Abstract: A magnetic device includes a magnetic layer having a ferromagnetic phase to support magnetic skyrmions and an antiferromagnetic phase to annihilate magnetic skyrmions. The magnetic layer transmits between the ferromagnetic and antiferromagnetic phases. A ferroelectric layer is adapted to magnetoelectrically couple with the magnetic layer causing the magnetic layer to transit between the ferromagnetic and antiferromagnetic phases in response to a polarization state of the ferroelectric layer. The polarization state includes a first polarization state corresponding to the ferromagnetic state and a second polarization state corresponding to the antiferromagnetic state. First and second electrodes can be configured to sandwich the magnetic and ferroelectric layers.

Abstract: The present invention relates, in general terms, to magnetoresistance sensors and methods of fabrication thereof. The magnetoresistance sensor comprises a continuous graphene layer disposed on a corrugated and/or stepped surface of a substrate. At least two conductive elements are in contact with the graphene layer. The graphene layer substantially conforms to the corrugated and/or stepped surface of the substrate.

Abstract: An article includes a layer of graphene having a first work function; and a metal oxide film disposed on the layer of graphene, the metal oxide film having a second work function greater than the first work function. Electrons are transferred from the layer of graphene to the metal oxide film, forming a hole accumulation layer in the layer of graphene.

Abstract: An article includes a layer of graphene having a first work function; and a metal oxide film disposed on the layer of graphene, the metal oxide film having a second work function greater than the first work function. Electrons are transferred from the layer of graphene to the metal oxide film, forming a hole accumulation layer in the layer of graphene.