Abstract: Manual drive energy is input into a transport device of one embodiment by linearly reciprocating a first drive member that couples by way of a ratchet mechanism (or other mechanical motion rectifier means) and a mechanical motion amplifier means to one or more faster spinning flywheel masses. The one or more flywheel masses are formed in part by a combination electric motor/generator and it has rechargeable electric batteries distributively provided about a flywheel mass portion thereof. Tapered roller bearings having ferromagnetic material are interposed between the one or more flywheel masses and/or between one of the flywheels and a stationary frame of the transport device so as to repeatedly make and break closed magnetic flux conducting loops and thus provide at least one of an electric motoring and electricity generating function.

Abstract: Manual drive energy is input into a transport device of one embodiment by linearly reciprocating a first drive member that couples by way of a ratchet mechanism (or other mechanical motion rectifier means) and a mechanical motion amplifier means to one or more faster spinning flywheel masses. The one or more flywheel masses are formed in part by a combination electric motor/generator and it has rechargeable electric batteries distributively provided about a flywheel mass portion thereof. Tapered roller bearings having ferromagnetic material are interposed between the one or more flywheel masses and/or between one of the flywheels and a stationary frame of the transport device so as to repeatedly make and break closed magnetic flux conducting loops and thus provide at least one of an electric motoring and electricity generating function.

Abstract: A temperature stabilization system, method, composition of matter and substrate processing system are disclosed. A heat absorbing material is disposed in thermal contact with a substrate. The heat absorbing material is characterized by a solid-liquid phase transition temperature that is in a desired temperature range for material processing the substrate. When the substrate is subjected to material processing that results in heat transfer into or out of the substrate the solid-liquid phase transition of the heat absorbing material stabilizes the temperature of the substrate.

Abstract: An electrostatic chuck comprises a dielectric member comprising (i) a first layer comprising a semiconductive material, and (ii) a second layer over the first layer, the second layer comprising an insulative material. The insulative material has a higher electrical resistance than the semiconductive material. An electrode in the dielectric member is chargeable to generate an electrostatic force. The chuck is useful to hold substrates, such as semiconductor wafers, during their processing in plasma processes.

Abstract: An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.

Abstract: An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.

Abstract: An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises an electrode 110 at least partially covered by a semiconducting dielectric 115, wherein the semiconducting dielectric 115 may have an electrical resistance of from about 5×109 &OHgr;cm to about 8×1010 &OHgr;cm.

Abstract: A structure and method are present where a sidewall of a load lock chamber is formed by extrusion, to produce a reproducible tubular structure to form the walls of a vacuum chamber with greatly improved vacuum performance. The use of an extruded structure reduces the dimensional variability, increases the uniformity of a surface finish, and provides uniform top and bottom sealing arrangements, which allow full and easy access to the inside of the sidewalls for cleaning. In another arrangement heat transfer fluid passages can be formed in the wall of the chamber simultaneously as the wall of the chamber is extruded. Heating or cooling liquid can then be circulated through the passages in the wall of the chamber to heat the walls of the chamber as sometimes required to prevent condensation on the inside of the chamber walls, or provide cooling as is required for cool down of a wafer, after processing at an elevated temperature.

Abstract: A structure and method are present where a sidewall of a load lock chamber is formed by extrusion, to produce a reproducible tubular structure to form the walls of a vacuum chamber with greatly improved vacuum performance. The use of an extruded structure reduces the dimensional variability, increases the uniformity of a surface finish, and provides uniform top and bottom sealing arrangements, which allow full and easy access to the inside of the sidewalls for cleaning. In another arrangement heat transfer fluid passages can be formed in the wall of the chamber simultaneously as the wall of the chamber is extruded. Heating of cooling liquid can then be circulated through the passages in the wall of the chamber to heat the walls of the chamber as sometimes required to prevent condensation on the inside of the chamber walls, or provide cooling as is required for cool down of a wafer, after processing at an elevated temperature.

Abstract: An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises a dielectric covered electrode 110 having at least one heat transfer gas flow conduit 150 therein. An electrical isolator 200 comprising dielectric material is positioned in the gas flow conduit 150 to (i) electrically isolate the gas in the conduit from the plasma or electrode 110, and (ii) allow passage of heat transfer gas through the conduit. Preferably, the dielectric material comprises a plasma-deactivating material that has a high surface area that reduces plasma formation of gas passing through the conduit 150 in a plasma process. A semiconducting dielectric member 115 useful for rapidly charging and discharging electrostatic chucks is also described.

Abstract: A puncture resistant electrostatic chuck (20) is described. The chuck (20) comprises at least one electrode (25); and a composite insulator (30) covering the electrode. The composite insulator comprises a matrix material having a conformal holding surface (50) capable of conforming to the substrate (35) under application of an electrostatic force generated by the electrode to reduce leakage of heat transfer fluid held between the substrate and the holding surface. A hard puncture resistant layer, such a layer of fibers or an aromatic polyamide layer, is positioned below the holding surface (50) and is sufficiently hard to increase the puncture resistance of the composite insulator.

Abstract: The present invention discloses a surface structure and a method for preparation of the structure. The surface structure comprises a dielectric material in intimate contact with an underlying material having undercut formations therein which enhance the adhesion of the dielectric material to the surface of the underlying material. Preferred applications for the surface structure include semiconductor processing apparatus such as process chamber interior surfaces and the surfaces of functional elements used within the chamber. Functional elements include an electronic chuck used to hold a semiconductor substrate in place within the process chamber. The surface structure comprises at least one, and preferably a plurality of undercut formations which facilitate mechanical locking of a dielectric layer applied thereover. Preferably the undercut formation is at least one groove which traverses the surface to which the dielectric material is to be applied.

Abstract: The present invention discloses a two basic structures (including multiple variations within one of the basic structures) and methods for fabrication of the structures which facilitate the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck. The basic structures address both the problem of breakdown of a heat transfer gas in an RF plasma environment and the problem of arcing between a semiconductor substrate and the conductive pedestal portion of the electrostatic chuck in such an RF plasma environment.

Abstract: A piezoelectric gripping system firmly secures a semiconductor wafer or other workpiece onto a robotic transfer blade so as to allow for acceleration forces that exceed the frictional holding force between the blade and workpiece. To prevent production of contaminating particulates during grasping, the piezoelectric grippers of the system are independently actuated into slight contact with the workpiece so as to prevent frictional movement of the workpiece relative to the blade during the grasping operation. Once all of the grippers are in slight contact with the workpiece, the voltage to each gripper is increased by a predetermined amount to thereby uniformly increase the force exerted by each gripper on the workpiece and to thereby more firmly secure the workpiece to the blade. Thereafter, the blade may transfer the workpiece at extremely high speeds without the workpiece moving frictionally relative to the blade.

Abstract: A puncture resistant electrostatic chuck (20) is described. The chuck (20) comprises at least one electrode (25); and a composite insulator (30) covering the electrode. The composite insulator comprises a matrix material having a conformal holding surface (50) capable of conforming to the substrate (35) under application of an electrostatic force generated by the electrode to reduce leakage of heat transfer fluid held between the substrate and the holding surface. A hard puncture resistant layer, such a layer of fibers or an aromatic polyamide layer, is positioned below the holding surface (50) and is sufficiently hard to increase the puncture resistance of the composite insulator.

Abstract: The present invention discloses a two basic structures (including multiple variations within one of the basic structures) and methods for fabrication of the structures which facilitate the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck. The basic structures address both the problem of breakdown of a heat transfer gas in an RF plasma environment and the problem of arcing between a semiconductor substrate and the conductive pedestal portion of the electrostatic chuck in such an RF plasma environment.