Patents by Inventor Ariel Ben-Sasson

Ariel Ben-Sasson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230287402
    Abstract: The disclosure provides two-dimensional protein structures including first and second polypeptides that are different, each form homo-oligomers, and interact to form a rigid interface, polypeptide components of such two-dimensional protein structures, and uses thereof.
    Type: Application
    Filed: August 23, 2021
    Publication date: September 14, 2023
    Inventors: Ariel Ben SASSON, David BAKER, William SHEFFLER, Hannele RUOHOLA-BAKER, Logeshwaran SOMASUNDARM, Emmanuel DERIVERY, Joseph WATSON
  • Patent number: 8759830
    Abstract: An electronic device (100) is presented, being configured for example as a vertical field effect transistor. The device comprises an electrically-conductive perforated patterned structure (102) which is enclosed between a dielectric layer (105) and an active element (106) of the electronic device (100). The electrically-conductive perforated patterned structure (102) comprises a geometrical pattern defining an array of spaced-apart perforation regions (108) surrounded by continuous electrically conductive regions (110). The pattern is such as to allow the active element (106) of the electronic device (100) to be in direct contact with said dielectric layer (105) aligned with the perforation regions (108). A material composition of the device (100) and features of said geometrical pattern are selected to provide a desired electrical conductance of the electrically-conductive perforated patterned structure (102) and a desired profile of a charge carriers' injection barrier along said structure (102).
    Type: Grant
    Filed: April 6, 2010
    Date of Patent: June 24, 2014
    Assignee: Technion Research and Development Foundation Ltd.
    Inventors: Nir Tessler, Ariel Ben-Sasson
  • Publication number: 20120097949
    Abstract: An electronic device (100) is presented, being configured for example as a vertical field effect transistor. The device comprises an electrically-conductive perforated patterned structure (102) which is enclosed between a dielectric layer (105) and an active element (106) of the electronic device (100). The electrically-conductive perforated patterned structure (102) comprises a geometrical pattern defining an array of spaced-apart perforation regions (108) surrounded by continuous electrically conductive regions (110). The pattern is such as to allow the active element (106) of the electronic device (100) to be in direct contact with said dielectric layer (105) aligned with the perforation regions (108). A material composition of the device (100) and features of said geometrical pattern are selected to provide a desired electrical conductance of the electrically-conductive perforated patterned structure (102) and a desired profile of a charge carriers' injection barrier along said structure (102).
    Type: Application
    Filed: April 6, 2010
    Publication date: April 26, 2012
    Applicant: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
    Inventors: Nir Tessler, Ariel Ben-Sasson