Abstract: A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.

Abstract: A thin sheet (20) disposed on a carrier (10) via a surface modification layer (30) to form an article (2), wherein the article may be subjected to high temperature processing, as in FEOL semiconductor processing, not outgas and have the thin sheet maintained on the carrier without separation therefrom during the processing, yet be separated therefrom upon room temperature peeling force that leaves the thinner one of the thin sheet and carrier intact. Interposers (56) having arrays (50) of vias (60) may be formed on the thin sheet, and devices (66) formed on the interposers. Alternatively, the thin sheet may be a substrate on which semiconductor circuits are formed during FEOL processing.

Abstract: Electronics packages that incorporate components such as glass-based interposer assemblies are disclosed, as well as methods of forming thereof. A method includes bonding a glass-based substrate to a carrier, applying a metallization layer and/or a dielectric layer over the glass-based substrate to obtain a layered structure bonded to the carrier, removing sections of the layered structure such that portions of the layered structure remain on the carrier with a space between each thereof, attaching one or more dies to the portions, dispensing an underfill material between the glass-based substrate and the dies to obtain assemblies bonded to the carrier, encapsulating the assemblies with a polymeric material to obtain encapsulated assemblies, removing the carrier from the encapsulated assemblies to expose a back side of the encapsulated assemblies, and applying second metallization layers and second dielectric layers over the back side of the encapsulated assemblies to form the glass-based structures.

Abstract: A method for forming a plurality of precision holes in a substrate by drilling, including affixing a sacrificial cover layer to a surface of the substrate, positioning a laser beam in a predetermined location relative to the substrate and corresponding to a desired location of one of the plurality of precision holes, forming a through hole in the sacrificial cover layer by repeatedly pulsing a laser beam at the predetermined location, and pulsing the laser beam into the through hole formed in the sacrificial cover layer. A work piece having precision holes including a substrate having the precision holes formed therein, wherein a longitudinal axis of each precision hole extends in a thickness direction of the substrate, and a sacrificial cover layer detachably affixed to a surface of the substrate, such that the sacrificial cover layer reduces irregularities of the precision holes.

Abstract: Articles including a glass-based substrate with holes, semiconductor packages including an article with holes, and methods of fabricating holes in a substrate are disclosed. In one embodiment, an article includes a glass-based substrate having a first surface, a second surface, and at least one hole extending from the first surface. The at least one hole has an interior wall having a surface roughness Ra that is less than or equal to 1 ?m. The at least one hole has a first opening having a first diameter that is present the first surface. A first plane is defined by the first surface of the glass-based substrate based on an average thickness of the glass-based substrate. A ratio of a depression depth to the first diameter of the at least one hole is less than or equal to 0.007.

Abstract: A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.

Abstract: A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.

Abstract: Articles including a glass-based substrate with holes, semiconductor packages including an article with holes, and methods of fabricating holes in a substrate are disclosed. In one embodiment, an article includes a glass-based substrate having a first surface, a second surface, and at least one hole extending from the first surface. The at least one hole has an interior wall having a surface roughness Ra that is less than or equal to 1 ?m. The at least one hole has a first opening having a first diameter that is present the first surface. A first plane is defined by the first surface of the glass-based substrate based on an average thickness of the glass-based substrate. A ratio of a depression depth to the first diameter of the at least one hole is less than or equal to 0.007.

Abstract: A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.

Abstract: A method for forming a plurality of precision holes in a substrate by drilling, including affixing a sacrificial cover layer to a surface of the substrate, positioning a laser beam in a predetermined location relative to the substrate and corresponding to a desired location of one of the plurality of precision holes, forming a through hole in the sacrificial cover layer by repeatedly pulsing a laser beam at the predetermined location, and pulsing the laser beam into the through hole formed in the sacrificial cover layer. A work piece having precision holes including a substrate having the precision holes formed therein, wherein a longitudinal axis of each precision hole extends in a thickness direction of the substrate, and a sacrificial cover layer detachably affixed to a surface of the substrate, such that the sacrificial cover layer reduces irregularities of the precision holes.

Abstract: An edge finishing apparatus includes a surface, a fluid delivery device configured to deliver at least one magnetorheological polishing fluid (MPF) ribbon to the at least one well, at least one magnet placed adjacent to the surface to selectively apply a magnetic field in a vicinity of the surface, and at least one holder placed in opposing relation to the surface, the at least one holder being configured to support at least one article such that an edge of the at least one article can be selectively immersed in the MPF ribbon delivered to the at least one well.

Abstract: An edge finishing apparatus includes a surface, a fluid delivery device configured to deliver at least one magnetorheological polishing fluid (MPF) ribbon to the at least one well, at least one magnet placed adjacent to the surface to selectively apply a magnetic field in a vicinity of the surface, and at least one holder placed in opposing relation to the surface, the at least one holder being configured to support at least one article such that an edge of the at least one article can be selectively immersed in the MPF ribbon delivered to the at least one well.

Abstract: An edge finishing apparatus includes a surface, a fluid delivery device configured to deliver at least one magnetorheological polishing fluid (MPF) ribbon to the at least one well, at least one magnet placed adjacent to the surface to selectively apply a magnetic field in a vicinity of the surface, and at least one holder placed in opposing relation to the surface, the at least one holder being configured to support at least one article such that an edge of the at least one article can be selectively immersed in the MPF ribbon delivered to the at least one well.

Abstract: Methods of finishing an edge of a glass sheet comprise the step of machining the edge of the glass sheet into a predetermined cross-sectional profile along a plane taken transverse to the edge of the glass sheet with an initial average edge strength ESi. The methods also include the step of finishing the edge with at least one finishing member, such as an endless belt, without substantially changing a shape of the predetermined cross-sectional profile. In one example, a wet slurry including an abrasive can be applied to at least one of a finishing member and the edge of the glass sheet. After finishing the edge, example finished average edge strengths ESf can be at least about 250 MPa. In addition or alternatively, in another example, the ratio ESf/ESi can be within a range of from about 1.6 to about 5.6.

Abstract: A thin sheet (20) disposed on a carrier (10) via a surface modification layer (30) to form an article (2), wherein the article may be subjected to high temperature processing, as in FEOL semiconductor processing, not outgas and have the thin sheet maintained on the carrier without separation therefrom during the processing, yet be separated therefrom upon room temperature peeling force that leaves the thinner one of the thin sheet and carrier intact. Interposers (56) having arrays (50) of vias (60) may be formed on the thin sheet, and devices (66) formed on the interposers. Alternatively, the thin sheet may be a substrate on which semiconductor circuits are formed during FEOL processing.

Abstract: A method of preparing an edge-strengthened article comprises polishing of an edge of an article having a first edge strength using magnetorheological finishing, wherein after the polishing the article has a second edge strength and the second edge strength is greater than the first edge strength.

Abstract: A method for forming a plurality of precision holes in a substrate by drilling, including affixing a sacrificial cover layer to a surface of the substrate, positioning a laser beam in a predetermined location relative to the substrate and corresponding to a desired location of one of the plurality of precision holes, forming a through hole in the sacrificial cover layer by repeatedly pulsing a laser beam at the predetermined location, and pulsing the laser beam into the through hole formed in the sacrificial cover layer. A work piece having precision holes including a substrate having the precision holes formed therein, wherein a longitudinal axis of each precision hole extends in a thickness direction of the substrate, and a sacrificial cover layer detachably affixed to a surface of the substrate, such that the sacrificial cover layer reduces irregularities of the precision holes.

Abstract: Methods of finishing a sheet of material, such as a glass sheet, include finishing an edge portion of the sheet of material with magnetorheological finishing. In one example, the average thickness of the sheet of material between a first face and a second face is from 50 ?m to about 500 ?m. In another example, the method consists essentially of a single step of finishing the edge portion of the glass sheet with magnetorheological finishing such that the entire edge portion is shaped between the first face and the second face during the a single magnetorheological finishing step.

Abstract: A method of improving strength of a chemically-strengthened glass article comprises exposing a target surface of the glass article to an ion-exchange strengthening process, the ion-exchange strengthening process generating a chemically-induced compressive layer in the glass article. Thereafter, dynamic interfacing of the target surface of the glass article with a sheared magnetorheological fluid is performed to remove at least a portion of the chemically-induced compressive layer from the glass article, wherein the parameters of the dynamic interfacing of the glass article with the sheared magnetorheological fluid are such that a thickness of the removed portion of the chemically-induced compressive layer is less than approximately 20% of the chemically-induced compressive layer.

Abstract: A method for screening abrasive wheels for fabricating a honeycomb extrusion die from a die body, and methods for fabricating a honeycomb extrusion die using an abrasive wheel assembly. One method for fabricating a honeycomb extrusion die includes measuring at least one of runout and thickness of each of a plurality of abrasive blades while rotating the blades, selecting a subset of the plurality of blades that have a measured runout or a measured thickness within a predetermined range, and mounting the subset of blades spaced from one another and concentrically aligned along a rotation axis of the abrasive wheel assembly.