Abstract: A method of making mesoporous silicon from silica, the mesoporous silicon obtained by the method, and uses of the mesoporous silicon are described. The mesoporous silicon may be derived from plants, particularly land-based plants.

Abstract: A method of making porous silicon using a chemical etchant comprising metal ions is described.

Abstract: A consumer care composition or a food composition comprising a mesoporous microparticulate material wherein at least some of the pores of the material are loaded with at least one ingredient and the loaded mesoporous microparticulate material is encapsulated by a capping layer is described.

Abstract: A method of making mesoporous silicon from silica, the mesoporous silicon obtained by the method, and uses of the mesoporous silicon are described. The mesoporous silicon may be derived from plants, particularly land-based plants.

Abstract: A method of making porous silicon using a chemical etchant comprising metal ions is described.

Abstract: A method for masking the appearance of silicon in a range of compositions is described.

Abstract: A consumer care composition or a food composition comprising a mesoporous microparticulate material wherein at least some of the pores of the material are loaded with at least one ingredient and the loaded mesoporous microparticulate material is encapsulated by a capping layer is described.

Abstract: An optical element (3) is mechanically retained within a slot of (2) in a rigid substrate (1), e.g. of a ceramic or crystalline material, by contact with the sides of the slot. Where the difference between a dimension of the optical element and the slot width at ambient temperature is a very small and positive, it may be removed by heating the substrate and/or cooling the element (differential thermal expansion) to allow insertion of the element. Then the temperature difference is removed so that the element is mechanically retained under compression by the slot sides. Alternatively, where the element may be directly inserted so that it is in contact with or immediately adjacent the slot wall, the material of the substrate and/or the optical element is the oxidized in the region of contact so as to increase the dimension of the oxidized material and mechanically retain the element.

Abstract: An electroluminescent device comprises a porous silicon region adjacent a bulk silicon region, together with a top electrical contact of transparent indium tin oxide and a bottom electrical contact of aluminium. The device includes a heavily doped region to provide an ohmic contact. The porous silicon region is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device has a rectifying p-n junction within the porous silicon region.

Abstract: An electroluminescent device (10) comprises a porous silicon region (22) adjacent a bulk silicon region (20), together with a top electrical contact (24) of transparent indium tin oxide and a bottom electrical contact (26) of aluminium. The device includes a heavily doped region (28) to provide an ohmic contact. The porous silicon region (22) is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device (10) has a rectifying p-n junction within the porous silicon region (22).

Abstract: An apparatus for facilitating the alignment of an optical fiber to an integrated waveguide component comprising a substrate having an integral waveguide comprises a mask arranged to be disposed between the optical fiber and the integrated waveguide component, wherein the mask includes an aperture extending therethrough. In use, the aperture is substantially exactly aligned with the waveguide thereby to permit light from the optical fiber to be transmitted to the waveguide but to substantially prevent light from the optical fiber from passing around the waveguide and/or through the substrate.

Abstract: An optical element (3) is mechanically retained within a slot of (2) in a rigid substrate (1), e.g. of a ceramic or crystalline material, by contact with the sides of the slot. Where the difference between a dimension of the optical element and the slot width at ambient temperature is a very small and positive, it may be removed by heating the substrate and/or cooling the element (differential thermal expansion) to allow insertion of the element. Then the temperature difference is removed so that the element is mechanically retained under compression by the slot sides. Alternatively, where the element may be directly inserted so that it is in contact with or immediately adjacent the slot wall, the material of the substrate and/or the optical element is the oxidized in the region of contact so as to increase the dimension of the oxidized material and mechanically retain the element.

Abstract: An apparatus for facilitating the alignment of an optical fibre to an integrated waveguide component comprising a substrate having an integral waveguide comprises a mask arranged to be disposed between the optical fibre and the integrated waveguide component, wherein the mask includes an aperture extending therethrough. In use, the aperture is substantially exactly aligned with the waveguide thereby to permit light from the optical fibre to be transmitted to the waveguide but to substantially prevent light from the optical fibre from passing around the waveguide and/or through the substrate.

Abstract: An electroluminescent device (10) comprises a porous silicon region (22) adjacent a bulk silicon region (20), together with a top electrical contact (24) of transparent indium tin oxide and a bottom electrical contact (26) of aluminum. The device includes a heavily doped region (28) to provide an ohmic contact. The porous silicon region (22) is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device (10) has a rectifying p-n junction within the porous silicon region (22).

Abstract: An electroluminescent device (10) comprises a porous silicon region (22) adjacent a bulk silicon region (20), together with a top electrical contact (24) of transparent indium tin oxide and a bottom electrical contact (26) of aluminum. The device includes a heavily doped region (28) to provide an ohmic contact. The porous silicon region (22) is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device (10) has a rectifying p-n junction within the porous silicon region (22).