Abstract: A light-generating semiconductor region is grown by epitaxy on a silicon substrate. The light-generating semiconductor region is a lamination of layers of semiconducting nitrides containing a Group III element or elements. The silicon substrate has a p-type impurity-diffused layer formed therein by thermal diffusion of the Group III element or elements from the light-generating semiconductor region as a secondary product of the epitaxial growth of this region on the substrate. The p-type impurity-diffused layer is utilized as a part of overvoltage protector diodes which are serially interconnected with each other and in parallel with the LED section of the device between a pair of electrodes.

Abstract: A light-generating semiconductor region is grown by epitaxy on a silicon substrate. The light-generating semiconductor region is a lamination of layers of semiconducting nitrides containing a Group III element or elements. The silicon substrate has a p-type impurity-diffused layer formed therein by thermal diffusion of the Group III element or elements from the light-generating semiconductor region as a secondary product of the epitaxial growth of this region on the substrate. The p-type impurity-diffused layer is utilized as a part of overvoltage protector diodes which are serially interconnected with each other and in parallel with the LED section of the device between a pair of electrodes.

Abstract: An LED incorporating an overvoltage protector with a minimum of space requirement. The LED itself comprises a p-type semiconductor substrate, a light-generating semiconductor region grown epitaxially thereon, a first electrode on the light-generating semiconductor region, and a second electrode on the underside of the substrate. The standard method of LED fabrication is such that the substrate is notionally divisible into a main portion in register with the overlying light-generating semiconductor region and, surrounding the main portion, a tubular marginal portion needed for dicing the wafer into individual squares or dice. The overvoltage protector comprises an n-type semiconductor film formed on the marginal portion of the substrate and held against the side surfaces of the light-generating semiconductor region via an insulating film.

Abstract: There is provided a semiconductor light emitting diode and a method of manufacturing the same that enable voltage in the forward direction to be decreased while allowing light extraction efficiency to be improved. This semiconductor light emitting diode is formed by a substrate, a light emitting portion that is disposed on one main surface of the substrate, a first electrode that is disposed on the light emitting portion, a pad electrode that is disposed on the first electrode, concave portions that are formed on at least a portion of the one main surface of the substrate, and a conductive layer that is formed from a conductive material that is disposed in the concave portions and reflects light emitted from the light emitting portion.

Abstract: A first principal plane faces a second principal plane of a p-type Ga N compound semiconductor that is in contact with an MQW luminescent layer. On the surface of the first principal plane, a first region made up of the p-type Ga N compound semiconductor including at least Ni is formed. On the surface of the first region, an electrode composed of an alloy including Ni and Aluminum is formed. On the electrode, a pad electrode for external connection consisting of Al or Au is formed.

Abstract: An overvoltage-proof light-emitting diode has a lamination of light-generating semiconductor layers on a first major surface of a silicon substrate. A front electrode in the form of a bonding pad is mounted centrally atop the light-generating semiconductor layers whereas a back electrode covers a second major surface of the substrate. An overvoltage protector, of which several different forms are disclosed, is disposed between the bonding pad and the second major surface of the substrate. The bonding pad and back electrode serves as electrodes for both LED and overvoltage protector. As seen from above the device, or in a direction normal to the first major surface of the substrate, the overvoltage protector lies substantially wholly beneath the bonding pad.

Abstract: There is provided a semiconductor light emitting diode and a method of manufacturing the same that enable voltage in the forward direction to be decreased while allowing light extraction efficiency to be improved. This semiconductor light emitting diode is formed by a substrate, a light emitting portion that is disposed on one main surface of the substrate, a first electrode that is disposed on the light emitting portion, a pad electrode that is disposed on the first electrode, concave portions that are formed on at least a portion of the one main surface of the substrate, and a conductive layer that is formed from a conductive material that is disposed in the concave portions and reflects light emitted from the light emitting portion.

Abstract: An LED incorporating an overvoltage protector with a minimum of space requirement. The LED itself comprises a p-type semiconductor substrate, a light-generating semiconductor region grown epitaxially thereon, a first electrode on the light-generating semiconductor region, and a second electrode on the underside of the substrate. The standard method of LED fabrication is such that the substrate is notionally divisible into a main portion in register with the overlying light-generating semiconductor region and, surrounding the main portion, a tubular marginal portion needed for dicing the wafer into individual squares or dice. The overvoltage protector comprises an n-type semiconductor film formed on the marginal portion of the substrate and held against the side surfaces of the light-generating semiconductor region via an insulating film.

Abstract: A first principal plane faces a second principal plane of a p-type Ga N compound semiconductor that is in contact with an MQW luminescent layer. On the surface of the first principal plane, a first region made up of the p-type Ga N compound semiconductor including at least Ni is formed. On the surface of the first region, an electrode composed of an alloy including Ni and Aluminum is formed. On the electrode, a pad electrode for external connection consisting of Al or Au is formed.

Abstract: An overvoltage-proof light-emitting diode has a lamination of light-generating semiconductor layers on a first major surface of a silicon substrate. A front electrode in the form of a bonding pad is mounted centrally atop the light-generating semiconductor layers whereas a back electrode covers a second major surface of the substrate. An overvoltage protector, of which several different forms are disclosed, is disposed between the bonding pad and the second major surface of the substrate. The bonding pad and back electrode serves as electrodes for both LED and overvoltage protector. As seen from above the device, or in a direction normal to the first major surface of the substrate, the overvoltage protector lies substantially wholly beneath the bonding pad.