Abstract: Provided herein is a ECSP computer device for facilitating senior user engagement. The processor is programmed to: (i) store user registration information for a senior user associated with the first client device; (ii) store caregiver registration information for a plurality of caregivers associated with the senior user, wherein the caregiver registration information includes data for identifying the at least one second client device; (iii) receive, from at least one of the senior user and the plurality of caregivers, one or more items of an order of the senior user; (iv) compile the received items into a list; (v) generate the order based on user preferences and the list; (vi) determine at least one third party to fulfill the order based on the items on the list and the user preferences; and (vii) transmit the order to a third party server associated with the determined third party.

Abstract: A method for producing a pattern of regularly spaced-apart nucleation sites and corresponding devices are disclosed. The method enables formation of a device having an amorphous or otherwise non-single crystal surface from which single crystal layers of a desired orientation may be grown using the regularly spaced nucleation sites as a growth template. The method can be used to produce a single crystal semiconductor layer of a desired orientation (e.g., <100> or <111>) on an amorphous insulating layer (e.g. of SiO.sub.2 or Si.sub.3 N.sub.4). For example, single crystal Si of a <100> orientation may be grown on an SiO.sub.2 layer. Monocrystalline semiconductor films may be similarly grown on amorphous glass substrates or the like for producing solar cells of high efficiency and low cost.

Abstract: A method and apparatus for producing a pattern of nucleation sites is disclosed. The method enables the growth of single crystal layers of a desired orientation on a suitable amorphous and/or non-single crystal surface. The method can be used to produce single crystal Si layers of a desired orientation on an amorphous layer, e.g. of SiO.sub.2 or Si.sub.3 N.sub.4. The method can provide for growth of (100) crystal orientation on SiO.sub.2. Semiconductor films may be accordingly grown on amorphous glass substrates for producing solar cells of high efficiency. A pattern of nucleation sites is created in amorphous layers, e.g. SiO.sub.2 on an IC wafer, by high-dose implantation through a single crystal mask having appropriate channeling directions at the desired lattice constants. Such implantation may be performed in a conventional ion implanter. Subsequent to creation of spaced-apart nucleation sites, epitaxial Si may be grown on such an SiO.sub.2 surface by CVD of Si.