Abstract: Method of manufacturing a semiconductor device and semiconductor device manufactured by the use of such a method.The invention describes a method of contacting narrow regions, such as narrow polysilicon gates of a CCD having a width of, for example, 4 .mu.m. Poly 2 and poly 3 layers, which are required already for the other CCD phases, are used as etching masks having two contact openings of 4 .mu.m which are displaced both with respect to each other and with respect to the region to be contacted, so that it is possible to define a contact opening which is smaller than 4 .mu.m and is aligned accurately above the gate to be contacted. FIG. 4.

Abstract: Method of manufacturing a semiconductor device and semiconductor device manufactured by the use of such a method.A method of contacting narrow regions, such as narrow polysilicon gates of a CCD, having widths of, for example, 4 .mu.m. Upper layers, which are required for the CCD electrodes, are used as etching masks for contacts to the lower electrode layers. Two upper layers define two contact openings of 4 .mu.m which are displaced both with respect to each other and with respect to the region to be contacted. Therefore it is possible to define a contact opening which is smaller than 4 .mu.m and which is aligned accurately above the gate to be contacted.

Abstract: The invention discloses a compact construction of an n-channel surface MOS source follower in a p-pocket in an n-type substrate. The source is connected to the p-pocket in order to avoid feedback. The drain is connected to the substrate which acts as a supply line. This construction permits manufacturing several output amplifiers with a minimum pitch. The invention is of particular importance for CCD sensors.

Abstract: In a 4-phase CCD with 90.degree. overlap of the clock voltages, the area below two clock electrodes may be used for the storage of charge packets which thus can be 2.times. as large as in conventional modes of operation. By choosing the penultimate electrode before the reading stage to be approximately 2.5.times. as large as the other electrodes, this double charge packet can be transferred undivided in time to the output diode, a feature which is particularly advantageous for further signal processing.