Patents by Inventor Arezou Khoshakhlagh
Arezou Khoshakhlagh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230114881Abstract: Disclosed herein is an infrared detector. The detector includes a plurality of pixels. Each pixel includes an n-type semiconductor top contact layer, a p-type semiconductor layer electrically connected to the n-type top contact layer to form a top p-n junction, a unipolar electron barrier electrically connected to the p-type semiconductor layer, a bottom absorber, and an n-type semiconductor bottom contact layer electrically connected to the bottom absorber. The unipolar electron barrier is positioned between the p-type semiconductor layer and the bottom absorber.Type: ApplicationFiled: October 7, 2022Publication date: April 13, 2023Applicant: California Institute of TechnologyInventors: David Z. Ting, Sam A. Keo, Arezou Khoshakhlagh, Alexander Soibel, Sarath D. Gunapala
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Patent number: 10872987Abstract: Barrier infrared detectors having structures configured to enhance the quantum efficiency, and methods of their manufacture are provided. In particular, device structures for constructing high-performance barrier infrared detectors using novel combinations of p-type and n-type absorber regions and contact regions are provided. The infrared detectors generally incorporate a “p+Bpnn+” structure. The detectors generally comprise, in sequence, a highly p-doped contact layer “p+”, an electron unipolar barrier “B”, a p-type absorber section “p”, and n-type absorber section “n”, and a highly n-doped contact layer “n+”.Type: GrantFiled: December 12, 2016Date of Patent: December 22, 2020Assignee: California Institute of TechnologyInventors: David Z. Ting, Alexander Soibel, Arezou Khoshakhlagh, Sarath D. Gunapala
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Publication number: 20190013427Abstract: Barrier infrared detectors having structures configured to enhance the quantum efficiency, and methods of their manufacture are provided. In particular, device structures for constructing high-performance barrier infrared detectors using novel combinations of p-type and n-type absorber regions and contact regions are provided. The infrared detectors generally incorporate a “p+Bpnn+” structure. The detectors generally comprise, in sequence, a highly p-doped contact layer “p+”, an electron unipolar barrier “B”, a p-type absorber section “p”, and n-type absorber section “n”, and a highly n-doped contact layer “n+”.Type: ApplicationFiled: December 12, 2016Publication date: January 10, 2019Applicant: California Institute of TechnologyInventors: David Z. Ting, Alexander Soibel, Arezou Khoshakhlagh, Sarath D. Gunapala
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Patent number: 9831372Abstract: Barrier infrared detectors configured to operate in the long-wave (LW) infrared regime are provided. The barrier infrared detector systems may be configured as pin, pbp, barrier and double heterostructrure infrared detectors incorporating optimized p-doped absorbers capable of taking advantage of high mobility (electron) minority carriers. The absorber may be a p-doped Ga-free InAs/InAsSb material. The p-doping may be accomplished by optimizing the Be doping levels used in the absorber material. The barrier infrared detectors may incorporate individual superlattice layers having narrower periodicity and optimization of Sb composition to achieve cutoff wavelengths of ˜10 ?m.Type: GrantFiled: May 13, 2016Date of Patent: November 28, 2017Assignee: California Institute of TechnologyInventors: Arezou Khoshakhlagh, David Z. Ting, Sarath D. Gunapala
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Patent number: 9799785Abstract: Dual-band barrier infrared detectors having structures configured to reduce spectral crosstalk between spectral bands and/or enhance quantum efficiency, and methods of their manufacture are provided. In particular, dual-band device structures are provided for constructing high-performance barrier infrared detectors having reduced crosstalk and/or enhance quantum efficiency using novel multi-segmented absorber regions. The novel absorber regions may comprise both p-type and n-type absorber sections. Utilizing such multi-segmented absorbers it is possible to construct any suitable barrier infrared detector having reduced crosstalk, including npBPN, nBPN, pBPN, npBN, npBP, pBN and nBP structures. The pBPN and pBN detector structures have high quantum efficiency and suppresses dark current, but has a smaller etch depth than conventional detectors and does not require a thick bottom contact layer.Type: GrantFiled: March 14, 2016Date of Patent: October 24, 2017Assignee: California Institute of TechnologyInventors: David Z. Ting, Alexander Soibel, Arezou Khoshakhlagh, Sarath Gunapala
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Patent number: 9647164Abstract: Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.Type: GrantFiled: October 16, 2014Date of Patent: May 9, 2017Assignee: California Institute of TechnologyInventors: David Z. Ting, Sarath D. Gunapala, Alexander Soibel, Jean Nguyen, Arezou Khoshakhlagh
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Publication number: 20160336476Abstract: Barrier infrared detectors configured to operate in the long-wave (LW) infrared regime are provided. The barrier infrared detector systems may be configured as pin, pbp, barrier and double heterostructrure infrared detectors incorporating optimized p-doped absorbers capable of taking advantage of high mobility (electron) minority carriers. The absorber may be a p-doped Ga-free InAs/InAsSb material. The p-doping may be accomplished by optimizing the Be doping levels used in the absorber material. The barrier infrared detectors may incorporate individual superlattice layers having narrower periodicity and optimization of Sb composition to achieve cutoff wavelengths of ˜10 ?m.Type: ApplicationFiled: May 13, 2016Publication date: November 17, 2016Inventors: Arezou Khoshakhlagh, David Z. Ting, Sarath D. Gunapala
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Patent number: 9214581Abstract: Systems and methods of implementing barrier infrared detectors on lattice mismatched substrates are provided. The barrier infrared detector systems combine an active detector structure (e.g., contact/barrier/absorber pairs) with a non-lattice matched substrate through a multi-layered transitional structure that forms a virtual substrate that can be strain balanced with the detector structure. The transitional metamorphic layer may include one or both of at least one graded metamorphic buffer layer or interfacial misfit array (IMF). A further interfacial layer may be interposed within the transitional structure, in some embodiments this interfacial layer includes at least one layer of AlSb.Type: GrantFiled: February 11, 2014Date of Patent: December 15, 2015Assignee: CALIFORNIA INSTITUTE OF TECHNOLOGYInventors: Arezou Khoshakhlagh, David Z Ting, Sarath D. Gunapala, Cory J. Hill
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Publication number: 20150145091Abstract: Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.Type: ApplicationFiled: October 16, 2014Publication date: May 28, 2015Inventors: David Z. Ting, Sarath D. Gunapala, Alexander Soibel, Jean Nguyen, Arezou Khoshakhlagh
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Patent number: 8928029Abstract: Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.Type: GrantFiled: December 12, 2012Date of Patent: January 6, 2015Assignee: California Institute of TechnologyInventors: David Z. Ting, Sarath D. Gunapala, Alexander Soibel, Jean Nguyen, Arezou Khoshakhlagh
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Publication number: 20140225064Abstract: Systems and methods of implementing barrier infrared detectors on lattice mismatched substrates are provided. The barrier infrared detector systems combine an active detector structure (e.g., contact/barrier/absorber pairs) with a non-lattice matched substrate through a multi-layered transitional structure that forms a virtual substrate that can be strain balanced with the detector structure. The transitional metamorphic layer may include one or both of at least one graded metamorphic buffer layer or interfacial misfit array (IMF). A further interfacial layer may be interposed within the transitional structure, in some embodiments this interfacial layer includes at least one layer of AlSb.Type: ApplicationFiled: February 11, 2014Publication date: August 14, 2014Applicant: California Institute of TechnologyInventors: Arezou Khoshakhlagh, David Z. Ting, Sarath D. Gunapala, Cory J. Hill
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Patent number: 8217480Abstract: A superlattice-based infrared absorber and the matching electron-blocking and hole-blocking unipolar barriers, absorbers and barriers with graded band gaps, high-performance infrared detectors, and methods of manufacturing such devices are provided herein. The infrared absorber material is made from a superlattice (periodic structure) where each period consists of two or more layers of InAs, InSb, InSbAs, or InGaAs. The layer widths and alloy compositions are chosen to yield the desired energy band gap, absorption strength, and strain balance for the particular application. Furthermore, the periodicity of the superlattice can be “chirped” (varied) to create a material with a graded or varying energy band gap.Type: GrantFiled: August 3, 2011Date of Patent: July 10, 2012Assignee: California Institute of TechnologyInventors: David Z. Ting, Arezou Khoshakhlagh, Alexander Soibel, Cory J. Hill, Sarath D. Gunapala
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Publication number: 20120145996Abstract: A superlattice-based infrared absorber and the matching electron-blocking and hole-blocking unipolar barriers, absorbers and barriers with graded band gaps, high-performance infrared detectors, and methods of manufacturing such devices are provided herein. The infrared absorber material is made from a superlattice (periodic structure) where each period consists of two or more layers of InAs, InSb, InSbAs, or InGaAs. The layer widths and alloy compositions are chosen to yield the desired energy band gap, absorption strength, and strain balance for the particular application. Furthermore, the periodicity of the superlattice can be “chirped” (varied) to create a material with a graded or varying energy band gap.Type: ApplicationFiled: August 3, 2011Publication date: June 14, 2012Applicant: California Institute of TechnologyInventors: David Z. Ting, Arezou Khoshakhlagh, Alexander Soibel, Cory J. Hill, Sarath D. Gunapala