Abstract: There is provided a method and apparatus for forming a layer, by sequentially repeating a layer deposition cycle to process a substrate disposed in a reaction chamber. The deposition cycle comprising: supplying a first precursor into the reaction chamber for a first pulse period; supplying a second precursor into the reaction chamber for a second pulse period. At least one of the first and second precursors may be supplied into the reaction chamber for a pretreatment period longer than the first or second pulse period before sequentially repeating the deposition cycles.

Abstract: A method for forming a silicon-comprising layer on a substrate may comprise providing the substrate to a process chamber, the process chamber being comprised in a low pressure chemical vapor deposition (LPCVD) furnace. A repetitive deposition cycle is performed. The deposition cycle comprises a first deposition pulse and a second deposition pulse comprising a provision, into the process chamber, of a first precursor and a second precursor, respectively. The deposition cycle further comprises a first purge pulse and a second purge pulse for removing, from the process chamber, a portion of the first precursor and a portion of the second precursor, respectively. The process chamber is maintained, during the deposition cycle, at a process temperature in a range from about 400° C. to about 650° C. and at a first pressure being different from a second pressure, during the first deposition pulse and during the second deposition pulse, respectively.

Abstract: A chemical vapor deposition furnace for depositing silicon nitride films, is discloses. The furnace comprising a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector is provided inside the process chamber extending in a substantially vertical direction over substantially a wafer boat height and comprising a feed end connected to a source of a silicon precursor and a source of a nitrogen precursor and a plurality of vertically spaced gas injection holes to provide gas from the feed end to the process chamber. The furnace may comprise a purge gas injection system to provide a purge gas into the process chamber near a lower end of the process chamber.

Abstract: A substrate processing apparatus with a reaction chamber and a substrate holder constructed and arranged to hold at least one substrate in said reaction chamber is provided. A first and second gas injector provides a process gas to the interior of the reaction chamber from a source pipe. A gas control system provides a flow of process gas from the source pipe to the first injector while restricting a flow of the same process gas from the source pipe to the second injector.

Abstract: There is provided a method and apparatus for forming a layer, by sequentially repeating a layer deposition cycle to process a substrate disposed in a reaction chamber. The deposition cycle comprising: supplying a first precursor into the reaction chamber for a first pulse period; supplying a second precursor into the reaction chamber for a second pulse period. At least one of the first and second precursors may be supplied into the reaction chamber for a pretreatment period longer than the first or second pulse period before sequentially repeating the deposition cycles.

Abstract: A wafer boat for accommodating semiconductor wafers comprises two side rods and at least one back rod, the rods being vertically oriented and extending between a top member and a bottom member. The rods comprise vertically spaced recesses formed at corresponding heights, recesses at the same height defining a wafer accommodation for receiving and supporting a wafer in a substantially horizontal orientation, the recesses having an improved shape. The upwardly facing surfaces of the recesses comprise a first flat surface in an inward region of the recess which is horizontal or inclined upward in an outward direction of the recess and a second flat surface in an outer region of the recess which is inclined downward in an outward direction of the recess. The intersection of the first and second surface forming an edge for supporting the wafer. The recesses are easy to machine and prevent damage to the wafer.

Abstract: A wafer boat for accommodating semiconductor wafers comprises two side rods and at least one back rod, the rods being vertically oriented and extending between a top member and a bottom member. The rods comprise vertically spaced recesses formed at corresponding heights, recesses at the same height defining a wafer accommodation for receiving and supporting a wafer in a substantially horizontal orientation, the recesses having an improved shape. The upwardly facing surfaces of the recesses comprise a first flat surface in an inward region of the recess which is horizontal or inclined upward in an outward direction of the recess and a second flat surface in an outer region of the recess which is inclined downward in an outward direction of the recess. The intersection of the first and second surface forming an edge for supporting the wafer. The recesses are easy to machine and prevent damage to the wafer.