Patents by Inventor Arlene G. Williams

Arlene G. Williams has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4849377
    Abstract: Molybdenum gate electrode material is provided with an upper layer of molybdenum nitride which acts to prevent deposition of source and drain contact metal by selective chemical vapor deposition (CVD). The nitride layer also provides an improved mask for ion implantation process steps. This results in an FET structure exhibiting a high degree of planarity which is desirable for multilevel device fabrication.
    Type: Grant
    Filed: May 27, 1986
    Date of Patent: July 18, 1989
    Assignee: General Electric Company
    Inventors: Manjin J. Kim, Bruce F. Griffing, Ronald H. Wilson, Arlene G. Williams, Robert W. Stoll
  • Patent number: 4554186
    Abstract: A method is provided for applying an aluminosilicate coating onto a substrate. For example, a superalloy is treated with an organic solvent solution of an aluminosiloxane having an Al/Si ratio having a value of 1 to 5 inclusive which is heated to an elevated temperature.
    Type: Grant
    Filed: April 4, 1985
    Date of Patent: November 19, 1985
    Assignee: General Electric Company
    Inventor: Arlene G. Williams
  • Patent number: 4528038
    Abstract: A method is provided for applying an aluminosilicate coating onto a substrate. For example, a superalloy is treated with an organic solvent solution of an aluminosiloxane having an Al/Si ratio having a value of 1 to 5 inclusive which is heated to an elevated temperature.
    Type: Grant
    Filed: June 28, 1984
    Date of Patent: July 9, 1985
    Assignee: General Electric Company
    Inventor: Arlene G. Williams