Patents by Inventor Arie J. van Rhijn

Arie J. van Rhijn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6693488
    Abstract: An apparatus and method is directed to a power amplifier control circuit that includes a bandwidth switching circuit. The power amplifier control circuit can be used in a GSM EDGE system for controlling the output power of a communication signal. The loop bandwidth of the power amplifier control circuit is high during ramp-up and ramp-down of the output power, and low during transmission of the communication signal. The power amplifier control circuit regulates the output power during power ramping, while preserving the amplitude modulation portion of the communication signal during transmission. The bandwidth switching circuit includes a pair of capacitance circuits that are arranged such that both capacitance circuits charge without affecting the loop bandwidth. The bandwidth switching circuit operates at high speeds associated with a GSM EDGE system, while avoiding transient glitches that may occur due to charging and discharging in the capacitance circuits.
    Type: Grant
    Filed: September 4, 2001
    Date of Patent: February 17, 2004
    Assignee: National Semiconductor Corporation
    Inventor: Arie J. van Rhijn
  • Patent number: 6590452
    Abstract: A cascode stage includes a gain boost circuit arrangement in a folded cascode type of operational amplifier. The gain boost circuit arrangement improves the overall DC gain of the operational amplifier while maintaining good low noise performance with the resistive loads. The cascode stage includes a current mirror circuit, resistive loads, and a regulated (or gain boosted) cascode circuit. The resistive loads are arranged to minimize thermal noise, while the regulated cascode circuit is arranged to increase the output impedance of a current mirror The increased output impedance results in higher DC gain in the operational amplifier. The increased DC gain and low noise characteristics may be implemented in bipolar and FET technologies.
    Type: Grant
    Filed: May 31, 2002
    Date of Patent: July 8, 2003
    Assignee: National Semiconductor Corporation
    Inventor: Arie J. van Rhijn