Abstract: A plater arrangement for filling a hole formed in a component carrier with copper is disclosed. The plater arrangement includes an electroless plater section for forming a layer of an electrically conductive material, which layer covers at least part of a surface of a wall of a component carrier and where the wall delimits the hole in the component carrier and an electro-plater section for covering at least partially the layer and filling at least partially an unfilled volume of the hole with copper by an electro-plating process, wherein at least partially covering the layer and at least partially filling the hole is done by flash-plating. The electro-plater section having a bath for plating with copper.

Abstract: A method of filling a hole formed in a component carrier with copper is disclosed. The method comprises i) forming a layer of an electrically conductive material covering at least part of a surface of a wall, wherein the wall delimits the hole, and subsequently ii) covering at least partially the layer and filling at least partially an unfilled volume of the hole with copper using a plating process including a bath. Hereby, the bath comprises a concentration of a copper ion, in particular Cu2+, in a range between 50 g/L and 75 g/L, in particular in a range between 60 g/L and 70 g/L.

Abstract: A method of filling a hole formed in a component carrier with copper is disclosed. The method comprises i) forming a layer of an electrically conductive material covering at least part of a surface of a wall, wherein the wall delimits the hole, and subsequently ii) covering at least partially the layer and filling at least partially an unfilled volume of the hole with copper using a plating process including a bath. Hereby, the bath comprises a concentration of a copper ion, in particular Cu2+, in a range between 50 g/L and 75 g/L, in particular in a range between 60 g/L and 70 g/L.