Abstract: A process for evaluating a cleaning solution is described. The process includes: (a) subjecting a solution, including a solute and a solvent, to sonic energy to create a sonicated solution; (b) measuring UV absorption of the sonicated solution to produce a sample UV absorbance spectra; (c) obtaining a reference UV absorbance spectra; (d) scaling the reference UV absorbance spectra to the sample UV absorbance spectra at a lower range of the UV spectrum; (e) subtracting from the reference UV absorbance spectra the sample UV absorbance spectra to produce a differential UV spectra; and (f) evaluating at or near a peak of the sample UV absorbance spectra the differential UV absorbance spectra to determine whether the sonicated solution is activated.

Abstract: A process for evaluating a cleaning solution is described, The process includes: (a) subjecting a solution, including a solute and a solvent, to sonic energy to create a sonicated solution; (b) measuring UV absorption of said sonicated solution to produce a sample UV absorbance spectra; (c) obtaining a reference UV absorbance spectra; (d) scaling said reference UV absorbance spectra to said sample UV absorbance spectra at a lower range of said UV spectrum;(e) subtracting from said reference UV absorbance spectra said sample UV absorbance spectra to produce a differential UV spectra; and (f) evaluating at or near a peak of said sample UV absorbance spectra said differential UV absorbance spectra to determine whether said sonicated solution is activated.

Abstract: The present invention provides for treating a surface of a semiconductor material. The method comprises exposing the surface of the semiconductor material to a halogen etchant in a hydrogen environment at an elevated temperature. The method controls the surface roughness of the semiconductor material. The method also has the unexpected benefit of reducing dislocations in the semiconductor material.

Abstract: A process for evaluating a cleaning solution is described. The process includes: (i) subjecting a solution, including a solute and a solvent, to sonic energy to create a sonicated solution; (ii) measuring UV absorption of the sonicated solution to produce a sample UV absorbance spectra; (iii) obtaining a reference solution, which includes a solute concentration that is similar to that of solute concentration in the sonicated solution; (iv) measuring UV absorption of the reference solution to produce a reference UV absorbance spectra; (v) scaling the reference UV absorbance spectra to the sample UV absorbance spectra at a lower range of the UV spectrum; (vi) subtracting from the reference UV absorbance spectra the sample UV absorbance spectra to produce a differential UV spectra; and (vii) evaluating at or near a peak of the sample UV absorbance spectra the differential UV absorbance spectra to determine whether the sonicated solution is activated.

Abstract: A process for evaluating a cleaning solution is described. The process includes: (i) subjecting a solution, including a solute and a solvent, to sonic energy to create a sonicated solution; (ii) measuring UV absorption of the sonicated solution to produce a sample UV absorbance spectra; (iii) obtaining a reference solution, which includes a solute concentration that is similar to that of solute concentration in the sonicated solution; (iv) measuring UV absorption of the reference solution to produce a reference UV absorbance spectra; (v) scaling the reference UV absorbance spectra to the sample UV absorbance spectra at a lower range of the UV spectrum; (vi) subtracting from the reference UV absorbance spectra the sample UV absorbance spectra to produce a differential UV spectra; and (vii) evaluating at or near a peak of the sample UV absorbance spectra the differential UV absorbance spectra to determine whether the sonicated solution is activated.

Abstract: The present invention provides for treating a surface of a semiconductor material. The method comprises exposing the surface of the semiconductor material to a halogen etchant in a hydrogen environment at an elevated temperature. The method controls the surface roughness of the semiconductor material. The method also has the unexpected benefit of reducing dislocations in the semiconductor material.