Abstract: Various embodiments of the present disclosure provide a multi-layered framework for security of integrated circuits. In one example, an embodiment provides for removing one or more routing tables in a Register Transfer Level (RTL) source code that models a design for an SoC via a hardware description language, comprising replacing the one or more routing tables in the RTL source code with respective programmable memory, transforming a state space of one or more embedded state machines in the RTL source code, transforming one or more portions of combinational logic in the RTL source code, and/or removing one or more portions of security-critical logic in the RTL source code, comprising replacing the one or more portions of security-critical logic in the RTL source code with respective lookup tables.

Abstract: The present disclosure provides systems and methods for timed unlocking and locking of hardware intellectual properties obfuscation. One such method includes determining whether received key inputs match a functional key sequence of an integrated circuit or a test key sequence of the integrated circuit; permanently enabling operation of the integrated circuit responsive to the received key inputs being determined to be a functional key sequence for permanently enabling operation of the integrated circuit; temporarily enabling operation of the integrated circuit responsive to the received key inputs being determined to be the test key sequence for temporarily enabling operation of the integrated circuit to perform testing of the functionality and disable thereafter; and locking sequential logic and combinational logic of the integrated circuit if the received key inputs are determined to not be either the functional key sequence or the test key sequence. Other systems and methods are also provided.

Abstract: A method and system are directed to protecting hardware IP, particularly of ASIC designs. Programmability is introduced into an ASIC design to increase the difficulty of formulating ASIC designs as Boolean Satisfiability (SAT) problems. Fine-grain redaction of security-critical information from a design is employed by removing high-entropy logic blocks and subsequently inserting programmable components in place of the redacted portion to hide the actual design intent.

Abstract: The present disclosure describes various embodiments of systems, apparatuses, and methods of protecting an integrated circuit. One such method comprises operating the integrated circuit under a normal mode of operation; detecting, by a decommission controller, a triggering condition for a decommission operation to be initiated for the integrated circuit; initiating, by the decommission controller, a decommission mode for the integrated circuit after detection of the triggering condition; and causing, by the decommission controller, functionality of the integrated circuit to be irreversibly disabled after initiating the decommission mode. Other methods, systems, and apparatus are also presented.

Abstract: The present disclosure provides systems and methods for timed unlocking and locking of hardware intellectual properties obfuscation. One such method includes determining whether received key inputs match a functional key sequence of an integrated circuit or a test key sequence of the integrated circuit; permanently enabling operation of the integrated circuit responsive to the received key inputs being determined to be a functional key sequence for permanently enabling operation of the integrated circuit; temporarily enabling operation of the integrated circuit responsive to the received key inputs being determined to be the test key sequence for temporarily enabling operation of the integrated circuit to perform testing of the functionality and disable thereafter; and locking sequential logic and combinational logic of the integrated circuit if the received key inputs are determined to not be either the functional key sequence or the test key sequence. Other systems and methods are also provided.

Abstract: Semiconductor structures and methods of fabricating the same using multiple nanosecond pulsed laser anneals are provided. The method includes exposing a gate stack formed on a semiconducting material to multiple nanosecond laser pulses at a peak temperature below a melting point of the semiconducting material.

Abstract: Semiconductor structures and methods of fabricating the same using multiple nanosecond pulsed laser anneals are provided. The method includes exposing a gate stack formed on a semiconducting material to multiple nanosecond laser pulses at a peak temperature below a melting point of the semiconducting material.

Abstract: Semiconductor structures and methods of fabricating the same using multiple nanosecond pulsed laser anneals are provided. The method includes exposing a gate stack formed on a semiconducting material to multiple nanosecond laser pulses at a peak temperature below a melting point of the semiconducting material.

Abstract: The disclosure relates to semiconductor structures and, more particularly, to structures with thinned dielectric material and methods of manufacture. The method includes depositing a high-k dielectric on a substrate. The method further includes depositing a titanium nitride film directly on the high-k while simultaneously etching the high-k dielectric.

Abstract: Methods of forming a metal resistor are provided. The methods may include: depositing a metal layer, e.g., tungsten, on a substrate; and forming the metal resistor by implanting a semiconductor species, e.g., silicon and/or germanium, into the metal layer to form a semiconductor-metal alloy layer from at least a portion of the metal layer. In certain embodiments, an adhesion layer may be deposited by ALD prior to metal layer depositing. The metal resistor has a sheet resistance that remains substantially constant prior to and after subsequent annealing.

Abstract: Embodiments of the present invention provide a process that maintains a “keep cap” metal nitride layer on PFET devices within a CMOS structure. The keep cap metal nitride layer is in place while an N-type work function metal is formed on the NFET devices within the CMOS structure. A sacrificial rare earth oxide layer, such as a lanthanum oxide layer is used to facilitate removal of the n-type work function metal selective to the keep cap metal nitride layer.

Abstract: Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous.

Abstract: Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous.

Abstract: Semiconductor structures and methods of fabricating the same using multiple nanosecond pulsed laser anneals are provided. The method includes exposing a gate stack formed on a semiconducting material to multiple nanosecond laser pulses at a peak temperature below a melting point of the semiconducting material.

Abstract: A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.

Abstract: Semiconductor structures and methods of fabricating the same using multiple nanosecond pulsed laser anneals are provided. The method includes exposing a gate stack formed on a semiconducting material to multiple nanosecond laser pulses at a peak temperature below a melting point of the semiconducting material.

Abstract: A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.

Abstract: One aspect of the disclosure relates to a method of forming an integrated circuit structure. The method may include: forming a first work function metal over a set of fins having at least a first fin and a second fin; implanting the first work function metal with a first species; removing the implanted first work function metal from over the first fin such that a remaining portion of the implanted first work function metal remains over the second fin; forming a second work function metal over the set of fins including over the remaining portion of the implanted first work function metal; implanting the second work function metal with a second species; and forming a metal over the implanted second work function metal over the set of fins thereby forming the gate stack.

Abstract: One aspect of the disclosure relates to a method of forming an integrated circuit structure. The method may include: forming a first work function metal over a set of fins having at least a first fin and a second fin; implanting the first work function metal with a first species; removing the implanted first work function metal from over the first fin such that a remaining portion of the implanted first work function metal remains over the second fin; forming a second work function metal over the set of fins including over the remaining portion of the implanted first work function metal; implanting the second work function metal with a second species; and forming a metal over the implanted second work function metal over the set of fins thereby forming the gate stack.

Abstract: The disclosure relates to semiconductor structures and, more particularly, to structures with thinned dielectric material and methods of manufacture. The method includes depositing a high-k dielectric on a substrate. The method further includes depositing a titanium nitride film directly on the high-k while simultaneously etching the high-k dielectric.