Patents by Inventor Ari Saarnikko

Ari Saarnikko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Crystal manufacturing
    Patent number: 8641820
    Abstract: An implementation of a Czochralski-type crystal growth has been shown and embodied. More particularly, a furnace with suitable insulation and flow arrangement is shown to improve the cost-efficiency of production of crystals. That is achieved by the shown new hot-zone structure, gas flows and the growth process which can decrease the power consumption, increase the lifetime of hot-zone parts and improve the productivity, e.g., by giving means for opening the hot-zone and easily adapting the hot-zone to a new crystal diameter.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: February 4, 2014
    Assignee: Okmetic Oyj
    Inventors: Olli Anttila, Ari Saarnikko, Jari Paloheimo
  • CRYSTAL MANUFACTURING
    Publication number: 20120217446
    Abstract: An implementation of a Czochralski-type crystal growth has been shown and embodied. More particularly, a furnace with suitable insulation and flow arrangement is shown to improve the cost-efficiency of production of crystals. That is achieved by the shown new hot-zone structure, gas flows and the growth process which can decrease the power consumption, increase the lifetime of hot-zone parts and improve the productivity, e.g., by giving means for opening the hot-zone and easily adapting the hot-zone to a new crystal diameter.
    Type: Application
    Filed: March 9, 2012
    Publication date: August 30, 2012
    Inventors: Olli ANTTILA, Ari Saarnikko, Jari Paloheimo
  • Crystal manufacturing
    Patent number: 8152921
    Abstract: An implementation of a Czochralski-type crystal growth has been shown and embodied. More particularly, a furnace with suitable insulation and flow arrangement is shown to improve the cost-efficiency of production of crystals. That is achieved by the shown new hot-zone structure, gas flows and the growth process which can decrease the power consumption, increase the lifetime of hot-zone parts and improve the productivity, e.g., by giving means for opening the hot-zone and easily adapting the hot-zone to a new crystal diameter.
    Type: Grant
    Filed: September 1, 2006
    Date of Patent: April 10, 2012
    Assignee: Okmetic Oyj
    Inventors: Olli Anttila, Ari Saarnikko, Jari Paloheimo
  • Crystal manufacturing
    Publication number: 20080053372
    Abstract: An implementation of a Czochralski-type crystal growth has been shown and embodied. More particularly, a furnace with suitable insulation and flow arrangement is shown to improve the cost-efficiency of production of crystals. That is achieved by the shown new hot-zone structure, gas flows and the growth process which can decrease the power consumption, increase the lifetime of hot-zone parts and improve the productivity, e.g., by giving means for opening the hot-zone and easily adapting the hot-zone to a new crystal diameter.
    Type: Application
    Filed: September 1, 2006
    Publication date: March 6, 2008
    Applicant: OKMETIC OYJ
    Inventors: Olli Anttila, Ari Saarnikko, Jari Paloheimo