Patents by Inventor Ari Margolis

Ari Margolis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040099283
    Abstract: A method for drying and removing contaminants from a low-k dielectric film of an integrated circuit wafer, the method comprising exposing the low k dielectric layer to photons; and simultaneously with, prior to, or subsequent to the photon exposure, exposing the substrate to a process effective to remove the contaminants without causing degradation of the low k dielectric layer, wherein the process is selected from the group consisting of a heat process, a vacuum process, an oxygen free plasma process, and combinations thereof.
    Type: Application
    Filed: November 26, 2002
    Publication date: May 27, 2004
    Applicant: Axcelis Technologies, Inc.
    Inventors: Carlo Waldfried, Qingyaun Han, John Hallock, Ivan Berry, Ari Margolis, Orlando Escorcia
  • Publication number: 20030054115
    Abstract: Low dielectric constant porous materials with improved elastic modulus. The process of making such porous materials involves providing a porous dielectric material and ultraviolet (UV) curing of the porous dielectric material to produce a UV cured porous dielectric material. UV curing of the porous dielectric material yields a material with improved modulus and comparable dielectric constant. The improvement in elastic modulus is typically greater than about 50%. The porous dielectric material is UV cured for no more than about 300 seconds at a temperature less than about 450° C. The UV cured porous dielectric material can optionally be post-UV treated. Rapid Anneal Processing (RAP) of the UV cured porous dielectric material reduces the dielectric constant of the material while maintaining an improved elastic modulus as compared to the UV cured porous dielectric material. The annealing temperature is typically less than about 450° C., and the annealing time is typically less than about 60 minutes.
    Type: Application
    Filed: September 14, 2001
    Publication date: March 20, 2003
    Inventors: Ralph Albano, Cory Bargeron, Ivan L. Berry, Jeff Bremmer, Orlando Escorcia, Qingyuan Han, Ari Margolis, Carlo Waldfried