Abstract: A metrology system includes an imaging system. The imaging system may include an objective lens. The metrology system may include one or more detectors. The metrology system may include an objective positioning stage structurally coupled to the objective lens and configured to adjust a focal plane of at least one of the one or more detectors via movement along an optical axis of the metrology system. The metrology system may include one or more proximity sensors configured to measure lateral positions of a stage element as the objective positioning stage moves along the optical axis. The metrology system may be configured to determine a metrology measurement associated with a target on a sample using the images and lateral positions of the stage element when implementing a metrology recipe.

Abstract: A first x-y translation stage, a second x-y translation stage, and a chuck are disposed in a chamber. The chuck is situated above and coupled to the second x-y translation stage, which is situated above and coupled to the first x-y translation stage. The chuck is configured to support a substrate and to be translated by the first and second x-y stages in x- and y-directions, which are substantially parallel to a surface of the chuck on which the substrate is to be mounted. A first barrier and a second barrier are also disposed in the chamber. The first barrier is coupled to the first x-y translation stage to separate a first zone of the chamber from a second zone of the chamber. The second barrier is coupled to the second x-y translation stage to separate the first zone of the chamber from a third zone of the chamber.

Abstract: An optical metrology tool may include one or more illumination sources to generate illumination having wavelengths both within a short-wave infrared (SWIR) spectral range and outside the SWIR spectral range, illumination optics configured to direct the illumination to a sample, a first imaging channel including a first detector configured to image the sample based on a first wavelength range including at least some wavelengths in the SWIR spectral range, a second imaging channel including a second detector configured to image the sample based on a second wavelength range including at least some wavelengths outside the SWIR spectral range, and a controller. The controller may receive first images of the sample from the first detector, receive second images of the sample from the second detector, and generate an optical metrology measurement of the sample based on the first and second images.

Abstract: A vacuum hold-down apparatus retains a wafer in a desired position and orientation. A vacuum chuck assembly of the vacuum hold-down apparatus has a vacuum chuck surface with a vacuum communication aperture. A venturi vacuum generator is fixed with respect to the vacuum chuck assembly and communicates with the vacuum chuck surface via the vacuum communication aperture. A positive pressure fluid line communicates with the venturi vacuum generator.

Abstract: Metrology methods and tools are provided, which enhance the accuracy of the measurements and enable simplification of the measurement process as well as improving the correspondence between the metrology targets and the semiconductor devices. Methods comprise illuminating the target in a Littrow configuration to yield a first measurement signal comprising a ?1st diffraction order and a 0th diffraction order and a second measurement signal comprising a +1st distraction order and a 0th diffraction order, wherein the ?1st diffraction order of the first measurement signal and the +1st diffraction order of the second measurement signal are diffracted at 180° to a direction of the illumination, performing a first measurement of the first measurement signal and a second measurement of the second measurement signal, and deriving metrology metric(s) therefrom. Optionally, a reflected 0th diffraction order may be split to yield components which interact with the ?1st and +1st diffraction orders.

Abstract: Vacuum hold-down apparatus suitable for retaining a wafer in a desired position and orientation, the apparatus including a vacuum chuck assembly defining a vacuum chuck surface having a vacuum communication aperture, a venturi vacuum generator fixed with respect to the vacuum chuck assembly and communicating with the vacuum chuck surface via the vacuum communication aperture and a positive pressure fluid line communicating with the venturi vacuum generator.

Abstract: A first x-y translation stage, a second x-y translation stage, and a chuck are disposed in a chamber. The chuck is situated above and coupled to the second x-y translation stage, which is situated above and coupled to the first x-y translation stage. The chuck is configured to support a substrate and to be translated by the first and second x-y stages in x- and y-directions, which are substantially parallel to a surface of the chuck on which the substrate is to be mounted. A first barrier and a second barrier are also disposed in the chamber. The first barrier is coupled to the first x-y translation stage to separate a first zone of the chamber from a second zone of the chamber. The second barrier is coupled to the second x-y translation stage to separate the first zone of the chamber from a third zone of the chamber.

Abstract: Metrology methods and tools are provided, which enhance the accuracy of the measurements and enable simplification of the measurement process as well as improving the correspondence between the metrology targets and the semiconductor devices. Methods comprise illuminating the target in a Littrow configuration to yield a first measurement signal comprising a ?1st diffraction order and a 0th diffraction order and a second measurement signal comprising a +1st distraction order and a 0th diffraction order, wherein the ?1st diffraction order of the first measurement signal and the +1st diffraction order of the second measurement signal are diffracted at 180° to a direction of the illumination, performing a first measurement of the first measurement signal and a second measurement of the second measurement signal, and deriving metrology metric(s) therefrom. Optionally, a reflected 0th diffraction order may be split to yield components which interact with the ?1st and +1st diffraction orders.