Abstract: A sensing device, a method for fabrication thereof, and a method for operating the same are disclosed. The sensing device includes an upper harvester having a piezoelectric (PE) thin film layer, a pressure sensor having a first metallization layer forming a source region and a drain region, a piezoresistive (PR) thin film layer that provides a channel region permitting passage of charge carriers between the source region and the drain region, a second metallization layer forming a gate electrode and regulating flow of the charge carriers through the piezoelectric thin film layer in response to a strain on the PE thin film layer, and an insulating layer disposed between the PR thin film layer and the second metallization layer. In other embodiments, the device includes a lower harvesting including a PE thin film layer for harvesting electrical energy from the stress of a mechanical load on the device.