Abstract: This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-systems for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables.

Abstract: An improved wafer handling system including a pair of robot arms each having a drive apparatus operatively coupled to its rear end portion for extending, retracting, and rotatably positioning the robot arms. The opposite end of the robot arms are operatively connected to a pick-up wand. The pick-up wand includes a top plate and a bottom plate. The lower surface of the top plate has a plurality of commonly-connected grooves ground therein and a reservoir for supplying gas to said grooves from the forward end portion of the robot arms. A plurality of gas outlets are provided in the bottom plate, and the bottom surface of the top plate is positioned securely over and flush against the top surface of the bottom plate such that at least one of the grooves are over each of the plurality of gas outlets for delivering gas thereto.

Abstract: A method for loading a substrate into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber, permits purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber to off load the substrates. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.

Abstract: Each substrate is loaded into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber to permit purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber wherefrom the substrates are off loaded. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.

Abstract: Wafer handling apparatus operating under the Bernoulli principle to pick up, transport and deposit wafers, which apparatus includes a plate having a plurality of laterally oriented outlets and a central outlet for discharging gas in a pattern sufficient to develop a low pressure enviroment to pick up the wafer while bathing the wafer in radially outflowing gases to prevent intrusion and deposition on the wafer of particulate matter in suspension.

Abstract: A substrate loading subsystem receives substrates from an external source and delivers them to an input port. A substrate pickup transports the substrates serially from the input port to a delivery port of a processing subsystem wherein the substrates are subjected to a reactant gas in a reaction chamber. After completion of the chemical vapor deposition, the substrate pick up serially transports the substrates to an outlet port wherefrom they are off loaded.

Abstract: This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-system for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables.

Abstract: A thyristor is provided having high gate sensitivity in combination with high dv/dt ratings. An amplifying gate structure is utilized having a pilot thyristor region including a first portion characterized by a first extent and at least one projection of said first portion extending therefrom and having a lateral extent greater than the extent of said first portion; and means substantially isolating said pilot thyristor region from the remainder of the device which means surround said first portion and the sides of said projection.

Abstract: The invention is a package for radiation triggered semiconductor devices and a method for directing radiation to the radiation receiving region of a semiconductor device mounted in such a package. The package is of the type which has a side wall formed of an electrically insulating material surrounding a central cavity, and top and bottom walls formed of conductive material. The package is hermetically sealable and constructed to withstand externally applied compression. The means and method for radiation triggering of a semiconductor device in the package include optical conduit means extending through and hermetically sealed to the insulating side wall of the enclosure. Radiation is caused to enter the package along a first optical path in said optical conduit means. A prism or other similar means in the cavity redirects the radiation from the first optical path toward a predetermined region in the cavity to trigger a radiation triggered semiconductor device mounted in the package.

Abstract: Efficient starting of solenoidal electric field discharge lamps is effected when a primary voltage exceeds a critical transition level. A starting potential may be applied to electrodes on the external surface of the lamp which are capacitatively coupled to a fill gas. Alternately, the electrodes may be disposed within the lamp envelope. Optimally, the starting electrodes are disposed along the axis of an annular transformer core at opposite ends of a tunnel region.

Abstract: Efficient starting of solenoidal electric field discharge lamps is effected with a start winding disposed on the same core with the ballast reactance. This placement of the start winding possesses certain advantages over other methods of lamp starting, and in particular it facilitates hot restart of the lamp.

Abstract: Solenoidal electric field lamps are effectively dimmed with no loss in lamp efficiency by powering the lamps with high frequency current pulses and periodically interrupting the current pulses in a time ratio fashion in order to reduce the average power being supplied to the lamp. The lamp may be dimmed from 100 to 0 percent of full power in an efficient manner as long as the pulse interruption period is less than the plasma deionization time of the lamp.

Abstract: The evaporating area of a heat pipe or thermosiphon evaporator is used as the thermal sink for one face of an electrically isolated substrate upon the opposite face of which are mounted and interconnected one or more power semiconductors and other components requiring cooling. Both sides of semiconductor devices mounted on the isolating substrate may be cooled while allowing each of a plurality of different combinations of electrical devices and/or interconnections to be achieved.

Abstract: The voltage drop in induction ionized lamps is reduced by utilization of annular magnetic cores of inwardly convex cross section. Core power dissipation may be minimized by use of cores having a circular cross section. Lamp voltage drop may further be reduced by eccentrically positioning the core within a substantially globular lamp enevelope.

Abstract: Zener diodes of selectively variable breakdown voltages ranging from a few voltages to several hundred volts are fabricated in monolithic integrated circuits by locating the edge of a P-N junction at the surface of a substrate within the gradient region of P-type diffusion. Methods for making the same are also described.

Abstract: The distribution of turns in the primary winding of an induction ionized discharge lamp varies as a function of angular position on a toroidal core. The turns are wound in proportion to the adjoining secondary plasma flux density. Local matching of flux linkages per ampere reduces leakage flux between the primary and secondary and thereby improves lamp coupling and reduces electromagnetic interference.

Abstract: A light triggered thyristor is provided including an electrode surrounding a gate area which is sensitive to radiation impinging thereon to turn on the device. Trimable resistor means are connected between said electrode and the cathode of the device to allow adjustment of the turn-on time of the device to compensate for processing tolerances during the manufacture of the device.

Abstract: A triple diffused interdigitated NPN transistor formed in an isolated N-epitaxial pocket of an otherwise standard NPN bipolar junction isolated integrated circuit. The N-type diffused collector pocket in the N-epitaxial layer lowers collector resistance of the triple diffused NPN device.

Abstract: An electric field controlled semiconductor diode comprises a semiconductor substrate with a uniform anode injecting region formed in one major surface of the substrate and a current controlling surface grid formed in the other major surface. The interstices of the grid include a cathode region of high injection efficiency. Means for controlling flow of electrical current between the anode and cathode regions is also described.

Abstract: No-load losses normally associated with transformer-isolated inverter circuits employing high frequency switching devices are substantially eliminated by electrically short-circuiting the load terminals of the inverter to quickly and efficiently shut down inverter operation and thereby reduce the no-load losses to at least the fall-back current losses of the inverter.