Abstract: A method of determining the location of a lithographic substrate relative to an imprint template is disclosed.

Abstract: A metrology tool is arranged to measure a parameter of a substrate that has been provided with a pattern in a lithographic apparatus. The metrology tool includes a base frame, a substrate table constructed and arranged to hold the substrate, a sensor constructed and arranged to measure a parameter of the substrate, a displacement system configured to displace the substrate table or the sensor with respect to the other in a first direction, a balance mass, and a bearing configured to movably support the first balance mass so as to be substantially free to translate in a direction opposite of the first direction in order to counteract a displacement of the substrate table or sensor in the first direction.

Abstract: A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes two reference gratings provided in the substrate and two measurement gratings on top of the reference gratings, the measurement gratings being similar to the reference gratings, and oppositely biased in a single direction relative to the respective reference gratings. An overlay measurement device with an image sensor is used for obtaining pixel data of a measurement spot in each of the two measurement gratings. Asymmetry for each pixel in the measurement spot is measured, and from the pixel asymmetry measurements in associated pixels of each of the two measurement gratings an overlay value and a process dependent value is determined, as well as a quality indicator for the overlay value and the process dependent value.

Abstract: A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes a reference set of gratings provided in the substrate, the reference set including two reference gratings having line elements in a first direction and one reference grating having line elements in a second, perpendicular, direction. A measurement set of gratings is provided on top of the reference set of gratings, the measurement set comprising three measurement gratings similar to the reference gratings. Two of the measurement gratings are oppositely biased in the second direction relative to the respective reference gratings. An overlay measurement device is provided to measure asymmetry of the three gratings in the reference set and the measurement set, and to derive from the measured asymmetry the overlay in both the first and second direction.

Abstract: In a device manufacturing method and lithographic apparatus wherein a pattern is transferred from a patterning device onto a substrate, a measurement target is provided on the substrate in a process enabling execution of a substrate measurement using radiation of a first wavelength. Subsequently the measurement target is transformed in a grid of conducting material, the grid having grid openings which are smaller than the first wavelength. The space in the scribe lane where the measurement target was, is now shielded and may be used again in further layers or processing steps of the substrate.

Abstract: A sensor measuring properties of a substrate in which radiation is projected onto the substrate by a radiation projector that has a first part configured such that the radiation projection can project onto the substrate linearly polarized radiation oriented in a first direction and a second part configured such that the radiation projector can project onto the substrate linearly polarized radiation oriented in a second direction orthogonal to the first direction.

Abstract: An optical metrology system is disclosed that has a measuring system configured to irradiate a metrology mark and record a portion of a reflected, a transmitted, or both, electromagnetic field and a characterization device configured to determine from the recorded field a mark shape parameter indicative of the structure of the metrology mark, the characterization device comprising: a field calculation unit configured to calculate an expected field for reflection, transmission, or both, from a theoretical reference mark based on an algebraic eigenvalue-eigenvector representation of the expected field, a field derivative calculation unit configured to calculate a first order derivative, a higher order derivative, or both, of the expected field with respect to the mark shape parameter by first deriving analytical forms for corresponding derivatives of eigenvalues and eigenvectors of the eigenvalue-eigenvector representation, and an optimization unit configured to use the outputs from the field and field derivati

Abstract: A lithographic projection apparatus is disclosed in which a space between the projection system and a sensor is filled with a liquid.

Abstract: In a method according to one embodiment of the invention, aberrations in a lithographic apparatus are detected by printing a test pattern having at least one degree of symmetry and being sensitive to a particular aberration in the apparatus, and using a scatterometer to derive information concerning the aberration. The test structure may comprise a two-bar grating, in which case the inner and outer duty ratios can be reconstructed to derive information indicative of comatic aberration. Alternatively, a hexagonal array of dots can be used, such that scatterometry data can be used to reconstruct dot diameters indicative of 3-wave aberration.

Abstract: Optical recording method and apparatus using this method. An optical recording method and recording apparatus using this method is described in which an optimum write power of a radiation beam in the apparatus is set by writing a series of test patterns on an optical recordable medium, forming a read signal from the patterns, reading a preset value of the derivative of the modulation of the read signal with respect to the write power from the medium, and processing the read signal together with the preset value to derive an optimum value of the write power.

Abstract: A metrology apparatus for measuring a parameter of a microscopic structure on a substrate, the apparatus comprising a supercontinuum light source arranged to generate a measurement beam, an optical system arranged to direct the measurement beam onto the substrate and a sensor for detecting radiation reflected and/or diffracted by the structure.

Abstract: A metrology apparatus for measuring a parameter of a microscopic structure on a substrate, the apparatus comprising a supercontinuum light source arranged to generate a measurement beam, an optical system arranged to direct the measurement beam onto the substrate and a sensor for detecting radiation reflected and/or diffracted by the structure.

Abstract: One or more focus settings for use in a device manufacturing method is determined by printing a plurality of target markers at different focus settings and using a scatterometer, e.g. off-line, to measure a property of the target markers that is indicative of focus.

Abstract: A method for performing a tilted focus test includes the steps of providing a target object, providing a projection beam of radiation using a radiation source, providing a reflective device to introduce a projected projection beam of radiation onto the target portion, introducing a first projected projection beam of radiation onto the target object using the reflective device in a first orientation, using a tilting device for tilting the reflective device to a second orientation to provide a second projection beam with a tilt relative to said first projection beam, introducing a second projected projection beam of radiation onto the target object, and determining a lateral shift of the first and second projected projection beams on the target object and determining from said lateral shift a defocus of the target object with respect to the projected projection beam.

Abstract: An inspection apparatus, comprising; an illumination system configured to provide an illumination beam for irradiating a target; a first detection system configured to detect radiation scattered from the target in a non-zero order diffraction direction; and the detection system comprises a dispersive element for dispersion of the radiation scattered from the target in the non-zero order diffraction direction and a radiation sensitive device constructed and arranged to measure the intensity of the radiation dispersed by the dispersive element.

Abstract: A lithographic apparatus according to one embodiment includes an alignment system for aligning a substrate. The alignment system comprises an illuminator system configured to illuminate an alignment mark on the substrate with an illumination spot, the alignment mark comprising a plurality of lines and spaces. The system also includes a combiner system configured to transfer two images of the illuminated alignment mark without spatial filtering of the images, rotate the images 180° relatively to each other, and combine the two images; and a detection system configured to detect an alignment signal from the combined images and to determine a unique alignment position by selecting a specific one of extreme values in the detected alignment signal.

Abstract: A lithographic projection apparatus is provided with an optical system built into the wafer table for producing an image of a wafer mark that is provided on the back side of the wafer. The image is located at the plane of the front side of the wafer and can be viewed by an alignment system from the front side of the wafer. Simultaneous alignment between marks on the back and front of the wafer and a mask can be performed using a pre-existing alignment system.

Abstract: The present invention relates to an exposure apparatus that includes an illumination system for providing a projection beam of radiation, a support structure for supporting a device provided with a pattern, the device serving to impart the projection beam with a pattern in its cross-section; a table for holding a target object, a projection system for projecting the patterned beam onto the target object and a tilting device for providing the projection beam with a tilt. The tilting device is provided substantially in a pupil plane of the projection system.

Abstract: An apparatus and method for improved latent overlay metrology is disclosed. In an embodiment, a scatterometer and an overexposed overlay target are used to obtain more robust overlay measurement. Overlay metrology and exposure may be done in parallel.

Abstract: An inspection apparatus is disclosed having an radiation system configured to provide an radiation beam, a beamnsplitter configured to create, from the radiation beam, a first illumination beam and a second illumination beam directed to a planar reference part of a sample and a patterned part of the sample, respectively, and a beam detector configured to detect a detection beam, the detection beam comprising a recombination of radiation scattered from the planar reference part and the patterned part.