Abstract: In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.

Abstract: In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.

Abstract: In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.

Abstract: A radiation detector, a method of manufacturing a radiation detector, and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation sensitive surface. The radiation sensitive surface is sensitive to radiation wavelengths between 10-200 nm and charged particles. The radiation detector has a silicon substrate, a dopant layer, a first electrode, and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the silicon substrate.

Abstract: A radiation sensor includes a radiation receiver positioned in a focal plane of the final element of the projection system; a transmissive plate supporting the radiation receiver at a side facing the projection system; a quantum conversion layer to absorb light at the first wavelength incident on the transmissive plate and reradiate light at a second wavelength; a fiber optics block with a plurality of optical fibers; and a radiation detector. In the radiation sensor, the plurality of optical fibers guide light is reradiated by the quantum conversion layer towards the radiation detector. The radiation sensor can be used as a substrate-level sensor in a lithographic apparatus.

Abstract: A sensor for measuring a patterned beam of radiation in a lithographic exposure apparatus includes a receiving part for receiving the patterned beam of radiation and a processing part arranged to receive at least a part of the patterned radiation beam via the receiving part. The receiving part of the sensor is integrated in a substrate table for holding a substrate.

Abstract: The invention relates to a radiation detector, a method of manufacturing a radiation detector and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation-sensitive surface. The radiation-sensitive surface is sensitive for radiation with a wavelength between 10-200 nm. The radiation detector has a silicon substrate, a dopant layer, a first electrode and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer which is in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the Silicon substrate.

Abstract: A radiation detector, a method of manufacturing a radiation detector, and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation sensitive surface. The radiation sensitive surface is sensitive to radiation wavelengths between 10-200 nm and charged particles. The radiation detector has a silicon substrate, a dopant layer, a first electrode, and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the silicon substrate.

Abstract: The invention relates to a radiation detector, a method of manufacturing a radiation detector and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation-sensitive surface. The radiation-sensitive surface is sensitive for radiation with a wavelength between 10-200 nm. The radiation detector has a silicon substrate, a dopant layer, a first electrode and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer which is in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the Silicon substrate.

Abstract: A radiation distribution measurement system for measuring a phase distribution of a beam of radiation and/or a pupil distribution of a projection system includes a transparent carrier plate, a grating and/or a pinhole configured at a first side of the transparent carrier plate, and a camera at an opposite side of the transparent carrier plate. The measurement system also includes a radiation filter between the transparent carrier plate and the camera, with a transmissivity that is lowest at the center of the filter and gradually and concentrically increases towards the outside of the filter. By placing the filter with its specific transmissivity, the difference in intensity across the wave front sensor 10 (i.e. the gradient in intensity) is compensated. The intensity of the light incident on the camera is made more uniform resulting in an improved performance of the measurement system.

Abstract: A radiation sensor includes a radiation receiver positioned in a focal plane of the final element of the projection system; a transmissive plate supporting the radiation receiver at a side facing the projection system; a quantum conversion layer to absorb light at the first wavelength incident on the transmissive plate and reradiate light at a second wavelength; a fiber optics block with a plurality of optical fibers; and a radiation detector. In the radiation sensor, the plurality of optical fibers guide light is reradiated by the quantum conversion layer towards the radiation detector. The radiation sensor can be used as a substrate-level sensor in a lithographic apparatus.

Abstract: A radiation distribution measurement system for measuring a phase distribution of a beam of radiation and/or a pupil distribution of a projection system includes a transparent carrier plate, a grating and/or a pinhole configured at a first side of the transparent carrier plate, and a camera at an opposite side of the transparent carrier plate. The measurement system also includes a radiation filter between the transparent carrier plate and the camera, with a transmissivity that is lowest at the center of the filter and gradually and concentrically increases towards the outside of the filter. By placing the filter with its specific transmissivity, the difference in intensity across the wave front sensor 10 (i.e. the gradient in intensity) is compensated.