Abstract: A template for seeding growth of a desired single-crystal material (e.g., Si, GaAs) is created by passing through a monocrystalline channelizing mask, in a channelizing direction thereof, at least one of a nucleation-friendly species (e.g., Si, Ga) and a knock-off species (e.g., Ar, F) for respective implant of a nucleation-friendly species within or removal of a nucleation-unfriendly material (e.g., SiO.sub.2) of a supplied substrate. The desired single-crystal material is then grown in epitaxial-like manner from the thus-formed seeding-template. In one embodiment, silicon ions are projected through a monocrystalline silicon mask of a selected crystal orientation ((100), or (111)) in its channelizing direction so as to implant the silicon ions in a silicon dioxide layer of a supplied substrate according to the selected crystal orientation of the channelizing mask. Monocrystalline silicon is then epitaxially grown on top of the silicon dioxide layer with the same crystal orientation.

Abstract: An apparatus and method for chemical vapor deposition in which the reactants directed toward a substrate to be provided with one or more films are first subjected to an electric field. The electric field is applied between two electrodes and the reactants become polarized in the field, thus stretching their polarized chemical bonds close to the breaking point. The apparatus also applies voltage pulses between one of the electrodes and the substrate. By adjusting the pulse height, pulse width and pulse repetition rates, the chemical bonds of polarized reactants break to produce free radicals and some ions of the desired elements or compounds. The substrate is kept at a given temperature. The free radicals react to deposit the desired film of high purity on the substrate. The deposition characteristics of the deposited films in terms of isotropic, anisotropic and selective deposition are controlled by the pulse height, width, repetition rates and by other process parameters.

Abstract: An apparatus and method for chemical vapor deposition in which the reactants directed toward a substrate to be provided with one or more films are first subjected to an electric field. The electric field is applied between two electrodes and the reactants become polarized in the field, thus stretching their polarized chemical bonds close to the breaking point. The apparatus also applies voltage pulses between one of the electrodes and the substrate. By adjusting the pulse height, pulse width and pulse repetition rates, the chemical bonds of polarized reactants break to produce free radicals and some ions of the desired elements or compounds. The substrate is kept at a given temperature. The free radicals react to deposit the desired film of high purity on the substrate. The deposition characteristics of the deposited films in terms of isotropic, anisotropic and selective deposition are controlled by the pulse height, width, repetition rates and by other process parameters.

Abstract: A multilevel metallization process which allows fabrication of several types of high density MOS and bipolar integrated circuits. The process uses a pad located under the inter-layer contact opening. The material of the pad is poly-silicon (doped or undoped), a refractory metal, or a refractory metal silicide which is not capable of being attacked during chemical etching of the metallization layers. If poly-silicon is used, it is either doped during its deposition or during contact doping, or it is automatically silicided during ohmic and Schottky contact formations.

Abstract: A system for recording audio signals generated from a plurality of locations in which the signals from such locations can be selectively recorded or not recorded depending upon the audio effect to be reproduced. One embodiment of the system includes three acoustically isolated rooms with the interiors of the rooms being visually observable, directly or via television, from any of the other rooms. In one room, one or more performers can be positioned, in a second room a plurality of performers can be located, and in the third room recording equipment can be placed. The recording equipment comprises a plurality of recording devices with each device having a recording medium, such as a disk or magnetic tape. The medium of each recording device can have one or more recording channels with each channel being provided with a recording head.

Abstract: An improved method of fabricating metal-semiconductor interfaces such as Schottky barriers and ohmic contacts. There is disclosed apparatus and method (or process) for chemically converting, etching, or passivating the surface of a material, such as the surface of a silicon wafer, in a gaseous plasma environment consisting of atomic, neutral nitrogen which causes the surface of the material to be resistant to otherwise subsequent nascent surface oxide buildup. This process is particularly useful in manufacture of Schottky diodes, transistors, and other electronic components or discrete and integrated devices requiring high quality metal-semiconductor junctions or interfaces.

Abstract: An improved plasma etching process. There is disclosed apparatus and method (or process) for etching patterns in metal films deposited on a semiconductor wafer. This improved process is particularly useful in the fabrication of certain semiconductor devices, such as MOS and bipolar integrated circuits and Schottky transistors (semiconductor/metal interfaces) which employ contact "fingers". The fingers are constructed from layers of metal, such as aluminum, tungsten, and titanium with aluminum being the outermost layer.

Abstract: An improved method of fabricating metal-semiconductor interfaces such as Schottky barriers and ohmic contacts. There is disclosed apparatus and method (or process) for chemically converting, etching, or passivating the surface of a material, such as the surface of a silicon wafer, in a gaseous plasma environment consisting of atomic, neutral nitrogen which causes the surface of the material to be resistant to otherwise subsequent nascent surface oxide buildup. This process is particularly useful in manufacture of Schottky diodes, transistors, and other electronic components or discrete and integrated devices requiring high quality metal-semiconductor junctions or interfaces.