Abstract: The present invention relates to a compacting process suitable particularly for the compacting of materials with a pyrophoric tendency and especially for the compacting of scrap metal generated in the nuclear industry: and compacting means (4), and a compacting device including said means (4), appropriate for the implementation of said process. In said process the blanketed materials are compacted with optimized complementary external blanketing. The inert gas used for said external blanketing is characteristically conveyed via the compacting means (4) and blown in through their lower end (15).

Abstract: The invention relates to a logic MOS gate of the domino type, having a precharging transistor, a validation transistor and logic transistors. To prevent unwanted discharging of a precharged high level, which may be induced by at least one input data being stabilized too slowly, that is to say not before a clock signal has risen to the high level, a p-MOS sub-network is arranged in parallel with the source-drain path of the precharging transistor and receives at least the input data which was too slowly stabilized in such a manner as to establish a conductor path which reestablishes the precharged high level.