formed on the bulk layer, wherein the p-type HfS3 comprises the two-dimensional hole gas (2DHG) layer. FET devices further include first and second electrodes located on the substrate dielectric layer and forming a semiconductor channel between the first and second electrodes.
    Type: Grant
    Filed: October 19, 2023
    Date of Patent: September 8, 2026
    Assignee: Board of Regents of the University of Nebraska
    Inventors: Archit Dhingra, Peter A. Dowben, Alexey Lipatov, Alexander Sinitskii
  • HfS3 FIELD-EFFECT TRANSISTORS WITH A TWO-DIMENSIONAL HOLE GAS
    Publication number: 20240162342
    Abstract: HfS3-based semiconductor devices that include a substrate layer, a substrate dielectric layer formed on the substrate layer, a bulk layer formed on the substrate dielectric layer, the bulk layer comprising as-synthesized n-type HfS3, and a p-type HfS3 layer formed on the bulk layer, wherein the p-type HfS3 comprises the two-dimensional hole gas (2DHG) layer. FET devices further include first and second electrodes located on the substrate dielectric layer and forming a semiconductor channel between the first and second electrodes.
    Type: Application
    Filed: October 19, 2023
    Publication date: May 16, 2024
    Inventors: Archit Dhingra, Peter A. Dowben, Alexey Lipatov, Alexander Sinitskii