Patents by Inventor Armand A. Galan

Armand A. Galan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Spin torque MRAM fabrication using negative tone lithography and ion beam etching
    Patent number: 10388857
    Abstract: A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.
    Type: Grant
    Filed: June 16, 2016
    Date of Patent: August 20, 2019
    Assignee: International Business Machines Corporation
    Inventors: Anthony J. Annunziata, Armand A. Galan, Steve Holmes, Eric A. Joseph, Gen P. Lauer, Qinghuang Lin, Nathan P. Marchack
  • Spin torque MRAM fabrication using negative tone lithography and ion beam etching
    Patent number: 10170698
    Abstract: A method of forming a pillar includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A layer under the island of photoresist material is etched to establish a pillar defined by the island of photoresist material.
    Type: Grant
    Filed: May 9, 2017
    Date of Patent: January 1, 2019
    Inventors: Anthony J. Annunziata, Armand A. Galan, Steve Holmes, Eric A. Joseph, Gen P. Lauer, Qinghuang Lin, Nathan P. Marchack
  • SPIN TORQUE MRAM FABRICATION USING NEGATIVE TONE LITHOGRAPHY AND ION BEAM ETCHING
    Publication number: 20170244024
    Abstract: A method of forming a pillar includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A layer under the island of photoresist material is etched to establish a pillar defined by the island of photoresist material.
    Type: Application
    Filed: May 9, 2017
    Publication date: August 24, 2017
    Inventors: Anthony J. Annunziata, Armand A. Galan, Steve Holmes, Eric A. Joseph, Gen P. Lauer, Qinghuang Lin, Nathan P. Marchack
  • Spin torque MRAM fabrication using negative tone lithography and ion beam etching
    Patent number: 9705077
    Abstract: A method for forming a memory device includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A planarizing layer is etched to establish a pillar of planarizing material defined by the island of photoresist material. A metal layer is etched to form a metal pillar having a diameter about the same as the pillar of planarizing material. A memory stack is etched to form a memory stack pillar having a diameter about the same as the metal pillar. A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.
    Type: Grant
    Filed: August 31, 2015
    Date of Patent: July 11, 2017
    Assignee: International Business Machines Corporation
    Inventors: Anthony J. Annunziata, Armand A. Galan, Steve Holmes, Eric A. Joseph, Gen P. Lauer, Qinghuang Lin, Nathan P. Marchack
  • SPIN TORQUE MRAM FABRICATION USING NEGATIVE TONE LITHOGRAPHY AND ION BEAM ETCHING
    Publication number: 20170062707
    Abstract: A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.
    Type: Application
    Filed: June 16, 2016
    Publication date: March 2, 2017
    Inventors: Anthony J. Annunziata, Armand A. Galan, Steve Holmes, Eric A. Joseph, Gen P. Lauer, Qinghuang Lin, Nathan P. Marchack
  • SPIN TORQUE MRAM FABRICATION USING NEGATIVE TONE LITHOGRAPHY AND ION BEAM ETCHING
    Publication number: 20170062708
    Abstract: A method for forming a memory device includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A planarizing layer is etched to establish a pillar of planarizing material defined by the island of photoresist material. A metal layer is etched to form a metal pillar having a diameter about the same as the pillar of planarizing material. A memory stack is etched to form a memory stack pillar having a diameter about the same as the metal pillar. A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.
    Type: Application
    Filed: August 31, 2015
    Publication date: March 2, 2017
    Inventors: Anthony J. Annunziata, Armand A. Galan, Steve Holmes, Eric A. Joseph, Gen P. Lauer, Qinghuang Lin, Nathan P. Marchack