Abstract: Selective metal capping and/or liner materials and processes described herein may enable hermetically encapsulating metal interconnects and metal-silicon interfaces in transistor contacts. In one example, an IC structure includes an interconnect layer with a conductive interconnect that is lined with a ruthenium-based liner, and capped with a selectively deposited cap that includes one or more of ruthenium, molybdenum, tungsten, rhodium, iridium, rhenium, and niobium individually or in an alloy. In another example, an IC structure includes a transistor contact structure with a selectively deposited conductive cap over an interface material, where the conductive cap material is absent or substantially thinner on sidewalls of the contact opening. In one example, the conductive cap material over the Si-metal interface includes one or more of ruthenium, molybdenum, tungsten, rhodium, iridium, platinum, rhenium, cobalt, and niobium individually or in combination.

Abstract: Disclosed herein are IC structures and devices that aim to mitigate proximity effects of deep trench vias. An example IC structure may include a device region having a first face and a second face, the second face being opposite the first face, and further include a conductive via extending between the first face and the second face, wherein the conductive via includes an electrically conductive material, and wherein a concentration of titanium at sidewalls of the conductive via is below about 1015 atoms per cubic centimeter.

Abstract: Disclosed herein are IC structures and devices that aim to mitigate proximity effects of deep trench vias. An example IC structure may include a device region having a first face and a second face, the second face being opposite the first face, and further include a conductive via extending between the first face and the second face, wherein the conductive via includes an electrically conductive material, and wherein a concentration of titanium at sidewalls of the conductive via is below about 1015 atoms per cubic centimeter.