Abstract: A frequency selective coupler configured as a harmonic rejection filter includes an electromagnetic element configured to electromagnetically couple to a signal path between an output of a power amplifier and an antenna, an impedance network coupled between an isolated port of the coupler and ground, the impedance network configured to provide a harmonic filter response, and an electrically unconnected coupled port connected to the electromagnetic element.

Abstract: A frequency selective coupler configured as a harmonic rejection filter includes an electromagnetic element configured to electromagnetically couple to a signal path between an output of a power amplifier and an antenna, an impedance network coupled between an isolated port of the coupler and ground, the impedance network configured to provide a harmonic filter response, and an electrically unconnected coupled port connected to the electromagnetic element.

Abstract: Tunable, broadband directional coupler circuits employing one or more additional, switchable coupling circuits for controlling frequency response, and related methods. In exemplary aspects, the directional coupler includes one or more additional coupling circuits that each include an additional coupling line located adjacent to the primary coupling line and that can be selectively activated to change a frequency response of the directional coupler. When an additional coupling circuit is activated, its additional coupling line has the effect of extending the length of the primary coupling line through mutual inductance, thus changing the coupling frequency response of the directional coupler. The additional coupling circuit includes one or more switch(es) to allow for the selective coupling of its additional coupling line to the coupling and/or isolation ports of the directional coupler to selectively change and control the frequency response of the primary coupling line.

Abstract: Tunable, broadband directional coupler circuits employing one or more additional, switchable coupling circuits for controlling frequency response, and related methods. In exemplary aspects, the directional coupler includes one or more additional coupling circuits that each include an additional coupling line located adjacent to the primary coupling line and that can be selectively activated to change a frequency response of the directional coupler. When an additional coupling circuit is activated, its additional coupling line has the effect of extending the length of the primary coupling line through mutual inductance, thus changing the coupling frequency response of the directional coupler. The additional coupling circuit includes one or more switch(es) to allow for the selective coupling of its additional coupling line to the coupling and/or isolation ports of the directional coupler to selectively change and control the frequency response of the primary coupling line.

Abstract: Some aspects pertain to an apparatus that includes a plurality of stacked metal layers configured in a spiral shape. The plurality of stacked metal layers include a first metal layer including a first inductor, a second metal layer including a plurality of first pads and a plurality of second pads, a third metal layer including a plurality of third pads and a plurality of fourth pads, a fourth metal layer including a second inductor, a plurality of first vias configured to couple the first metal layer to the second metal layer, a plurality of second vias configured to couple the second metal layer to the third metal layer, a plurality of third vias configured to couple the third metal layer to the fourth metal layer; and a dielectric layer at least partially surrounding the apparatus.

Abstract: Some aspects pertain to an apparatus that includes a plurality of stacked metal layers configured in a spiral shape. The plurality of stacked metal layers include a first metal layer including a first inductor, a second metal layer including a plurality of first pads and a plurality of second pads, a third metal layer including a plurality of third pads and a plurality of fourth pads, a fourth metal layer including a second inductor, a plurality of first vias configured to couple the first metal layer to the second metal layer, a plurality of second vias configured to couple the second metal layer to the third metal layer, a plurality of third vias configured to couple the third metal layer to the fourth metal layer; and a dielectric layer at least partially surrounding the apparatus.

Abstract: Embodiments provide a switching device including one or more field-effect transistors (FETs). In embodiments, a negative bias circuit is configured to generate a negative voltage signal based on a radio frequency (RF) signal applied to the circuit. When the FET is in an off state, the negative voltage signal is provided to a gate terminal of the FET.

Abstract: Embodiments provide a switching device including a field-effect transistor (FET) having a source terminal, a drain terminal, a gate terminal, and a body terminal. The FET may be switchable between an on state, in which the FET passes a transmission signal between the source terminal and the drain terminal, and an off state, in which the FET prevents a transmission signal from passing between the source terminal and the drain terminal. The FET may receive a control signal at the gate terminal to switch the FET between the on state and the off state. The switching device may further include one or more forward diodes coupled between the gate terminal and the body terminal to bias the body terminal during the on state, and one or more reverse diodes coupled between the gate terminal and the body terminal to bias the body terminal during the off state.